NP3100SDMCT3G

NP-SDMC Series High Current TSPD The NP−SDMC series of High Current Thyristor Surge Protection Devices (TSPD) protect sensitive electronic equipment from transient overvoltage conditions. The high current withstand of these devices offer protection in extreme environments and provide a solution for GR−1089 balanced “Y” configurations. The NP−SDMC Series helps designers to comply with the various regulatory standards and recommendations including: GR−1089−CORE, IEC 61000−4−5, ITU K.20/K.21/K.45, IEC 60950, TIA−968−A, FCC Part 68, EN 60950, UL 1950. Features • • • • http://onsemi.com HIGH CURRENT (200A) BIDIRECTIONAL SURFACE MOUNT THYRISTOR Low Leakage (Transparent) High Surge Current Capabilities Precise Turn on Voltages These are Pb−Free Devices T R Typical Applications • Central Office • Rugged Modems • Bottom Element in “Y” Configurations SMB JEDEC DO−214AA CASE 403C ELECTRICAL CHARACTERISTICS VDRM V(BO) CO, 2 V, 1 MHz CO, 50 V, 1 MHz MARKING DIAGRAM V V pF (Max) pF (Max) NP0720SDMCT3G 65 88 65 30 NP1300SDMCT3G 120 160 65 30 AYWW xxxDMG G NP1500SDMCT3G 140 180 65 30 NP1800SDMCT3G 170 220 65 30 NP3100SDMCT3G 275 350 65 30 Device G in part number indicates RoHS compliance Other protection voltages are available upon request Symmetrical Protection − Values the same in both negative and positive excursions (See V−I Curve on page 3) A Y WW xxx = Assembly Location = Year = Work Week = Specific Device Code (NPxxx0SDMC) G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NPxxxxSDMCT3G SMB (Pb−Free) 2500 Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 August, 2009 − Rev. 0 1 Publication Order Number: NP3100SD/D NP−SDMC Series MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Symbol VDRM IPPS ITSM Rating Value Unit NP0720SDMCT3G $65 V NP1300SDMCT3G $120 NP1500SDMCT3G $140 NP1800SDMCT3G $170 NP3100SDMCT3G $275 Nonrepetitive peak pulse current: Rated maximum value of peak impulse pulse current that may be applied. 2x10 ms, GR−1089−CORE 1000 10x1000 ms, GR−1089−CORE 200 Non−repetitive peak on−state current: Rated maximum (peak) value of ac power frequency on−state surge current which may be applied for a specified time or number of ac cycles. 0.0167s, 50/60 Hz, full sine wave 60 Repetitive peak off−state voltage: Rated maximum (peak) continuous voltage that may be applied in the off−state conditions including all dc and repetitive alternating voltage components. 0.1s, 50/60 Hz, full sine wave 30 1000s, 50/60 Hz, full sine wave 2.2 A A Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS TABLE (TA = 25°C unless otherwise noted) Symbol V(BO) I(BO) IH IDRM VT Rating Min Breakover voltage: The maximum voltage across the device in or at the breakdown region. VDC = 1000 V, dv/dt = 100 V/ms Typ Max Unit NP0720SDMCT3G $88 V NP1300SDMCT3G $160 NP1500SDMCT3G $180 NP1800SDMCT3G $220 NP3100SDMCT3G $350 Breakover Current: The instantaneous current flowing at the breakover voltage. Holding Current: The minimum current required to maintain the device in the on−state. Off−state Current: The dc value of current that results from the application of the off−state voltage 800 150 mA VD = 50 V 2 VD = VDRM 5 On−state Voltage: The voltage across the device in the on−state condition. IT = 2.2 A (pk), PW = 300 ms, DC = 2% dv/dt Critical rate of rise of off−state voltage: The maximum rate of rise of voltage (below VDRM) that will not cause switching from the off−state to the on−state. Linear Ramp between 0.1 VDRM and 0.9 VDRM di/dt Critical rate of rise of on−state current: rated value of the rate of rise of current which the device can withstand without damage. CO Off−state Capacitance f = 1.0 MHz, Vd = 1.0 VRMS, VD = −2 Vdc mA 4 ±5 mA V kV/ms ±500 A/ms 65 pF THERMAL CHARACTERISTICS Symbol TSTG TJ R0JA Rating Value Unit Storage Temperature Range −65 to +150 °C Operating Temperature Range −40 to +150 °C 90 °C/W Thermal Resistance: Junction−to−Ambient Per EIA/JESD51−3, PCB = FR4 3”x4.5”x0.06” Fan out in a 3x3 inch pattern, 2 oz copper track. http://onsemi.com 2 +I ELECTRICAL PARAMETER/RATINGS DEFINITIONS Symbol Parameter VDRM Repetitive Peak Off−state Voltage V(BO) Breakover Voltage IDRM Off−state Current I(BO) Breakover Current IH Holding Current VT On−state Voltage IT On−state Current ITSM Nonrepetitive Peak On−state Current IPPS Nonrepetitive Peak Impulse Current VD Off−state Voltage ID Off−state Current IPPS ITSM IT On−State Region NP−SDMC Series I(BO) VT Off−State Region IH ID −Voltage VD IDRM V(BO) VDRM +Voltage −I Figure 1. Voltage Current Characteristics of TSPD Ipp − PEAK PULSE CURRENT − %Ipp PEAK ON−STATE CURRENT 100 10 1 0.1 1 10 100 CURRENT DURATION (s) tr = rise time to peak value tf = decay time to half value Peak Value 100 Half Value 50 0 1000 0 tr tf TIME (ms) Figure 2. Nonrepetitive On−State Current vs. Time (ITSM) Figure 3. Nonrepetitive On−State Impulse vs. Waveform (IPPS) Detailed Operating Description Short Circuit – When a transient surge fault exceeds the TSPD protection voltage threshold, the devices switches on, and shorts the transient to ground, safely protecting the circuit. The TSPD or Thyristor Surge Protection Device are specialized silicon based overvoltage protectors, used to protect sensitive electronic circuits from damaging overvoltage transient surges caused by induced lightning and powercross conditions. The TSPD protects by switching to a low on state voltage when the specified protection voltage is exceeded. This is known as a “crowbar” effect. When an overvoltage occurs, the crowbar device changes from a high−impedance to a low−impedance state. This low−impedance state then offers a path to ground, shunting unwanted surges away from the sensitive circuits. This crowbar action defines the TSPD’s two states of functionality: Open Circuit and Short Circuit. Open Circuit – The TSPD must remain transparent during normal circuit operation. The device looks like an open across the two wire line. + I(OP) + Protected Equipment − V(OP) TSPD − STSPD looks like an open SCircuit operates normally Normal Circuit Operation I + (Fault) V(Fault) TSPD − + I(Fault) Protected Equipment − Operation during a Fault SFault voltage greater than Vbo occurs STSPD shorts fault to ground SAfter short duration events the O/V switches back to an open condition SWorst case (Fail/Safe) SO/V permanent short SEquipment protected Figure 4. Normal and Fault Conditions http://onsemi.com 3 NP−SDMC Series The electrical characteristics of the TSPD help the user to define the protection threshold for the circuit. During the open circuit condition the device must remain transparent; this is defined by the IDRM. The IDRM should be as low as possible. The typical value is less than 5 mA. The circuit operating voltage and protection voltage must be understood and considered during circuit design. The V(BO) is the guaranteed maximum voltage that the protected circuit will see, this is also known as the protection voltage. The VDRM is the guaranteed maximum voltage that will keep the TSPD in its normal open circuit state. The TSPD V(BO) is typically a 20−30% higher than the VDRM. Based on these characteristics it is critical to choose devices which have a VDRM higher than the normal circuit operating voltage, and a V(BO) which is less than the failure threshold of the protected equipment circuit. A low on−state voltage Vt allows the TSPD to conduct large amounts of surge current (500 A) in a small package size. Once a transient surge has passed and the operating voltage and currents have dropped to their normal level the TSPD changes back to its open circuit state. TSPD’s are useful in helping designers meet safety and regulatory standards in Telecom equipment including GR−1089−CORE, ITU−K.20, ITU−K.21, ITU−K.45, FCC Part 68, UL1950, and EN 60950. ON Semiconductor offers a full range of these products in the NP series product line. DEVICE SELECTION When selecting a TSPD use the following key selection parameters. Off−State Voltage VDRM Choose a TSPD that has an Off−State Voltage greater than the normal system operating voltage. The protector should not operate under these conditions: Example: Vbat = 48 Vmax Vring = 150 Vrms = 150*1.414 = 212 V peak VDRM should be greater than the peak value of these two components: VDRM > 212 + 48 = 260 VDRM Transient Surge Breakover Voltage V(BO) Verify that the TSPD Breakover Voltage is a value less than the peak voltage rating of the circuit it is protecting. Example: Relay breakdown voltage, SLIC maximum voltage, or coupling capacitor maximum rated voltage. Equipment Failure Threshold Volts TSPD Protection Voltage Upper Limit Peak Pulse Current Ipps Choose a Peak Pulse current value which will exceed the anticipated surge currents in testing. Normal System Operating Voltage TSPD Transparent TSPD Protection TSPD Transparent (open) (short) (open) Hold Current (IH) The Hold Current must be greater than the maximum system generated current. If it is not then the TSPD will remain in a shorted condition, even after a transient event has passed. Time Figure 5. Protection During a Transient Surge http://onsemi.com 4 NP−SDMC Series TYPICAL APPLICATION Tip Testing: Tip − Ground Ring − Ground Tip and Ring to Ground Simultaneously Surge Waveforms NP3100SCMC NP3100SDMC 100A 100A Ring NP3100SCMC 200A Figure 6. • 200 A 10 x 1000 ms Needed for GR−1089 • Bottom Element in “Y” Configuration http://onsemi.com 5 NP−SDMC Series PACKAGE DIMENSIONS SMB CASE 403C−01 ISSUE A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. A D INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 B C K J P MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59 H SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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