NRVB0540T1G

MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Schottky Power Rectifier, Surface Mount, 0.5 A, 40 V, SOD-123 Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high frequency rectification, or as a free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. This package provides an alternative to the leadless 34 MELF style package. http://onsemi.com SCHOTTKY BARRIER RECTIFIER 0.5 AMPERES, 40 VOLTS SOD−123 CASE 425 STYLE 1 Features        Guardring for Stress Protection Very Low Forward Voltage Epoxy Meets UL 94 V−0 @ 0.125 in Package Designed for Optimal Automated Board Assembly AEC−Q101 Qualified and PPAP Capable NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements All Packages are Pb−Free* Mechanical Characteristics        MARKING DIAGRAM 1 B4 M G B4MG G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Device Marking: B4 Polarity Designator: Cathode Band Weight: 11.7 mg (approximately) Case: Epoxy Molded Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C max. for 10 Seconds ESD Rating:  Human Body Model = 3B  Machine Model = C ORDERING INFORMATION Package Shipping† SOD−123 (Pb−Free) 3,000/Tape & Reel (8 mm Tape, 7” Real) NRVB0540T1G SOD−123 (Pb−Free) 3,000/Tape & Reel (8 mm Tape, 7” Real) Device MBR0540T1G MBR0540T3G SOD−123 10,000/Tape & Reel (Pb−Free) (8 mm Tape, 13” Real) NRVB0540T3G SOD−123 10,000/Tape & Reel (Pb−Free) (8 mm Tape, 13” Real) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.  Semiconductor Components Industries, LLC, 2012 January, 2012 − Rev. 7 1 Publication Order Number: MBR0540T1/D MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115C) Symbol Value Unit VRRM VRWM VR 40 V IO Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage/Operating Case Temperature Range Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25C) A 0.5 A 1.0 A 5.5 Tstg, TC −55 to +150 C TJ −55 to +150 C dv/dt V/ms 1000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Lead (Note 1) Thermal Resistance − Junction−to−Ambient (Note 2) Symbol Value Unit Rtjl Rtja 118 206 C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 X 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value vF Maximum Instantaneous Forward Voltage (Note 3) TJ = 25C TJ = 100C 0.51 0.62 0.46 0.61 TJ = 25C TJ = 100C 20 10 13,000 5,000 (iF = 0.5 A) (iF = 1 A) IR Maximum Instantaneous Reverse Current (Note 3) Unit (VR = 40 V) (VR = 20 V) V mA 100 10 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) 3. Pulse Test: Pulse Width  250 ms, Duty Cycle  2.0%. 25C 1.0 TJ = 125C TJ = -40C TJ = 25C TJ = 100C 0.1 0.2 0.4 0.6 0.8 1.2 1.0 10 1.0 TJ = 125C TJ = 100C TJ = 25C 0.1 0.2 0.4 0.6 0.8 1.0 vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage http://onsemi.com 2 1.2 MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G 100E-3 I R, MAXIMUM REVERSE CURRENT (AMPS) I R, REVERSE CURRENT (AMPS) 100E-3 10E-3 TJ = 125C 1.0E-3 10E-3 TJ = 100C 1.0E-3 100E-6 100E-6 TJ = 100C 10E-6 1.0E-6 TJ = 25C 100E-9 10E-6 TJ = 25C 1.0E-6 100E-9 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 40 0 Figure 3. Typical Reverse Current PFO , AVERAGE POWER DISSIPATION (WATTS) I O , AVERAGE FORWARD CURRENT (AMPS) dc 0.7 FREQ = 20 kHz SQUARE WAVE 0.5 Ipk/Io = p 0.4 Ipk/Io = 5 0.3 Ipk/Io = 10 0.2 Ipk/Io = 20 0.1 0 0 40 20 60 80 100 120 0.40 SQUARE WAVE 0.35 dc Ipk/Io = p 0.30 Ipk/Io = 5 0.25 Ipk/Io = 10 0.20 Ipk/Io = 20 0.15 0.10 0.05 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TL, LEAD TEMPERATURE (C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation TJ , DERATED OPERATING TEMPERATURE ( C) C, CAPACITANCE (pF) TJ = 25C 10 5.0 0.45 140 100 0 40 Figure 4. Maximum Reverse Current 0.8 0.6 10 20 30 VR, REVERSE VOLTAGE (VOLTS) 10 15 20 25 30 35 40 0.8 126 124 Rtja = 118C/W 122 120 118 149C/W 116 180C/W 114 206C/W 112 228C/W 110 0 5.0 10 15 20 25 30 35 40 VR, REVERSE VOLTAGE (VOLTS) VR, DC REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating* * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 3 R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G 1E+00 50% 20% 10% 1E-01 5.0% 2.0% 1.0% 1E-02 Rtjl(t) = Rtjl*r(t) 1E-03 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1,000 10 100 1,000 T, TIME (s) R (T) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Thermal Response Junction to Lead 1E+00 50% 20% 1E-01 10% 5.0% 2.0% 1E-02 1.0% Rtjl(t) = Rtjl*r(t) 1E-03 0.00001 0.0001 0.001 0.01 0.1 1.0 T, TIME (s) Figure 10. Thermal Response Junction to Ambient http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123 CASE 425−04 ISSUE G DATE 07 OCT 2009 SCALE 5:1 D A ÂÂÂÂ ÂÂÂÂ ÂÂÂÂ A1 1 HE DIM A A1 b c D E HE L q E 2 q L b C ÉÉÉ ÉÉÉ ÉÉÉ 2.36 0.093 4.19 0.165 ÉÉÉ ÉÉÉ ÉÉÉ MILLIMETERS MIN NOM MAX 0.94 1.17 1.35 0.00 0.05 0.10 0.51 0.61 0.71 ----0.15 1.40 1.60 1.80 2.54 2.69 2.84 3.56 3.68 3.86 ----0.25 --10 ° 0° MIN 0.037 0.000 0.020 --0.055 0.100 0.140 0.010 0° INCHES NOM 0.046 0.002 0.024 --0.063 0.106 0.145 ----- MAX 0.053 0.004 0.028 0.006 0.071 0.112 0.152 --10 ° GENERIC MARKING DIAGRAM* 1 SOLDERING FOOTPRINT* 0.91 0.036 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. XXXMG G XXX = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) 1.22 0.048 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE 2. ANODE SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42927B SOD−123 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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