NRVB1035G

MBR1035, MBR1045 SWITCHMODE™ Power Rectifiers Features and Benefits • • • • • • Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175°C Operating Junction Temperature 10 A Total Pb−Free Packages are Available* http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 10 AMPERES 35 to 45 VOLTS Applications • Power Supply – Output Rectification • Power Management • Instrumentation 3 1, 4 Mechanical Characteristics • • • • • • Case: Epoxy, Molded Epoxy Meets UL 94, V−0 @ 0.125 in Weight: 1.9 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds ESD Rating: Human Body Model 3B Machine Model C *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MARKING DIAGRAM 4 TO−220AC CASE 221B PLASTIC AY WWG B10x5 KA 1 3 A Y WW G B10x5 x KA = Assembly Location = Year = Work Week = Pb−Free Package = Device Code = 3 or 4 = Diode Polarity ORDERING INFORMATION Device MBR1035 MBR1035G MBR1045 MBR1045G © Semiconductor Components Industries, LLC, 2008 June, 2008 − Rev. 8 1 Package Shipping TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail TO−220 50 Units/Rail TO−220 (Pb−Free) 50 Units/Rail Publication Order Number: MBR1035/D MBR1035, MBR1045 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage MBR1035 MBR1045 VRRM VRWM VR Average Rectified Forward Current (TC = 135°C, Per Device) IF(AV) Peak Repetitive Forward Current, (Square Wave, 20 kHz, TC = 135°C) IFRM 10 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C Voltage Rate of Change (Rated VR) V 35 45 A 10 dv/dt V/ms 10,000 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Conditions Symbol Max Unit °C/W Maximum Thermal Resistance, Junction−to−Case Min. Pad RqJC 2.0 Maximum Thermal Resistance, Junction−to−Ambient Min. Pad RqJA 60 Min Typical Max − − − 0.55 0.67 0.78 0.57 0.72 0.84 − − 5.3 0.008 15 0.1 ELECTRICAL CHARACTERISTICS Characteristic Symbol Instantaneous Forward Voltage (Note 2) (iF = 10 Amps, Tj = 125°C) (iF = 20 Amps, Tj = 125°C) (iF = 20 Amps, Tj = 25°C) vF Instantaneous Reverse Current (Note 2) (Rated dc Voltage, Tj = 125°C) (Rated dc Voltage, Tj = 25°C) iR 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 Unit V mA MBR1035, MBR1045 100 100 TJ = 150°C TJ = 150°C 70 70 100°C 25°C 100°C 50 25°C 30 30 20 20 iF, INSTANTANEOUS FORWARD CURRENT (AMPS) iF, INSTANTANEOUS FORWARD CURRENT (AMPS) 50 10 7.0 5.0 3.0 2.0 1.0 10 7.0 5.0 3.0 2.0 1.0 0.7 0.7 0.5 0.5 0.3 0.3 0.2 0.2 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.2 0.4 0.6 0.8 1.0 1.2 vF, INSTANTANEOUS VOLTAGE (VOLTS) vF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Maximum Forward Voltage Figure 2. Typical Forward Voltage http://onsemi.com 3 1.4 MBR1035, MBR1045 200 IFSM , PEAK HALF-WAVE CURRENT (AMPS) 100 TJ = 150°C 125°C IR , REVERSE CURRENT (mA) 10 100°C 1.0 75°C 0.1 25°C 0.01 0.001 5.0 10 20 25 30 35 40 45 50 30 20 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 Figure 3. Maximum Reverse Current Figure 4. Maximum Surge Capability IF(AV) , AVERAGE FORWARD CURRENT (AMPS) NUMBER OF CYCLES AT 60 Hz 20 RATED VOLTAGE APPLIED I 15 I PK + p(RESISTIVELOAD) AV I SQUARE WAVE PK + 5 10 (CAPACITIVELOAD) I AV 10 5.0 20 dc 0 120 130 140 150 70 100 16 RATED VOLTAGE APPLIED 14 I 12 I PK + p(RESISTIVELOAD) AV 10 SQUARE WAVE 8.0 6.0 dc 4.0 I (CAPACITIVELOAD) PK + 20, 10, 5 I 2.0 AV 0 160 0 20 40 60 80 100 120 140 TC, CASE TEMPERATURE (°C) TA, AMBIENT TEMPERATURE (°C) Figure 5. Current Derating, Infinite Heatsink Figure 6. Current Derating, RqJA = 16°C/W 10 9.0 SINE WAVE RESISTIVE LOAD 8.0 dc SQUARE WAVE I 7.0 (CAPACITIVELOAD) PK + 5 I 6.0 AV 10 5.0 20 4.0 3.0 TJ = 150°C 2.0 1.0 0 0 70 VR, REVERSE VOLTAGE (VOLTS) 110 PF(AV) , AVERAGE FORWARD POWER DISSIPATION (WATTS) 15 IF(AV) , AVERAGE FORWARD CURRENT (AMPS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) 0 100 2.0 4.0 6.0 8.0 10 12 14 16 5.0 RATED VOLTAGE APPLIED RqJA = 60°C/W 4.0 I I 3.0 PK + p(RESISTIVELOAD) AV SQUARE WAVE 2.0 dc 1.0 I (CAPACITIVELOAD) PK + 20, 10, 5 I AV 0 0 20 40 60 80 100 120 140 IF(AV), AVERAGE FORWARD CURRENT (AMPS) TA, AMBIENT TEMPERATURE (°C) Figure 7. Forward Power Dissipation Figure 8. Current Derating, Free Air http://onsemi.com 4 160 160 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) MBR1035, MBR1045 1.0 0.7 0.5 0.3 0.2 Ppk Ppk tp 0.1 0.07 0.05 TIME t1 DUTY CYCLE, D = tp/t1 PEAK POWER, Ppk, is peak of an equivalent square power pulse. DTJL = Ppk • RqJL [D + (1 - D) • r(t1 + tp) + r(tp) - r(t1)] where: DTJL = the increase in junction temperature above the lead temperature. r(t) = normalized value of transient thermal resistance at time, t, i.e.: r(t1 + tp) = normalized value of transient thermal resistance at time, t1 + tp. 0.03 0.02 0.01 0.01 0.1 1.0 10 100 t, TIME (ms) Figure 9. Thermal Response 1500 C, CAPACITANCE (pF) 1000 700 500 MAXIMUM 300 TYPICAL 200 150 0.05 0.1 0.2 0.5 1.0 2.0 5.0 VR, REVERSE VOLTAGE (VOLTS) Figure 10. Capacitance SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. http://onsemi.com 5 10 20 50 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220, 2−LEAD CASE 221B−04 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B Q SCALE 1:1 F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D J G STYLE 1: PIN 1. 2. 3. 4. DOCUMENT NUMBER: DESCRIPTION: 98ASB42149B TO−220, 2−LEAD CATHODE N/A ANODE CATHODE DATE 12 APR 2013 STYLE 2: PIN 1. 2. 3. 4. INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 ANODE N/A CATHODE ANODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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