NRVB440MFSWFT1G

DATA SHEET www.onsemi.com Switch Mode Power Rectifiers MBR440MFS, NRVB440MFS SCHOTTKY BARRIER RECTIFIERS 4 AMPERES 40 VOLTS These state−of−the−art devices have the following features: Features 5,6 1,2,3 • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable WF Suffix for Products with Wettable Flanks These are Pb−Free and Halide−Free Devices 1 MARKING DIAGRAM A • C B440 AYWZZ A Mechanical Characteristics: • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements (FULL−CUT SO8FL WF) CASE 507BA DFNW5 SO−8 FLAT LEAD CASE 488AA STYLE 2 A C Not Used B440 A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability Applications • Ideally Suited for use as an Output Rectifier in High Frequency • • (up to 2 MHz) Automotive and Non−Automotive Applications Output Rectification in Compact Portable Consumer Applications Freewheeling Diode used with Inductive Loads ORDERING INFORMATION Device Package Shipping† MBR440MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel MBR440MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB440MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB440MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB440MFSWFT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB440MFSWFT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 October, 2022 − Rev. 2 1 Publication Order Number: MBR440MFS/D MBR440MFS, NRVB440MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 40 Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 4.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 165°C) IFRM 8.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C EAS 10 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 2.4 °C/W 0.58 0.59 0.63 0.65 10 0.070 15 0.8 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 4 Amps, TJ = 125°C) (iF = 4 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 V mA MBR440MFS, NRVB440MFS TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) TA = 175°C 10 TA = 125°C TA = 150°C 1 TA = 25°C TA = −40°C 0.1 0.2 0.3 0.4 0.5 0.7 0.6 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 0.9 1.0 Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 TA = 175°C 1.E−04 TA = 150°C 1.E−02 TA = 125°C 1.E−03 TA = 150°C 1.E−04 TA = 25°C 1.E−05 TA = 175°C 1.E−01 TA = 125°C 1.E−03 TA = 25°C 1.E−05 1.E−06 1.E−07 TA = −40°C 1.E−06 TA = −40°C 1.E−07 1.E−08 1.E−08 0 5 10 15 20 25 30 35 40 1.E−09 0 5 10 15 20 25 30 35 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) TA = −40°C Figure 1. Typical Instantaneous Forward Characteristics 1.E−02 TJ = 25°C 100 0 TA = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−01 10 TA = 150°C 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E+00 1.E−09 1.E−10 TA = 125°C 0.1 0.9 TA = 175°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) 0 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 20 30 40 10 9 RqJC = 2.4°C/W 8 7 DC 6 5 Square Wave 4 3 2 1 0 60 80 100 120 140 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO−220AB www.onsemi.com 3 40 MBR440MFS, NRVB440MFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 IPK/IAV = 20 7 IPK/IAV = 10 TJ = 175°C 6 5 IPK/IAV = 5 4 Square Wave 3 2 DC 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle R(t) (°C/W) 20% 10 10% 5% 2% 1 0.1 0.01 Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 1% Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 8. Thermal Characteristics www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A DATE 03 FEB 2021 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX A Y W ZZ = Specific Device Code *This information is generic. Please refer to = Assembly Location device data sheet for actual part marking. = Year Pb−Free indicator, “G” or microdot “ G”, = Work Week may or may not be present. Some products = Lot Traceability may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26450H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFNW5 5x6 (FULL−CUT SO8FL WF) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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