NRVB460MFST3G

MBR460MFS, NRVB460MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage Drop 175°C Operating Junction Temperature NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 4 AMPERES 60 VOLTS 5,6 1,2,3 MARKING DIAGRAM Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements Applications • Ideally Suited for use as an Output Rectifier in High Frequency (up to 2 MHz) Automotive and Non−Automotive Applications • Output Rectification in Compact Portable Consumer Applications • Freewheeling Diode used with Inductive Loads A 1 SO−8 FLAT LEAD CASE 488AA STYLE 2 B460 A Y W ZZ A A C B460 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† MBR460MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel MBR460MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB460MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB460MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 June, 2013 − Rev. 0 1 Publication Order Number: MBR460MFS/D MBR460MFS, NRVB460MFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 60 Average Rectified Forward Current (Rated VR, TC = 165°C) IF(AV) 4.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 165°C) IFRM 8.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 40 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C EAS 10 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 2.4 °C/W 0.65 0.71 0.72 0.74 6.5 0.01 20 0.2 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 4 Amps, TJ = 125°C) (iF = 4 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 V mA MBR460MFS, NRVB460MFS TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) TA = 175°C 10 TA = 125°C TA = 150°C 1 TA = 25°C TA = −40°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.8 0.7 Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 TA = 175°C 1.E−04 TA = 150°C 1.E−02 TA = 125°C 1.E−03 TA = 150°C 1.E−04 TA = 25°C 1.E−05 TA = 25°C 1.E−05 1.E−06 0.9 TA = 175°C 1.E−01 TA = 125°C 1.E−03 1.E−06 1.E−07 1.E−08 1.E−07 TA = −40°C TA = −40°C 1.E−08 0 10 20 30 40 50 60 1.E−09 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) TA = −40°C Figure 1. Typical Instantaneous Forward Characteristics 1.E−02 TJ = 25°C 100 0 TA = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−01 10 TA = 150°C 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E+00 1.E−09 1.E−10 TA = 125°C 0.1 0.9 TA = 175°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) 0 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 20 30 40 50 60 10 9 RqJC = 2.4°C/W 8 7 DC 6 5 Square Wave 4 3 2 1 0 60 80 100 120 140 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO−220AB http://onsemi.com 3 60 MBR460MFS, NRVB460MFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 IPK/IAV = 20 7 IPK/IAV = 10 TJ = 175°C 6 5 IPK/IAV = 5 4 Square Wave 3 2 DC 1 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle R(t) (°C/W) 20% 10 10% 5% 2% 1 0.1 0.01 Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB 1% Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 8. Thermal Characteristics http://onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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