NRVB830MFST3G

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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MBR830MFS, NRVB830MFS SWITCHMODE Power Rectifiers These state−of−the−art devices have the following features: Features • Low Power Loss / High Efficiency • New Package Provides Capability of Inspection and Probe After • • • • • • Board Mounting Guardring for Stress Protection Low Forward Voltage 150°C Operating Junction Temperature Wettable Flacks Option Available NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices http://onsemi.com SCHOTTKY BARRIER RECTIFIERS 8 AMPERES 30 VOLTS 5,6 1,2,3 MARKING DIAGRAM Mechanical Characteristics: • Case: Epoxy, Molded • Lead Finish: 100% Matte Sn (Tin) • Lead and Mounting Surface Temperature for Soldering Purposes: • 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V 30 Average Rectified Forward Current (Rated VR, TC = 143°C) IF(AV) 8.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 143°C) IFRM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 Storage Temperature Range Tstg −65 to +150 °C Operating Junction Temperature TJ −40 to +150 °C Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) EAS 100 mJ ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 A A 1 A SO−8 FLAT LEAD CASE 488AA STYLE 2 B830 A Y W ZZ A C B830 AYWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Device Package Shipping† MBR830MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel MBR830MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel NRVB830MFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NRVB830MFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. NOTE: The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RJA. © Semiconductor Components Industries, LLC, 2013 October, 2013 − Rev. 0 1 Publication Order Number: MBR830MFS/D MBR830MFS, NRVB830MFS THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC − 2.0 °C/W 0.44 0.50 0.57 0.70 15 0.020 50 0.200 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 8 Amps, TJ = 125°C) (iF = 8 Amps, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR V mA 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TYPICAL CHARACTERISTICS 10 150°C 1 125°C −40°C 25°C 0.1 0.0 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 10 150°C 125°C 1.0 25°C −40°C 0.1 0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1.E+00 1.E−01 1.E−01 TA = 150°C 1.E−02 TA = 125°C 1.E−03 TA = 150°C 1.E−02 TA = 125°C 1.E−03 1.E−04 1.E−04 TA = 25°C 1.E−05 TA = 25°C 1.E−05 1.E−06 1.E−06 1.E−07 TA = −40°C 1.E−08 1.E−07 TA = −40°C 1.E−08 1.E−09 1.E−10 1.E−09 0 5 10 15 20 25 30 0 5 10 15 20 25 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics http://onsemi.com 2 30 MBR830MFS, NRVB830MFS TYPICAL CHARACTERISTICS TJ = 25°C IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 10000 1000 100 10 0 5 10 15 20 25 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 RqJC = 2.0°C/W dc Square Wave 60 30 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO−220AB 160 8 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) IPK/IAV = 20 TJ = 150°C 7 IPK/IAV = 10 6 IPK/IAV = 5 5 4 3 2 Square Wave 1 dc 0 0 1 2 3 4 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 R(t) (°C/W) 10 50% Duty Cycle 20% 10% 5% 2% 1 1% 0.1 0.01 Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 8. Thermal Response http://onsemi.com 3 1 10 100 1000 MBR830MFS, NRVB830MFS PACKAGE DIMENSIONS DFN6 5x6, 1.27P (SO8 FL) CASE 488AA ISSUE H 2X 0.20 C D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q A1 4 TOP VIEW 0.10 C 3X C e SEATING PLANE DETAIL A A STYLE 2: PIN 1. ANODE 2. ANODE 3. ANODE 4. NO CONNECT 5. CATHODE 0.10 C SIDE VIEW 8X DETAIL A SOLDERING FOOTPRINT* b 0.10 C A B 0.05 c 3X 4X 1.270 0.750 4X 1.000 e/2 L 1 4 0.965 K 1.330 E2 PIN 5 (EXPOSED PAD) L1 2X 0.905 2X M 0.495 4.530 3.200 G MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.70 4.90 5.10 3.80 4.00 4.20 6.15 BSC 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 0.475 D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 4 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MBR830MFS/D