MBR860MFS, NRVB860MFS
Switch-mode
Power Rectifiers
These state−of−the−art devices have the following features:
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
60 VOLTS
5,6
1,2,3
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
60
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
8.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 165°C)
IFRM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
−65 to +175
Operating Junction Temperature
TJ
−55 to +175
°C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
40
mJ
MARKING
DIAGRAM
A
1
A
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
B860
A
Y
W
ZZ
A
C
B860
AYWZZ
C
Not Used
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
150
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Device
Package
Shipping†
MBR860MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
MBR860MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NRVB860MFST1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NRVB860MFST3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
A
°C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
1
Publication Order Number:
MBR860MFS/D
MBR860MFS, NRVB860MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
Typ
Max
Unit
RθJC
−
2.0
°C/W
0.60
0.65
0.72
0.80
25
0.015
75
0.150
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 8 Amps, TJ = 125°C)
(iF = 8 Amps, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
V
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
TYPICAL CHARACTERISTICS
100
TA = 175°C
1 150°C
125°C
0.1
0
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
10
0.1
0.2
25°C −40°C
0.3
0.4
10
TA = 175°C
150°C
1
125°C
0.1
0.5
0.6
0.7
0.8
0
0.1
0.2
25°C −40°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1.E+00
TA = 175°C
TA = 150°C
1.E−01
1.E−02
1.E−02
TA = 125°C
1.E−03
TA = 175°C
TA = 150°C
1.E−01
TA = 125°C
1.E−03
1.E−04
1.E−04
TA = 25°C
1.E−05
TA = 25°C
1.E−05
1.E−06
1.E−06
1.E−07
1.E−07
1.E−08
1.E−08
TA = −40°C
1.E−09
1.E−10
TA = −40°C
1.E−09
1.E−10
0
10
20
30
40
50
60
0
10
20
30
40
50
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
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2
60
MBR860MFS, NRVB860MFS
TYPICAL CHARACTERISTICS
16
TJ = 25°C
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
1,000
100
14
dc
12
10
Square Wave
8
6
4
RqJC = 2.0°C/W
2
0
10
0
10
20
30
40
50
60
60
80
100
120
140
160
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating TO−220AB
180
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
8
IPK/IAV = 20
TJ = 175°C
7
IPK/IAV = 10
6
IPK/IAV = 5
5
4
3
2
Square Wave
1
dc
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
R(t) (°C/W)
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Assumes 25°C ambient and soldered to
a 600 mm2 − oz copper pad on PCB
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.1
0.01
PULSE TIME (sec)
Figure 8. Thermal Response
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3
1
10
100
1,000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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