DATA SHEET
www.onsemi.com
Switch Mode Power
Rectifiers
MBR8H100MFS,
NRVB8H100MFS
SCHOTTKY BARRIER
RECTIFIERS
8 AMPERES
100 VOLTS
Features
• Low Power Loss / High Efficiency
• New Package Provides Capability of Inspection and Probe After
•
•
•
•
•
•
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
175°C Operating Junction Temperature
WF Suffix for Products with Wettable Flanks
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
VRRM
VRWM
VR
V
100
Average Rectified Forward Current
(Rated VR, TC = 165°C)
IF(AV)
8.0
A
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 162°C)
IFRM
16
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
IFSM
75
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
EAS
75
mJ
3B
ESD Rating (Machine Model)
M4
October, 2022 − Rev. 4
(FULL−CUT SO8FL WF)
CASE 507BA
DFNW5
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
MARKING DIAGRAM
A
C
B8H100
AYWZZ
A
A
C
Not Used
B8H100
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA
© Semiconductor Components Industries, LLC, 2015
1
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
ESD Rating (Human Body Model)
5,6
1,2,3
1
Package
Shipping†
MBR8H100MFST1G
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
MBR8H100MFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVB8H100MFST1G
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVB8H100MFST3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
NRVB8H100MFSWFT1G
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
NRVB8H100MFSWFT3G
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
MBR8H100MFS/D
MBR8H100MFS, NRVB8H100MFS
THERMAL CHARACTERISTICS
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) (Note 2)
Characteristic
RθJC
−
2.2
°C/W
Thermal Resistance, Junction−to−Ambient, Steady State (Note 2)
RθJA
−
53.1
°C/W
0.68
0.81
0.76
0.90
180
0.06
300
2
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 8 Amps, TJ = 125°C)
(iF = 8 Amps, TJ = 25°C)
vF
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
V
mA
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
2. Surface−mounted on FR4 board using a 650 mm2, 1 oz. Cu pad.
TYPICAL CHARACTERISTICS
100
TA = 175°C
1
0.1
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
10
150°C
125°C
25°C
0
0.2
−40°C
0.4
0.6
1.2
1.0
0.8
TA = 175°C
150°C
1
125°C
25°C
0
0.2
0.4
−40°C
0.8
0.6
1.0
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E−01
1.E−02
1.E−01
1.E−02
TA = 175°C
1.E−03
1.E−05
1.E−06
1.E−07
TA = 175°C
1.E−03
TA = 150°C
TA = 125°C
1.E−04
1.E−08
1.E−09
1.E−10
1.E−11
1.E−12
10
0.1
IR, INSTANTANEOUS REVERSE CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
TA = 125°C
1.E−04
1.E−05
1.E−06
TA = 25°C
1.E−07
TA = 25°C
1.E−08
1.E−09
TA = −40°C
0
10
20
30
40
50
60
70
80
1.E−10
1.E−11
90 100
TA = −40°C
0
10
20
30
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
www.onsemi.com
2
MBR8H100MFS, NRVB8H100MFS
TYPICAL CHARACTERISTICS
20
TJ = 25°C
18
IF(AV), AVERAGE FORWARD
CURRENT (A)
C, JUNCTION CAPACITANCE (pF)
1,000
100
10
0
10
20
30
40
60
50
70
80
90
16
14
10
Square Wave
8
6
4
2
0
100
dc
12
RqJC = 2.2°C/W
60
80
100
120
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
PF(AV), AVERAGE FORWARD POWER DISSIPATION (W)
8
IPK/IAV = 20
7
160
TJ = 175°C
IPK/IAV = 10
6
IPK/IAV = 5
5
4
3
Square Wave
2
dc
1
0
0
1
2
3
4
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
Assumes 25°C ambient and soldered
to a 650 mm2 1 oz copper pad
0.1
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
TIME (sec)
Figure 8. Thermal Response
www.onsemi.com
3
10
100
1,000
10,000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
DATE 03 FEB 2021
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX
A
Y
W
ZZ
= Specific Device Code *This information is generic. Please refer to
= Assembly Location
device data sheet for actual part marking.
= Year
Pb−Free indicator, “G” or microdot “ G”,
= Work Week
may or may not be present. Some products
= Lot Traceability
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26450H
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DFNW5 5x6 (FULL−CUT SO8FL WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
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