MBRA1H100, NRVBA1H100
Surface Mount
Schottky Power Rectifier
SMA Power Surface Mount Package
Employing the Schottky Barrier principle in a large area
metal−to−silicon power diode. State of the art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity diodes in surface mount applications
where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 100 VOLTS
Features
•
•
•
•
•
•
•
Small Compact Surface Mountable Package with J−Bent Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Low Forward Voltage Drop
Guardring for Stress Protection
NRVBA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SMA
CASE 403D
1
Cathode
MARKING DIAGRAMS
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 70 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Lead Indicated by Polarity Band
ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
Device Meets MSL 1 Requirements
2
Anode
A110
AYWWG
A110
= Device Code
A
= Assembly Location**
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter pin),
the front side assembly code may be blank.
ORDERING INFORMATION
Device
Package
Shipping†
MBRA1H100T3G
SMA
5,000 /
(Pb−Free) Tape & Reel
NRVBA1H100T3G*
SMA
5,000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
April, 2017 − Rev. 3
1
Publication Order Number:
MBRA1H100/D
MBRA1H100, NRVBA1H100
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 167°C)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage and Operating Junction Temperature Range (Note 1)
IFSM
Tstg, TJ
1.0
50
−65 to +175
A
A
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Characteristic
YJCL
14
°C/W
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
75
°C/W
RqJA
280
°C/W
Symbol
Value
Unit
Thermal Resistance, Junction−to−Ambient (Note 3)
mm2
in2)
2. Mounted with 700
copper pad size (Approximately 1
1 oz FR4 Board.
3. Mounted with pad size approximately 6 mm2 copper, 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1.0 A, TJ = 25°C)
(IF = 2.0 A, TJ = 25°C)
(IF = 1.0 A, TJ = 125°C)
(IF = 2.0 A, TJ = 125°C)
VF
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
0.76
0.84
0.61
0.68
40
0.5
V
mA
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
MBRA1H100, NRVBA1H100
TYPICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
150°C 125°C 25°C
10
1
0.1
0
0.2
0.4
0.6
1.0
0.8
1.2
0
0.4
0.2
0.6
0.8
1.0
1.2
1.4
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.6
IR, REVERSE CURRENT (mA)
10
150°C
1
0.1
125°C
0.01
0.001
0.0001
25°C
0
10
20
30
40
50
60
125°C
0.01
25°C
0.001
70
80
90
100
0.00001
0
10
20
30
40
50
60
70
90 100
80
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
RqJL = 14°C/W
dc
1.5
Square Wave
1.0
0.5
140
0.1
0.0001
2.0
0
135
150°C
1
145
150
155
160
165
170
175
PFO, AVERAGE POWER DISSIPATION (W)
IR, REVERSE CURRENT (mA)
IF(AV), AVERAGE FORWARD CURRENT (A)
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
10
0.00001
10
0.1
1.4
25°C
150°C 125°C
1.0
TJ = 175°C
Square Wave
0.8
dc
0.6
0.4
0.2
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
1.6
MBRA1H100, NRVBA1H100
TYPICAL CHARACTERISTICS
140
TJ = 25°C
C, CAPACITANCE (pF)
120
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100
VR, REVERSE VOLTAGE (V)
Figure 7. Capacitance
1000
50% (DUTY CYCLE)
R(t) (C/W)
100
10
1.0
20%
10%
5.0%
2.0%
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
PULSE TIME (s)
Figure 8. Thermal Response, Junction−to−Ambient (6 mm2 pad)
100
R(t) (C/W)
10
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 in2 pad)
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4
MBRA1H100, NRVBA1H100
PACKAGE DIMENSIONS
SMA
CASE 403D
ISSUE H
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,
1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L.
E
b
DIM
A
A1
b
c
D
E
HE
L
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
(SEE STYLES)
MIN
1.97
0.05
1.27
0.15
2.29
4.06
4.83
0.76
MILLIMETERS
NOM
MAX
2.10
2.20
0.10
0.20
1.45
1.63
0.28
0.41
2.60
2.92
4.32
4.57
5.21
5.59
1.14
1.52
MIN
0.078
0.002
0.050
0.006
0.090
0.160
0.190
0.030
INCHES
NOM
0.083
0.004
0.057
0.011
0.103
0.170
0.205
0.045
MAX
0.087
0.008
0.064
0.016
0.115
0.180
0.220
0.060
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
A
L
c
A1
SOLDERING FOOTPRINT*
4.000
0.157
2.000
0.079
2.000
0.079
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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For additional information, please contact your local
Sales Representative
MBRA1H100/D
