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NRVBA2H100NT3G

NRVBA2H100NT3G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SMA

  • 描述:

    DIODE SCHOTTKY 2A 100V 1201 SMA2

  • 数据手册
  • 价格&库存
NRVBA2H100NT3G 数据手册
DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 100 VOLTS MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G MARKING DIAGRAMS This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. Features • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Overvoltage Protection Low Forward Voltage Drop NBR and NRVB Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 70 mg (SMA), 95 mg (SMB) (Approximately) Cathode Polarity Band Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ESD Ratings: ♦ Charged Device Model > 1000 V (Class C5) ♦ Human Body Model = 3B These Devices are Pb−Free and are RoHS Compliant Device Meets MSL1 Requirements © Semiconductor Components Industries, LLC, 2012 January, 2022 − Rev. 14 A210 AYWWG SMB CASE 403A AYWW B210G G A210 = MBRA2H100T3G NRVBA2H100T3G B210 = MBRS2H100T3G NBRS2H100T3G A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION Mechanical Characteristics • • • • • SMA CASE 403D 1 Package Shipping† SMA (Pb−Free) 5,000 / Tape & Reel MBRS2H100T3G, SMB NBRS2H100T3G* (Pb−Free) NBRS2H100NT3G*, NBRS2H100T3G−VF01* 2,500 / Tape & Reel SMA (Pb−Free) 5,000 / Tape & Reel Device MBRA2H100T3G, NRVBA2H100T3G* NRVBA2H100NT3G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: MBRS2H100/D MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 150°C) Symbol Value Unit VRRM VRWM VR 100 V IO 2.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −65 to +175 °C 130 A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction−to−Lead (Note 2) MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G YJCL Thermal Resistance, Junction−to−Ambient (Note 2) MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G RqJA Thermal Resistance, Junction−to−Ambient (Note 3) MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G RqJA Value 14 12 75 71 275 230 Unit °C/W °C/W °C/W 2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board. 3. Mounted with minimum recommended pad size 1 oz FR4 Board. ELECTRICAL CHARACTERISTICS Value Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 4) (iF = 2.0 A) vF Maximum Instantaneous Reverse Current (Note 4) (VR = 100 V) IR 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 TJ = 25°C TJ = 125°C 0.79 0.65 0.008 1.5 Unit V mA MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G TYPICAL CHARACTERISTICS 100 150°C 25°C 125°C 10 IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 1.0 0.9 1.1 150°C 0.3 0.5 0.9 1.1 1.3 1.5 Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 10 150°C 125°C 0.1 0.01 0.001 25°C 0.0001 0 10 20 30 40 50 60 70 80 90 100 150°C 1 125°C 0.1 0.01 25°C 0.001 0 10 20 VR, REVERSE VOLTAGE (V) 30 40 50 60 80 70 90 100 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current 4.0 400 TJ = 25°C f = 1 MHz 350 300 250 200 150 100 50 0 10 20 30 40 50 60 70 80 90 IF(AV), AVERAGE FORWARD CURRENT (A) 450 C, CAPACITANCE (pF) 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1 0 25°C 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) IR, REVERSE CURRENT (mA) IR, REVERSE CURRENT (mA) 125°C 0.1 1.2 10 0.00001 10 3.0 Square Wave 2.0 1.0 0 100 RqJL = 14°C/W dc 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Capacitance Figure 6. Current Derating − Lead www.onsemi.com 3 170 MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G 4.0 RqJA = 71°C/W dc 3.0 RqJA = 100°C/W dc 2.0 Square Wave 1.0 0 0 20 40 60 80 100 120 140 160 175 PFO, AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 5 TJ = 175°C 4 Square Wave 3 dc 2 1 0 0 1 R(t) (C/W) 4 5 Figure 8. Maximum Forward Power Dissipation Figure 7. Current Derating, Ambient 10 3 IO, AVERAGE FORWARD CURRENT (A) TA, AMBIENT TEMPERATURE (°C) 100 2 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 SINGLE PULSE 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 645.2 mm2 PCB Cu thk 1.0 oz 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000 PULSE TIME (s) Figure 9. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRS2H100T3G/NBRS2H100T3G/NBRS2H100NT3G 1000 50% (DUTY CYCLE) R(t) (C/W) 100 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 0.01 SMB Die X 1.8 mm Die Y 1.8 mm PCB Cu Area 11.8 mm2 PCB Cu thk 1.0 oz SINGLE PULSE 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (s) 1.0 Figure 10. Thermal Response, Junction−to−Ambient (min pad) − MBRS2H100T3G/NBRS2H100T3G/NBRS2H100NT3G www.onsemi.com 4 10 100 1000 MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G TYPICAL CHARACTERISTICS 100 R(t) (C/W) 10 50% (DUTY CYCLE) 20% 10% 5.0% 2.0% 1.0 1.0% 0.1 0.01 SINGLE PULSE 0.001 0.000001 0.0001 0.00001 0.001 0.01 1.0 0.1 10 100 1000 PULSE TIME (s) Figure 11. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRA2H100T3G/NRVBA2H100T3G 1000 50% (DUTY CYCLE) 10 1.0 20% 10% 5.0% 2.0% 1.0% 0.1 SINGLE PULSE 0.01 0.000001 0.0001 0.00001 0.001 0.01 1.0 0.1 10 100 PULSE TIME (s) Figure 12. Thermal Response, Junction−to−Ambient (min pad) − MBRA2H100T3G/NRVBA2H100T3G 2.5 2.0 oz Power Based on TA = 25°C POWER DISSIPATION (W) R(t) (C/W) 100 2.0 1.0 oz 1.5 1.0 0.5 0 0 100 200 300 400 500 600 700 COPPER AREA (sq mm) Figure 13. PD, Junction−to−Ambient (URS copper area) www.onsemi.com 5 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales
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