DATA SHEET
www.onsemi.com
Surface Mount
Schottky Power Rectifier
SMA/SMB Power Surface Mount Package
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 100 VOLTS
MBRS2H100T3G,
NBRS2H100T3G,
NBRS2H100NT3G,
MBRA2H100T3G,
NRVBA2H100T3G,
NRVBA2H100NT3G
MARKING
DIAGRAMS
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
•
•
•
•
•
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Overvoltage Protection
Low Forward Voltage Drop
NBR and NRVB Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable*
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 70 mg (SMA), 95 mg (SMB) (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings:
♦ Charged Device Model > 1000 V (Class C5)
♦ Human Body Model = 3B
These Devices are Pb−Free and are RoHS Compliant
Device Meets MSL1 Requirements
© Semiconductor Components Industries, LLC, 2012
January, 2022 − Rev. 14
A210
AYWWG
SMB
CASE 403A
AYWW
B210G
G
A210
= MBRA2H100T3G
NRVBA2H100T3G
B210
= MBRS2H100T3G
NBRS2H100T3G
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
Mechanical Characteristics
•
•
•
•
•
SMA
CASE 403D
1
Package
Shipping†
SMA
(Pb−Free)
5,000 /
Tape & Reel
MBRS2H100T3G,
SMB
NBRS2H100T3G*
(Pb−Free)
NBRS2H100NT3G*,
NBRS2H100T3G−VF01*
2,500 /
Tape & Reel
SMA
(Pb−Free)
5,000 /
Tape & Reel
Device
MBRA2H100T3G,
NRVBA2H100T3G*
NRVBA2H100NT3G*
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
MBRS2H100/D
MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G,
NRVBA2H100T3G, NRVBA2H100NT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 150°C)
Symbol
Value
Unit
VRRM
VRWM
VR
100
V
IO
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
130
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Lead (Note 2)
MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G
MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G
YJCL
Thermal Resistance, Junction−to−Ambient (Note 2)
MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G
MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G
RqJA
Thermal Resistance, Junction−to−Ambient (Note 3)
MBRA2H100T3G, NRVBA2H100T3G, NRVBA2H100NT3G
MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G
RqJA
Value
14
12
75
71
275
230
Unit
°C/W
°C/W
°C/W
2. Mounted with 700 mm square copper pad size (Approximately 1 inch square) 1 oz FR4 Board.
3. Mounted with minimum recommended pad size 1 oz FR4 Board.
ELECTRICAL CHARACTERISTICS
Value
Characteristic
Symbol
Maximum Instantaneous Forward Voltage (Note 4)
(iF = 2.0 A)
vF
Maximum Instantaneous Reverse Current (Note 4)
(VR = 100 V)
IR
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
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2
TJ = 25°C
TJ = 125°C
0.79
0.65
0.008
1.5
Unit
V
mA
MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G,
NRVBA2H100T3G, NRVBA2H100NT3G
TYPICAL CHARACTERISTICS
100
150°C
25°C
125°C
10
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
1
0.1
0.2 0.3
0.4
0.5
0.6
0.7
0.8
1.0
0.9
1.1
150°C
0.3
0.5
0.9
1.1
1.3
1.5
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
10
150°C
125°C
0.1
0.01
0.001
25°C
0.0001
0
10
20
30
40
50
60
70
80
90
100
150°C
1
125°C
0.1
0.01
25°C
0.001
0
10
20
VR, REVERSE VOLTAGE (V)
30
40
50
60
80
70
90 100
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
4.0
400
TJ = 25°C
f = 1 MHz
350
300
250
200
150
100
50
0
10
20
30
40
50
60
70
80
90
IF(AV), AVERAGE FORWARD
CURRENT (A)
450
C, CAPACITANCE (pF)
0.7
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1
0
25°C
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
IR, REVERSE CURRENT (mA)
IR, REVERSE CURRENT (mA)
125°C
0.1
1.2
10
0.00001
10
3.0
Square Wave
2.0
1.0
0
100
RqJL = 14°C/W
dc
100
110
120
130
140
150
160
VR, REVERSE VOLTAGE (V)
TL, LEAD TEMPERATURE (°C)
Figure 5. Typical Capacitance
Figure 6. Current Derating − Lead
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3
170
MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G,
NRVBA2H100T3G, NRVBA2H100NT3G
4.0
RqJA = 71°C/W
dc
3.0
RqJA = 100°C/W
dc
2.0
Square Wave
1.0
0
0
20
40
60
80
100
120
140
160 175
PFO, AVERAGE POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
5
TJ = 175°C
4
Square Wave
3
dc
2
1
0
0
1
R(t) (C/W)
4
5
Figure 8. Maximum Forward Power Dissipation
Figure 7. Current Derating, Ambient
10
3
IO, AVERAGE FORWARD CURRENT (A)
TA, AMBIENT TEMPERATURE (°C)
100
2
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
1.0%
0.1
SINGLE PULSE
0.01
SMB Die X 1.8 mm Die Y 1.8 mm
PCB Cu Area 645.2 mm2 PCB Cu thk 1.0 oz
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
PULSE TIME (s)
Figure 9. Thermal Response, Junction−to−Ambient (1 inch pad) −
MBRS2H100T3G/NBRS2H100T3G/NBRS2H100NT3G
1000
50% (DUTY CYCLE)
R(t) (C/W)
100
10
1.0
20%
10%
5.0%
2.0%
1.0%
0.1
0.01
SMB Die X 1.8 mm Die Y 1.8 mm
PCB Cu Area 11.8 mm2 PCB Cu thk 1.0 oz
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
1.0
Figure 10. Thermal Response, Junction−to−Ambient (min pad) −
MBRS2H100T3G/NBRS2H100T3G/NBRS2H100NT3G
www.onsemi.com
4
10
100
1000
MBRS2H100T3G, NBRS2H100T3G, NBRS2H100NT3G, MBRA2H100T3G,
NRVBA2H100T3G, NRVBA2H100NT3G
TYPICAL CHARACTERISTICS
100
R(t) (C/W)
10
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0
1.0%
0.1
0.01
SINGLE PULSE
0.001
0.000001
0.0001
0.00001
0.001
0.01
1.0
0.1
10
100
1000
PULSE TIME (s)
Figure 11. Thermal Response, Junction−to−Ambient (1 inch pad) − MBRA2H100T3G/NRVBA2H100T3G
1000
50% (DUTY CYCLE)
10
1.0
20%
10%
5.0%
2.0%
1.0%
0.1
SINGLE PULSE
0.01
0.000001
0.0001
0.00001
0.001
0.01
1.0
0.1
10
100
PULSE TIME (s)
Figure 12. Thermal Response, Junction−to−Ambient (min pad) − MBRA2H100T3G/NRVBA2H100T3G
2.5
2.0 oz
Power Based on TA = 25°C
POWER DISSIPATION (W)
R(t) (C/W)
100
2.0
1.0 oz
1.5
1.0
0.5
0
0
100
200
300
400
500
600
700
COPPER AREA (sq mm)
Figure 13. PD, Junction−to−Ambient (URS copper area)
www.onsemi.com
5
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
SCALE 1:1
DATE 19 JUL 2012
SCALE 1:1
Polarity Band
Non−Polarity Band
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
A
L
L1
c
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
GENERIC
MARKING DIAGRAM*
A1
SOLDERING FOOTPRINT*
2.261
0.089
AYWW
XXXXXG
G
AYWW
XXXXXG
G
Polarity Band
Non−Polarity Band
XXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
2.743
0.108
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42669B
SMB
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
STYLE 1
SMA
CASE 403D
ISSUE J
STYLE 2
SCALE 1:1
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
DATE 22 OCT 2021
STYLE 2:
NO POLARITY
GENERIC
MARKING DIAGRAM*
xxxx
AYWWG
STYLE 1
xxxx
A
Y
WW
G
xxxx
AYWWG
STYLE 2
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04079D
SMA
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
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