NRVBAF360T3G

MBRAF360T3G, NRVBAF360T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. Features • • • • • • • www.onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 60 VOLTS Low Profile Package for Space Constrained Applications Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction 150°C Operating Junction Temperature Guard−Ring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAM Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • • • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Cathode Polarity Band Device Meets MSL 1 Requirements ESD Ratings: Machine Model = C ESD Ratings: Human Body Model = 3B RAH AYWWG RAH A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device Package Shipping† MBRAF360T3G SMA−FL (Pb−Free) 5000 / Tape & Reel NRVBAF360T3G SMA−FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 December, 2016 − Rev. 3 1 Publication Order Number: MBRAF360/D MBRAF360T3G, NRVBAF360T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 60 V Average Rectified Forward Current IF(AV) 3.0 @ TL = 100°C 4.0 @ TL = 80°C A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 125°C IFRM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Storage Temperature Range Tstg − 65 to +150 °C Operating Junction Temperature (Note 1) TJ − 65 to +150 °C A 6 A 125 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) Characteristic RqJL 25 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 90 °C/W Symbol Value Unit 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 3) (iF = 3.0 A, TJ = 25°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 100°C) iR V 0.63 mA 0.03 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. 10 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) 10 TJ = 150°C TJ = 175°C 1 TJ = 100°C TJ = 25°C 0.1 0.01 TJ = −40°C 0.0 0.2 0.4 0.6 TJ = 175°C 1 TJ = 150°C TJ = 25°C 0.01 0.8 TJ = 100°C 0.1 TJ = −40°C 0.0 0.2 0.4 0.6 0.8 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 MBRAF360T3G, NRVBAF360T3G IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 1.0E−01 TJ = 175°C 1.0E−02 TJ = 150°C 1.0E−03 TJ = 100°C 1.0E−04 1.0E−05 TJ = 25°C 1.0E−06 1.0E−07 0 10 20 30 40 50 VR, INSTANTANEOUS REVERSE VOLTAGE (V) 60 Figure 3. Typical Reverse Current 1.0E−01 TJ = 175°C TJ = 150°C 1.0E−02 TJ = 100°C 1.0E−03 1.0E−04 TJ = 25°C 1.0E−05 1.0E−06 0 10 20 30 40 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 4. Maximum Reverse Current 1000 TJ = 25°C C, CAPACITANCE (pF) IR, INSTANTANEOUS REVERSE CURRENT (A) 1.0E+00 100 10 0 10 20 40 30 50 VR, REVERSE VOLTAGE (V) Figure 5. Typical Capacitance www.onsemi.com 3 60 70 R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) MBRAF360T3G, NRVBAF360T3G 100 50% Duty Cycle 10 20% 10% 5% 2% 1 1% 0.1 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 6. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O DATE 02 MAR 2011 SCALE 2:1 E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c 2X C SIDE VIEW MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 SEATING PLANE b 2X L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 5.56 1.76 1.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON55210E SMA−FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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