NRVBD1035CTL

NRVBD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features http://onsemi.com • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection • Matched Dual Die Construction − • • • • • SCHOTTKY BARRIER RECTIFIER 10 AMPERES 35 VOLTS 1 4 3 May be Paralleled for High Current Output High dv/dt Capability Short Heat Sink Tap Manufactured − Not Sheared Very Low Forward Voltage Drop Epoxy Meets UL 94 V−0 @ 0.125 in This is a Pb−Free Device 4 12 3 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • DPAK CASE 369C Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MARKING DIAGRAM YWW B10 35CLG Y WW B1035CL G = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 June, 2011 − Rev. 0 1 Publication Order Number: NRVBD1035CTL/D NRVBD1035CTL MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115°C) Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115°C) Per Leg Per Package Per Leg Symbol VRRM VRWM VR IO IFRM IFSM Tstg, Tc TJ dv/dt Value 35 Unit V 5.0 10 10 50 −55 to +150 −55 to +150 10,000 A A A °C °C V/ms Non−Repetitive Peak Surge Current Per Package (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Thermal Resistance, Junction−to−Ambient (Note 2) Per Leg Per Leg RqJC RqJA 3.0 137 °C/W °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (See Figure 2) IF = 5 Amps, TJ = 25°C IF = 5 Amps, TJ = 100°C IF = 10 Amps, TJ = 25°C IF = 10 Amps, TJ = 100°C Maximum Instantaneous Reverse Current (Note 3) (See Figure 4) (VR = 35 V, TJ = 25°C) (VR = 35 V, TJ = 100°C) (VR = 17.5 V, TJ = 25°C) (VR = 17.5 V, TJ = 100°C) Per Leg VF 0.47 0.41 0.56 0.55 IR 2.0 30 0.20 5.0 mA V Per Leg 2. Rating applies when using minimum pad size, FR4 PC Board 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device NRVBD1035CTLT4G Package DPAK (Pb−Free) Shipping† 2500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NRVBD1035CTL TYPICAL CHARACTERISTICS I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 I F, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 TJ = 125°C 10 TJ = 100°C TJ = 25°C 1.0 TJ = - 40°C 10 TJ = 125°C 1.0 TJ = 25°C TJ = 100°C 0.1 0.10 0.30 0.50 0.70 0.90 1.10 0.1 0.10 0.30 0.50 0.70 0.90 1.10 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Leg Figure 2. Maximum Forward Voltage Per Leg 100E-3 TJ = 125°C 10E-3 1E-3 TJ = 100°C TJ = 25°C I R , MAXIMUM REVERSE CURRENT (AMPS) 1E+0 I R , REVERSE CURRENT (AMPS) 1E+0 100E-3 10E-3 1E-3 TJ = 125°C TJ = 100°C 100E-6 10E-6 1E-6 100E-6 TJ = 25°C 10E-6 1E-6 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 35 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 35 Figure 3. Typical Reverse Current Per Leg Figure 4. Maximum Reverse Current Per Leg http://onsemi.com 3 NRVBD1035CTL I O , AVERAGE FORWARD CURRENT (AMPS) 8.0 dc 7.0 6.0 5.0 4.0 Ipk/Io = 5 3.0 2.0 1.0 freq = 20 kHz 0 0 20 40 60 80 100 120 140 TL, LEAD TEMPERATURE (°C) Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE (50% DUTY CYCLE) Ipk/Io = p PFO , AVERAGE POWER DISSIPATION (WATTS) 4.0 3.5 3.0 2.5 Ipk/Io = 5 2.0 1.5 1.0 0.5 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 IO, AVERAGE FORWARD CURRENT (AMPS) Ipk/Io = 10 Ipk/Io = 20 SQUARE WAVE (50% DUTY CYCLE) Ipk/Io = p dc Figure 5. Current Derating Per Leg Figure 6. Forward Power Dissipation Per Leg TJ , DERATED OPERATING TEMPERATURE ( ° C) 1000 TJ = 25°C 125 115 RqJA = 2.43°C/W RqJA = 25°C/W C, CAPACITANCE (pF) 105 95 RqJA = 48°C/W RqJA = 67.5°C/W 100 85 75 65 0 5 10 15 20 25 30 35 VR, DC REVERSE VOLTAGE (VOLTS) RqJA = 84°C/W 10 0 5 10 15 20 25 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance Per Leg Figure 8. Typical Operating Temperature Derating Per Leg * * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ = TJmax − r(t)(Pf + Pr) where TJ may be calculated from the equation: r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. http://onsemi.com 4 NRVBD1035CTL r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 50%(DUTY CYCLE) 20% 10% 0.1 5.0% 2.0% 1.0% SINGLE PULSE 0.01 0.00001 Rtjl(t) = Rtjl • r(t) 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 9. Thermal Response Junction to Case (Per Leg) r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0E+00 50% (DUTY CYCLE) 20% 1.0E-01 10% 5.0% 2.0% 1.0% 1.0E-02 1.0E-03 SINGLE PULSE 1.0E-04 0.00001 Rtjl(t) = Rtjl • r(t) 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 10000 0.0001 Figure 10. Thermal Response Junction to Ambient (Per Leg) http://onsemi.com 5 NRVBD1035CTL PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE D A B C A c2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− E b3 L3 1 4 D 2 3 Z DETAIL A H L4 b2 e b 0.005 (0.13) M c C L2 GAUGE PLANE H C L L1 DETAIL A SEATING PLANE A1 ROTATED 90 CW 5 SOLDERING FOOTPRINT* 6.20 0.244 3.00 0.118 2.58 0.102 5.80 0.228 1.60 0.063 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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