NRVBD1035CTLT4G

NRVBD1035CTL Switch-mode Schottky Power Rectifier DPAK Power Surface Mount Package The NRVBD1035CTL employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies, free wheeling diode and polarity protection diodes. Features • Highly Stable Oxide Passivated Junction • Guardring for Stress Protection • Matched Dual Die Construction − • • • • • www.onsemi.com SCHOTTKY BARRIER RECTIFIER 10 AMPERES 35 VOLTS 1 4 May be Paralleled for High Current Output High dv/dt Capability Short Heat Sink Tap Manufactured − Not Sheared Very Low Forward Voltage Drop Epoxy Meets UL 94 V−0 @ 0.125 in This is a Pb−Free Device 3 4 1 2 Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 0.4 Gram (Approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds 3 DPAK CASE 369C MARKING DIAGRAM AYWW B10 35CLG A Y WW B1035CL G = Assembly Location = Year = Work Week = Device Code = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 July, 2019 − Rev. 1 1 Publication Order Number: NRVBD1035CTL/D NRVBD1035CTL MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 115°C) Per Leg Per Package Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 115°C) Per Leg Non−Repetitive Peak Surge Current Per Package (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) Storage / Operating Case Temperature Operating Junction Temperature (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) Symbol Value Unit VRRM VRWM VR 35 V IO 5.0 10 A IFRM 10 A IFSM 50 A Tstg, Tc −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Thermal Resistance, Junction−to−Case Per Leg RqJC 3.0 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) Per Leg RqJA 137 °C/W ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (See Figure 2) IF = 5 Amps, TJ = 25°C IF = 5 Amps, TJ = 100°C IF = 10 Amps, TJ = 25°C IF = 10 Amps, TJ = 100°C Maximum Instantaneous Reverse Current (Note 3) (See Figure 4) (VR = 35 V, TJ = 25°C) (VR = 35 V, TJ = 100°C) (VR = 17.5 V, TJ = 25°C) (VR = 17.5 V, TJ = 100°C) Per Leg Per Leg VF V 0.47 0.41 0.56 0.55 IR mA 2.0 30 0.20 5.0 2. Rating applies when using minimum pad size, FR4 PC Board 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device NRVBD1035CTLT4G Package Shipping† DPAK (Pb−Free) 2500 Units / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 NRVBD1035CTL I F, INSTANTANEOUS FORWARD CURRENT (AMPS) I F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 100 TJ = 125°C 10 TJ = 100°C TJ = 25°C TJ = - 40°C 1.0 0.1 0.10 0.30 0.50 0.70 0.90 1.10 100 TJ = 125°C 10 TJ = 25°C 1.0 TJ = 100°C 0.1 0.10 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Per Leg I R , MAXIMUM REVERSE CURRENT (AMPS) I R , REVERSE CURRENT (AMPS) 0.50 0.70 0.90 1.10 Figure 2. Maximum Forward Voltage Per Leg 1E+0 100E-3 1E+0 100E-3 TJ = 125°C 10E-3 1E-3 TJ = 100°C 100E-6 TJ = 25°C 0 10 20 VR, REVERSE VOLTAGE (VOLTS) TJ = 125°C 10E-3 TJ = 100°C 1E-3 100E-6 10E-6 1E-6 0.30 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 30 35 Figure 3. Typical Reverse Current Per Leg TJ = 25°C 10E-6 1E-6 0 10 20 VR, REVERSE VOLTAGE (VOLTS) 30 Figure 4. Maximum Reverse Current Per Leg www.onsemi.com 3 35 PFO , AVERAGE POWER DISSIPATION (WATTS) I O , AVERAGE FORWARD CURRENT (AMPS) NRVBD1035CTL 8.0 dc 7.0 SQUARE WAVE (50% DUTY CYCLE) 6.0 5.0 Ipk/Io = p 4.0 Ipk/Io = 5 3.0 Ipk/Io = 10 2.0 Ipk/Io = 20 1.0 freq = 20 kHz 0 0 20 40 60 80 120 100 4.0 SQUARE WAVE (50% DUTY CYCLE) 3.5 3.0 Ipk/Io = p 2.5 Ipk/Io = 5 2.0 Ipk/Io = 10 1.5 Ipk/Io = 20 1.0 0.5 0 0 140 1.0 1000 C, CAPACITANCE (pF) TJ = 25°C 100 10 10 15 3.0 4.0 5.0 6.0 7.0 8.0 Figure 6. Forward Power Dissipation Per Leg TJ , DERATED OPERATING TEMPERATURE ( ° C) Figure 5. Current Derating Per Leg 5 2.0 IO, AVERAGE FORWARD CURRENT (AMPS) TL, LEAD TEMPERATURE (°C) 0 dc 20 125 RqJA = 2.43°C/W 115 RqJA = 25°C/W 105 RqJA = 48°C/W 95 RqJA = 67.5°C/W 85 RqJA = 84°C/W 75 65 0 25 5 10 15 20 25 30 35 VR, DC REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 8. Typical Operating Temperature Derating Per Leg * Figure 7. Capacitance Per Leg * Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating TJ may be calculated from the equation: TJ = TJmax − r(t)(Pf + Pr) where r(t) = thermal impedance under given conditions, Pf = forward power dissipation, and Pr = reverse power dissipation This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr, where r(t) = Rthja. For other power applications further calculations must be performed. www.onsemi.com 4 r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) NRVBD1035CTL 1.0 50%(DUTY CYCLE) 20% 10% 0.1 5.0% 2.0% 1.0% SINGLE PULSE 0.01 0.00001 Rtjl(t) = Rtjl • r(t) 0.0001 0.001 0.01 0.1 10 1.0 100 1000 t, TIME (s) r (t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 9. Thermal Response Junction to Case (Per Leg) 1.0E+00 50% (DUTY CYCLE) 20% 1.0E-01 1.0E-02 10% 5.0% 2.0% 1.0% 1.0E-03 SINGLE PULSE 1.0E-04 0.00001 0.0001 Rtjl(t) = Rtjl • r(t) 0.001 0.01 0.1 1.0 10 t, TIME (s) Figure 10. Thermal Response Junction to Ambient (Per Leg) www.onsemi.com 5 100 1000 10000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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