MBRM130LT1G,
NRVBM130LT1G,
MBRM130LT3G,
NRVBM130LT3G
Surface Mount
Schottky Power Rectifier
POWERMITE
Power Surface Mount Package
The SchottkyPOWERMITE employs the Schottky Barrier
principle with a barrier metal and epitaxial construction that produces
optimal forward voltage drop−reverse current tradeoff. The advanced
packaging techniques provide for a highly efficient micro miniature,
space saving surface mount Rectifier. With its unique heatsink design,
thePOWERMITE has the same thermal performance as the SMA
while being 50% smaller in footprint area, and delivering one of the
lowest height profiles, 1.1 mm in the industry. Because of its small
size, it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are AC−DC and
DC−DC converters, reverse battery protection, and “ORing” of
multiple supply voltages and any other application where performance
and size are critical.
Features
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES, 30 VOLTS
ANODE
CATHODE
POWERMITE
CASE 457
PLASTIC
MARKING DIAGRAM
1
Low Profile − Maximum Height of 1.1 mm
Small Footprint − Footprint Area of 8.45 mm2
Low VF Provides Higher Efficiency and Extends Battery Life
Supplied in 12 mm Tape and Reel
Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
ESD Ratings:
Human Body Model = 3B (> 16 kV)
Machine Model = C (> 400 V)
AEC−Q101 Qualified and PPAP Capable
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
All Packages are Pb−Free*
Mechanical Characteristics:
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POWERMITE is JEDEC Registered as D0−216AA
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 16.3 mg (Approximately)
Lead and Mounting Surface Temperature for Soldering Purposes:
260C Maximum for 10 Seconds
M
BCGG
2
M
= Date Code
BCG = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
MBRM130LT1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
NRVBM130LT1G
POWERMITE
(Pb−Free)
3,000 /
Tape & Reel
MBRM130LT3G
POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
NRVBM130LT3G
POWERMITE
(Pb−Free)
12,000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
January, 2012 − Rev. 5
1
Publication Order Number:
MBRM130L/D
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TC = 135C)
Symbol
Value
Unit
VRRM
VRWM
VR
30
V
IO
A
1.0
Peak Repetitive Forward Current
(At Rated VR, Square Wave, 100 kHz, TC = 135C)
IFRM
Non−Repetitive Peak Surge Current
(Non−Repetitive peak surge current, halfwave, single phase, 60 Hz)
IFSM
Storage Temperature
Tstg
−55 to 150
C
Operating Junction Temperature
TJ
−55 to 125
C
Voltage Rate of Change
(Rated VR, TJ = 25C)
A
2.0
A
50
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Anode) (Note 1)
Thermal Resistance, Junction−to−Tab (Cathode) (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 1)
Symbol
Value
Unit
Rtjl
Rtjtab
Rtja
35
23
277
C/W
1. Mounted with minimum recommended pad size, PC Board FR4, See Figures 9 & 10
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
VF
Maximum Instantaneous Forward Voltage (Note 2), See Figure 2
(IF = 0.1 A)
(IF = 1.0 A)
(IF = 3.0 A)
IR
Maximum Instantaneous Reverse Current (Note 2), See Figure 4
(VR = 30 V)
(VR = 20 V)
(VR = 10 V)
Unit
TJ = 25C
TJ = 85C
0.30
0.38
0.52
0.20
0.33
0.50
TJ = 25C
TJ = 85C
0.41
0.13
0.05
11
5.3
3.2
V
mA
10
TJ = 150C
TJ = 125C
1.0
TJ = 85C
TJ = 25C
TJ = −40C
0.1
0
0.1
0.2
0.3
0.4
0.6
0.5
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
IF, INSTANTANEOUS FORWARD CURRENT (AMPS)
iF, INSTANTANEOUS FORWARD CURRENT (AMPS)
2. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%
10
TJ = 150C
1.0
TJ = 125C
TJ = 85C
TJ = 25C
TJ = −40C
0.1
0
0.1
0.2
0.3
0.4
0.5
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE
(VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
0.6
100E−3
IR, REVERSE CURRENT (AMPS)
10E−3
TJ = 85C
1.0E−3
100E−6
TJ = 25C
10E−3
TJ = 85C
1.0E−3
100E−6
10E−6
1.0E−6
IR, MAXIMUM REVERSE CURRENT (AMPS)
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
25
5.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
0
30
10E−6
TJ = 25C
0
1.8
dc
1.6
FREQ = 20 kHz
1.4
SQUARE WAVE
1.2
1.0
Ipk/Io = p
0.8
Ipk/Io = 5
0.6
Ipk/Io = 10
0.4
Ipk/Io = 20
0.2
0
25
35
45
85 95 105 115 125
55 65 75
TL, LEAD TEMPERATURE (C)
TJ, DERATED OPERATING TEMPERATURE (_C)
Figure 5. Current Derating
C, CAPACITANCE (pF)
1000
TJ = 25C
100
10
0
5.0
20
25
10
15
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 4. Maximum Reverse Current
PFO, AVERAGE POWER DISSIPATION (WATTS)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Typical Reverse Current
25
5.0
10
15
20
VR, REVERSE VOLTAGE (VOLTS)
30
Figure 7. Capacitance
0.7
0.6
Ipk/Io = 5
0.5
Ipk/Io = p
SQUARE
WAVE
dc
Ipk/Io = 10
0.4
Ipk/Io = 20
0.3
0.2
0.1
0
150
140
130
120
110
100
90
80
70
60
50
40
30
20
0
0.2
0.6
1.4
0.4
0.8
1.0
1.2
IO, AVERAGE FORWARD CURRENT (AMPS)
1.6
Figure 6. Forward Power Dissipation
Rtja = 10C/W
15C/W
20C/W
25C/W
35C/W
0
25
15
5.0
10
20
VR, DC REVERSE VOLTAGE (VOLTS)
30
Figure 8. Typical Operating Temperature Derating*
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any reverse voltage conditions. Calculations of TJ therefore must include forward and reverse power effects. The allowable operating
TJ = TJmax − r(t)(Pf + Pr) where
TJ may be calculated from the equation:
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable TJ due to reverse bias under DC conditions only and is calculated as TJ = TJmax − r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
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3
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
R(T), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
MBRM130LT1G, NRVBM130LT1G, MBRM130LT3G, NRVBM130LT3G
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
1.0%
0.001
0.00001
Rtjl(t) = Rtjl*r(t)
0.0001
0.001
0.01
0.1
1.0
10
100
T, TIME (s)
Figure 9. Thermal Response Junction to Lead
1.0
50%
0.1
20%
10%
5.0%
0.01
2.0%
Rtjl(t) = Rtjl*r(t)
1.0%
0.001
0.00001
0.0001
0.001
0.01
0.1
1.0
T, TIME (s)
Figure 10. Thermal Response Junction to Ambient
POWERMITE is a registered trademark of and used under a license from Microsemi Corporation.
http://onsemi.com
4
10
100
1,000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
POWERMITE
CASE 457
ISSUE G
DATE 12 JAN 2022
SCALE 4:1
GENERIC
MARKING DIAGRAMS*
1
M
XXXG
2
1
STYLE 1
1
M
XXXG
2
STYLE 2
M
XXXG
2
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
STYLE 3
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 1:
PIN 1. CATHODE
2. ANODE
98ASB14853C
POWERMITE
STYLE 2:
PIN 1. ANODE OR CATHODE
2. CATHODE OR ANODE
(BI−DIRECTIONAL)
STYLE 3:
PIN 1. ANODE
2. CATHODE
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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