NRVBS240LT3G

Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package MBRS240LT3G, NRVBS240LT3G, NRVBS240LN www.onsemi.com These devices employ the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency switching power supplies; free wheeling diodes and polarity protection diodes. SCHOTTKY BARRIER RECTIFIER 2.0 AMPERES, 40 VOLTS Features • • • • • • • Compact Package with J−Bend Leads Ideal for Automated Handling Highly Stable Oxide Passivated Junction Guard−Ring for Overvoltage Protection Low Forward Voltage Drop ESD Ratings: ♦ Human Body Model = 3B (> 16000 V) ♦ Machine Model = C (> 400 V) NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices Mechanical Characteristics • • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Cathode Polarity Band Maximum Temperature of 260°C/10 Seconds for Soldering Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable SMB CASE 403A MARKING DIAGRAM AYWW 2BL4G G 2BL4 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRS240LT3G SMB (Pb−Free) 2,500 / Tape & Reel NRVBS240LT3G* SMB (Pb−Free) 2,500 / Tape & Reel NRVBS240LNT3G* SMB (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2013 January, 2020 − Rev. 9 1 Publication Order Number: MBRS240LT3/D MBRS240LT3G, NRVBS240LT3G, NRVBS240LN MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (At Rated VR, TC = 100°C) Symbol Value Unit VRRM VRWM VR 40 V IO Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 105°C) IFRM Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Operating Junction Temperature Voltage Rate of Change (Rated VR, TJ = 25°C) 2.0 4.0 25 A A A Tstg, TC −55 to +150 °C TJ −55 to +150 °C dv/dt 10,000 V/ms Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) Symbol Value Unit RqJL RqJA 18 78 °C/W 1. Mounted with minimum recommended pad size, PC Board FR4. 2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 3) see Figure 2 (IF = 2.0 A) (IF = 4.0 A) VF Maximum Instantaneous Reverse Current (Note 3) see Figure 4 (VR = 40 V) (VR = 20 V) IR Value Unit TJ = 25°C TJ = 125°C 0.43 0.54 0.375 0.55 TJ = 25°C TJ = 100°C 2.0 0.5 60 40 V mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBRS240LT3G, NRVBS240LT3G, NRVBS240LN i F, INSTANTANEOUS FORWARD CURRENT (AMPS) i F, INSTANTANEOUS FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 10 1 TJ = 125°C 25°C 85°C -40°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 TJ = 125°C 85°C 25°C -40°C 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 0.8 100E-3 IR , MAXIMUM REVERSE CURRENT (AMPS) IR , REVERSE CURRENT (AMPS) 1 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 100E-3 TJ = 125°C 10E-3 85°C 1.0E-3 100°C 10E-3 1.0E-3 25°C 100E-6 100E-6 25°C 10E-6 10 10E-6 0 10 20 30 40 0 10 20 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current www.onsemi.com 3 40 MBRS240LT3G, NRVBS240LT3G, NRVBS240LN PFO , AVERAGE POWER DISSIPATION (WATTS) IO , AVERAGE FORWARD CURRENT (AMPS) TYPICAL CHARACTERISTICS 3.5 3.0 Freq = 20 kHz RqJL = 18°C/W dc 2.5 2.0 SQUARE WAVE 1.5 1.0 0.5 0 100 110 130 120 140 1.6 dc 1.4 SQUARE WAVE Ipk/Io = p 1.2 Ipk/Io = 5.0 1.0 Ipk/Io = 10 0.8 Ipk/Io = 20 0.6 0.4 0.2 0 0 150 0.5 1.0 2.0 1.5 2.5 3.0 TL, LEAD TEMPERATURE (°C) IO, AVERAGE FORWARD CURRENT (AMPS) Figure 5. Current Derating Figure 6. Forward Power Dissipation 3.5 1000 1000 SURGE CURRENT (AMPS) C, CAPACITANCE (pF) TJ = 25°C 100 10 100 1.0 R T, TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0 1.0E+00 1.0E-01 1.0E-02 5.0 10 15 20 25 30 35 10 40 10 1.0 100 1000 VR, REVERSE VOLTAGE (VOLTS) PULSE WIDTH (mSEC) Figure 7. Capacitance Figure 8. Maximum Non−Repetitive Forward Surge Current 10000 50% 20% 10% 5.0% 2.0% 1.0% 1.0E-03 Rtjl(t) = Rtjl*r(t) 1.0E-04 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) Figure 9. Thermal Response www.onsemi.com 4 1.0 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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