NRVBS3200NT3G

DATA SHEET www.onsemi.com Surface Mount Schottky Power Rectifier MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G SCHOTTKY BARRIER RECTIFIER 3.0 AMPERE 200 VOLTS This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system. SMB CASE 403A MARKING DIAGRAM AYWW B320G G Features • • • • • • • • Small Compact Surface Mountable Package with J−Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very High Blocking Voltage − 200 V 175°C Operating Junction Temperature Guard−Ring for Stress Protection NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements: AEC−Q101 Qualified and PPAP Capable* These are Pb−Free Devices Mechanical Charactersistics • Case: Epoxy, Molded, Epoxy Meets UL 94, V−0 • Weight: 95 mg (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal B320 A Y WW G = Specific Device Code = Assembly Location** = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) **The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MBRS3200T3G SMB (Pb−Free) 2,500 / Tape & Reel • Lead and Mounting Surface Temperature for Soldering Purposes: NRVBS3200T3G* SMB (Pb−Free) 2,500 / Tape & Reel • Cathode Polarity Band • Device Meets MSL 1 Requirements • ESD Ratings: NRVBS3200NT3G* SMB (Pb−Free) 2,500 / Tape & Reel Device Leads are Readily Solderable 260°C Max. for 10 Seconds ♦ ♦ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Machine Model = A Human Body Model = 1C © Semiconductor Components Industries, LLC, 2013 August, 2022 − Rev. 9 1 Publication Order Number: MBRS3200T3/D MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Current (TL = 150 °C) IF(AV) 3.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Operating Junction Temperature TJ A 100 −65 to +175 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit RqJL RqJA 13 62 °C/W Thermal Resistance, Junction−to−Lead (Note 1) Thermal Resistance, Junction−to−Ambient (Note 2) ELECTRICAL CHARACTERISTICS Maximum Instantaneous Forward Voltage (Note 3) (IF = 3.0 A, TJ = 25°C) (IF = 4.0 A, TJ = 25°C) (IF = 3.0 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 150°C) IR V 0.84 0.86 0.59 1.0 5.0 mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Minimum pad size (0.108 × 0.085 inch) for each lead on FR4 board. 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. 3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. TA = 150°C 10 TA = 175°C TA = 25°C 1 0.1 100 TA = 100°C IF, FORWARD CURRENT (A) IF, FORWARD CURRENT (A) 100 TA = 100°C TA = 175°C 10 TA = 25°C 1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 TA = 150°C 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 VF, FORWARD VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage www.onsemi.com 2 MBRS3200T3G, NRVBS3200T3G, NRVBS3200NT3G 1.0E−02 1.0E−02 TA = 175°C 1.0E−03 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) 1.0E−03 TA = 150°C 1.0E−04 1.0E−04 1.0E−05 TA = 100°C 1.0E−05 1.0E−07 1.0E−09 0 TA = 100°C 1.0E−06 1.0E−06 1.0E−08 TA = 175°C TA = 150°C 1.0E−07 TA = 25°C 20 40 TA = 25°C 1.0E−08 60 80 100 120 140 160 180 200 1.0E−09 0 20 Figure 3. Typical Reverse Current IF, AVERAGE FORWARD CURRENT (A) Typical Capacitance at 0 V = 209 V 100 0 20 40 60 80 100 120 140 160 180 200 100 120 140 160 180 200 SQUARE WAVE 4 3 2 1 0 80 90 100 110 120 130 140 150 160 170 180 Figure 5. Typical Capacitance Figure 6. Current Derating − Lead 5 4 SQUARE WAVE 3.5 dc 3 2.5 2 1.5 1 1 dc 5 TL, LEAD TEMPERATURE (°C) 4.5 0 RqJL = 13°C/W 6 VR, REVERSE VOLTAGE (V) IFSM, NON−REPETITIVE SURGE CURRENT (A) C, CAPACITANCE (pF) Pfo, AVERAGE POWER DISSIPATION (W) 80 7 TC = 25°C f = 1 MHz 0.5 0 60 Figure 4. Maximum Reverse Current 1000 10 40 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) 2 3 4 5 6 IO, AVERAGE FORWARD CURRENT (A) 900 800 700 *Typical performance based on a limited sample size, the rating is not guaranteed in the Maximum Ratings Table. 600 500 400 300 200 100 0 10 Figure 7. Forward Power Dissipation 100 1000 10000 TP, SQUARE WAVE PULSE DURATION (ms) Figure 8. Typical Non−repetitive Surge Current www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non−Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non−Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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