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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MBRS410L, NRVBS410L
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes, in surface mount
applications where compact size and weight are critical to the system.
Typical applications are AC−DC and DC−DC converters, reverse
battery protection, and “ORing” of multiple supply voltages and any
other application where performance and size are critical.
Features
•
•
•
•
•
•
•
•
•
•
Ultra Low VF
1st in the Market Place with a 10 VR Schottky Rectifier
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very Low Forward Voltage Drop
Excellent Ability to Withstand Reverse Avalanche Energy Transients
Guard−Ring for Stress Protection
NRVBS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 217 mg (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
•
•
•
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band on Plastic Body Indicates Cathode Lead
ESD Ratings:
Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
10
V
Average Rectified Forward Current
(@ TL = 110°C)
IO
4.0
A
IFSM
150
A
TJ
−65 to +125
°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
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SCHOTTKY BARRIER
RECTIFIERS
4.0 AMPERES, 10 VOLTS
SMC 2−LEAD
CASE 403AC
MARKING DIAGRAM
AYWW
B4L1G
G
B4L1
A
Y
WW
G
= Specific Device Code
= Assembly Location**
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
**The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly code
may be blank.
ORDERING INFORMATION
Package
Shipping†
MBRS410LT3G
SMC
(Pb−Free)
2500 / Tape & Reel
NRVBS410LT3G*
SMC
(Pb−Free)
2500 / Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
August, 2017 − Rev. 7
1
Publication Order Number:
MBRS410LT3/D
MBRS410L, NRVBS410L
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance,
Junction−to−Lead
Thermal Resistance,
Junction−to−Ambient
Min Pad (Note 2)
1 Inch Pad
RqJL
12
7.0
RqJA
109
59
VF
TJ = 25°C
TJ = 100°C
0.31
0.33
0.35
0.200
0.225
0.250
TJ = 25°C
TJ = 100°C
2.0
5.0
100
200
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(IF = 2.0 A)
(IF = 4.0 A)
(IF = 8.0 A)
Maximum Instantaneous Reverse Current (Note 1)
IR
(Rated dc Voltage, VR = 5.0 V)
(Rated dc Voltage, VR = 10 V)
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Mounted with Minimum Recommended Pad Size, PC Board FR4.
TYPICAL ELECTRICAL CHARACTERISTICS
100
IF, FORWARD CURRENT (A)
IF, FORWARD CURRENT (A)
100
VF @ 125°C
10
100°C
1
75°C
0.1
0
0.1
25°C
0.2
−40°C
0.3
0.4
10
VF @ 125°C
100°C
1
0.1
0.5
75°C
0
VF, INSTANTANEOUS VOLTAGE (V)
0.1
0.2
25°C
0.3
Figure 1. Typical Forward Voltage
0.5
Figure 2. Maximum Forward Voltage
10000
1.00E+00
f = 1 Mhz
IR, REVERSE CURRENT (A)
1.00E−01
C, CAPACITANCE (pF)
IR @ 125°C
100°C
75°C
1.00E−02
1.00E−03
1.00E−04
0.4
VF, INSTANTANEOUS VOLTAGE (V)
25°C
25°C
0
2
4
6
8
10
1000
0
2
4
6
8
VR, REVERSE VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
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2
10
MBRS410L, NRVBS410L
TYPICAL ELECTRICAL CHARACTERISTICS (continued)
IF, AVERAGE FORWARD
CURRENT (A)
8
7
PFO, AVERAGE POWER DISSIPATION (W)
9
dc
6
5
4
SQUARE WAVE
3
2
1
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
0
100
100
105
110
115
120
125
130
2
1.8
dc
1.6
1.4
1.2
1
0.8
SQUARE WAVE
0.6
0.4
0.2
0
0
1
2
3
4
5
6
7
8
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating (Junction−to−Lead)
Figure 6. Forward Power Dissipation
9
D = 0.5
0.2
10
0.1
0.05
1
0.02
0.01
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
100
1000
t, TIME (S)
R(t), TRANSIENT THERMAL RESISTANCE (°C/W)
Figure 7. Thermal Response, Junction−to−Ambient (min pad)
100
D = 0.5
10
0.2
0.1
0.05
1
0.02
0.01
SINGLE PULSE
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t, TIME (S)
Figure 8. Thermal Response, Junction−to−Ambient (1 inch pad)
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3
MBRS410L, NRVBS410L
PACKAGE DIMENSIONS
SMC 2−LEAD
CASE 403AC
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD
FLASH SHALL NOT EXCEED 0.254mm PER SIDE.
4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA
DETERMINED BY DIMENSION L.
HE
E
D
A1
DIM
A
A1
A2
b
c
D
E
HE
L
c J
DETAIL A
TOP VIEW
DETAIL A
A2
L
A
MILLIMETERS
MIN
MAX
1.95
2.61
0.05
0.20
1.90
2.41
2.90
3.20
0.15
0.41
5.55
6.25
6.60
7.15
7.75
8.15
0.75
1.60
INCHES
MIN
MAX
0.077
0.103
0.002
0.008
0.075
0.095
0.114
0.126
0.006
0.016
0.219
0.246
0.260
0.281
0.305
0.321
0.030
0.063
b
END VIEW
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
8.750
0.344
J
2X
3.790
0.149
2X
2.250
0.089
mm Ǔ
ǒinches
SCALE 4:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright
laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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For additional information, please contact your local
Sales Representative
MBRS410LT3/D