NRVHP820LFST1G

NRVHP820LFST1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-1023

  • 描述:

  • 数据手册
  • 价格&库存
NRVHP820LFST1G 数据手册
Switch-mode Power Rectifiers NHP820LFS, NRVHP820LFS This LFPAK ultrafast rectifier provides fast switching performance with soft recovery in a compact thermally efficient package. The LFPAK package provides an excellent alternative to the DPAK, offering thermal performance nearly as good in a package occupying less than half the board space. Its low profile makes it a good option for flat panel display and other applications with limited vertical clearance. The device offers low leakage over temperature making it a good match for applications requiring low quiescent current. Features www.onsemi.com ULTRAFAST RECTIFIERS 8 AMPERES 200 VOLTS • New Package Provides Capability of Inspection and Probe After Board Mounting • Low Forward Voltage Drop • 175°C Operating Junction Temperature • Excellent Ability to Absorb Stresses Associated with Power • • Temperature Cycling NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM C • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements Applications • Excellent Alternative to DPAK in Space−Constrained Automotive • • • Applications Very Low Leakage for Higher Temperature Operation Output Rectification in Compact Portable Consumer Applications Freewheeling Diode used with Inductive Loads © Semiconductor Components Industries, LLC, 2018 October, 2019 − Rev. 1 1 HP820L AWLYW LFPAK4 CASE 760AB 1 Mechanical Characteristics: • • • • 5 1,2,3,4 HP820L A WL Y W A A A A = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week ORDERING INFORMATION Device Package Shipping† NHP820LFST1G LFPAK4 (Pb−Free) 3000 / Tape & Reel NRVHP820LFST1G LFPAK4 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NHP820LFS/D NHP820LFS, NRVHP820LFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V 200 Average Rectified Forward Current (Rated VR, TC = 168°C) IF(AV) 8.0 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 158°C) IFRM 16 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 175 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) C5 Controlled Avalanche Energy (See Test Circuit in Figures 9 & 10) WAVAL 50 mJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient, Steady State (Assumes 645 mm2 2 oz. copper bond pad, on a FR4 board) RθJA 44 °C/W Thermal Resistance, Junction−to−Case, Steady State (Assumes 645 mm2 2 oz. copper bond pad, on a FR4 board) RθJC 1.07 °C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Note 1) (iF = 8 A, TJ = 125°C) (iF = 8 A, TJ = 25°C) vF Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 125°C) (Rated dc Voltage, TJ = 25°C) iR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms, VR = 30 V) Trr 0.88 1.00 100 1.0 35 V mA ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NHP820LFS, NRVHP820LFS TYPICAL CHARACTERISTICS 100 iF, INSTANTANEOUS FORWARD CURRENT (A) TA = 175°C TA = 150°C 10 TA = 125°C TA = 85°C 1 TA = 25°C IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 0.0 TA = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.2 0.4 0.6 0.8 1.0 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.4 1.E−01 1.E−04 1.E−02 TA = 175°C 1.E−05 1.E−05 TA = 85°C 1.E−08 TA = 25°C 1.E−09 1.E−11 0 20 40 60 80 100 120 140 160 180 200 1.E−07 TA = 25°C 1.E−08 TA = −55°C 1.E−09 0 20 40 60 80 100 120 140 160 180 200 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 100 IF(AV), AVERAGE FORWARD CURRENT (A) 1000 TJ = 25°C 100 10 0.1 TA = 85°C 1.E−06 TA = −55°C 1.E−10 TA = 150°C TA = 125°C 1.E−04 TA = 125°C 1.E−07 TA = 175°C 1.E−03 TA = 150°C 1.E−06 C, JUNCTION CAPACITANCE (pF) 10 0.1 0.0 1.4 1.E−03 1.E−12 TA = 175°C TA = 150°C IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 100 90 80 RqJC = 1.07°C/W TJ = 175°C DC 70 60 50 Square Wave (Duty = 0.5) 40 30 20 10 0 25 40 55 70 85 100 115 130 145 160 175 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating per Device www.onsemi.com 3 NHP820LFS, NRVHP820LFS TYPICAL CHARACTERISTICS 10 TJ = 175°C PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 9 8 7 6 Square Wave (Duty = 0.5) 5 4 DC 3 2 1 0 0 1 2 3 4 5 6 7 8 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 0.1 1% 0.01 Single Pulse 0.001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 PULSE TIME (sec) Figure 8. Typical Thermal Characteristics, Junction−to−Ambient www.onsemi.com 4 10 100 1000 NHP820LFS, NRVHP820LFS +VDD IL 40 mH COIL BVDUT VD MERCURY SWITCH ID ID IL DUT S1 VDD t0 Figure 9. Test Circuit t1 t2 t Figure 10. Current−Voltage Waveforms component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of the new “E’’ series Ultrafast rectifiers. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite EQUATION (1): ǒ BV 2 DUT W [ 1 LI LPK AVAL 2 BV –V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 www.onsemi.com 5 Ǔ MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS LFPAK4 5x6 CASE 760AB ISSUE C GENERIC MARKING DIAGRAM* XXXXXX XXXXXX AWLYW DOCUMENT NUMBER: DESCRIPTION: 98AON82777G LFPAK4 5x6 XXXXXX A WL Y W DATE 19 NOV 2019 = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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