NHPD660, NRVHPD660
Switch Mode
Power Rectifier
DPAK Surface Mount Package
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These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
•
•
•
•
•
•
•
Ultrafast 30 Nanosecond Recovery Time
175°C Operating Junction Temperature
High Voltage Capability of 600 V
Low Forward Drop
Low Leakage Specified @ 125°C Case Temperature
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PLANAR ULTRAFAST RECTIFIER
6.0 AMPERES, 600 VOLTS
DPAK
CASE 369C
1
4
3
Mechanical Characteristics
MARKING DIAGRAM
• Case: Epoxy, Molded
• Weight: 0.4 Gram (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
AYWW
NHP
D660T
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
•
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Applications
• Boost Rectifier for SMPS PFC Operating in Continuous Conduction
•
•
•
•
A
Y
WW
G
260°C Max. for 10 Seconds
ESD Ratings:
♦ Machine Model = C (> 400 V)
♦ Human Body Model = 3B (> 8 kV)
Mode (CCM)
LED Lighting Power Conversion
Automotive Diesel Piezo Injection
Thin and Ultra Thin Flat Panel Display
Output Rectification in High Frequency High Output Voltage
Applications
Package
Shipping†
NHPD660T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
16 mm
NRVHPD660T4G
DPAK
(Pb−Free)
2,500/Tape & Reel
16 mm
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy
and soldering details, please download the
ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 0
1
Publication Order Number:
NHPD660/D
NHPD660, NRVHPD660
MAXIMUM RATINGS
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
600
V
Average Rectified Forward Current
(Rated VR, TC = 145°C)
IF(AV)
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz, TC = 135°C)
IFRM
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, 60 Hz)
IFSM
A
6.0
A
12.0
A
60
Operating Junction and Storage Temperature Range
TJ, Tstg
°C
−65 to +175
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristics
Symbol
Value
Unit
Thermal Resistance − Junction−to−Case
RqJC
4.2
°C/W
Thermal Resistance − Junction−to−Ambient (Note 1)
RqJA
95.7
°C/W
1. Rating applies when surface mounted on the minimum pad sizes recommended.
ELECTRICAL CHARACTERISTICS
Test Conditions
Symbol
Typ
Max
Unit
Instantaneous Forward Voltage
(Note 2)
Characteristic
(iF = 6 A, TC = 125°C)
(iF = 6 A, TC = 25°C)
vF
1.45
2.4
1.8
3.0
V
Instantaneous Reverse Current
(Note 2)
(Rated DC Voltage, TC = 125°C)
(Rated DC Voltage, TC = 25°C)
iR
35
0.035
300
30
mA
Reverse Recovery Time
(IF = 0.5 A, Irr = 0.25 A, IR = 1 A)
(IF = 1 A, dIF/dt = −50 A/ms, VR = 30 V)
trr
−
−
30
50
ns
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
(IF = 6 A, dIF/dt = −200 A/ms, TC = 25°C)
trr
IRM
Qrr
S
30
2.3
37
2
50
3
50
−
ns
A
nC
−
Reverse Recovery Time
Peak Reverse Recovery Current
Total Reverse Recovery Charge
Softness Factor
(IF = 6 A, dIF/dt = −200 A/ms, TC = 125°C)
trr
IRM
Qrr
S
45
5.5
150
0.35
−
−
−
−
ns
A
nC
−
(IF = 6 A, dIF/dt = 120 A/ms, TC = 25°C)
tfr
VFP
−
−
200
6
ns
V
Forward Recovery Time
Forward Voltage Time
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NHPD660, NRVHPD660
TYPICAL CHARACTERISTICS
100
TA = 175°C
iF, INSTANTANEOUS FORWARD
CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
10
1
TA = 125°C
0.1
TA = 25°C
10
1
TA = 125°C
0.1
TA = 25°C
0.01
0.01
TA = −40°C
0.001
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
1.5
1.0
2.0
2.5
3.5
3.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
IR, INSTANTANEOUS REVERSE CURRENT (A)
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−02
1.E−02
TA = 175°C
1.E−03
1.E−03
1.E−04
1.E−04
TA = 125°C
1.E−05
TA = 175°C
1.E−05
TA = 150°C
1.E−06
1.E−07
TA = 125°C
TA = 150°C
TA = 25°C
1.E−06
TA = 25°C
1.E−08
1.E−07
TA = −40°C
1.E−09
1.E−08
1.E−10
1.E−09
1.E−11
1.E−12
0
100
200
300
400
500
600
1.E−10
TA = −40°C
0
100
200
300
400
500
600
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
TJ = 25°C
100
10
0
TA = −40°C
0.001
IF(AV), AVERAGE FORWARD CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
C, JUNCTION CAPACITANCE (pF)
TA = 175°C
TA = 150°C
20
40
60
80
100 120 140 160 180
200
12
11
DC
10
9
8
7
Square Wave
6
5
4
3
2
1
0
RqJC = 4.2°C/W
0
20
40
60
80
100
120
140
VR, REVERSE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
160 180
NHPD660, NRVHPD660
IPK/IAV
= 20
35
IPK/IAV = 10
Trr, REVERSE RECOVERY TIME (ns)
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
3.0
TJ = 175°C
35
Trr
30
2.5
IPK/IAV = 5
30
25
2.0
25
Vr = 30 V
di/dt = 50 A/ms
20
1.5
dc
20
15
1.0
Square Wave
0.5
0
0
0.5
1.0
1.5
2.0
15
Qrr
10
10
5
5
0
0
0
2
1
3
4
5
6
7
8
IF(AV), AVERAGE FORWARD CURRENT (A)
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
Figure 8. Typical Recovery Characteristics
Qrr, RECOVERED STORED CHARGE (ns)
TYPICAL CHARACTERISTICS
100
R(t) (C/W)
10
1
50% (DUTY CYCLE)
20%
10%
5.0%
2.0%
1.0%
0.1
0.01
SINGLE PULSE
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (s)
Figure 9. Thermal Response
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4
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
C
A
B
c2
4
L3
Z
D
1
L4
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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