NRVRGF1J

Fast Rectifiers RGF1A - RGF1M Features • • • • • • • • Glass Passivated Junction For Surface Mounted Applications Low Forward Voltage Drop High Current Capability Easy Pick and Place High Surge Current Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com SMA CASE 403AE MARKING DIAGRAM &Y&Z&3 RGF1x &Y &Z &3 RGF1x x = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Specific Device Code = A/B/D/G/J/K/M ORDERING INFORMATION Part Number Top Mark Package Shipping† RGF1A RGF1A SMA (Pb−Free) 7500 / Tape & Reel RGF1B SMA (Pb−Free) 7500 / Tape & Reel RGF1D SMA (Pb−Free) 7500 / Tape & Reel RGF1G SMA (Pb−Free) 7500 / Tape & Reel RGF1J SMA (Pb−Free) 7500 / Tape & Reel RGF1K SMA (Pb−Free) 7500 / Tape & Reel RGF1M SMA (Pb−Free) 7500 / Tape & Reel NRVRGF1A RGF1B NRVRGF1B RGF1D NRVRGF1D RGF1G NRVRGF1G RGF1J NRVRGF1J RGF1K NRVRGF1K RGF1M NRVRGF1M †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2020 February, 2021 − Rev. 2 1 Publication Order Number: RGF1M/D RGF1A − RGF1M SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Value Symbol Parameter RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit 50 100 200 400 600 800 1000 V VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current at TL = 125°C 1.0 A IFSM Non−Repetitive Peak Forward Surge Current: 8.3 ms Single Half−Sine Wave 30 A Operating Junction Temperature −65 to +175 °C Storage Temperature Range −65 to +175 °C TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol PD Parameter Power Dissipation Value Unit 1.76 W RqJA Junction−to−Ambient Thermal Resistance (Note 1) 85 °C/W RqJL Junction−to−Lead Thermal Resistance (Note 1) 28 °C/W 1. Device mounted on FR−4 PCB 0.013 mm. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Value Symbol Parameter Conditions VF Maximum Forward Voltage IF = 1.0 A trr Maximum Reverse Recovery Time IR Maximum Reverse Current at Rated VR CT Typical Capacitance RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M 1.3 IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 150 V 250 TA = 25°C 5.0 TA = 125°C 100 VR = 4.0 V, f = 1.0 MHz 8.5 Unit 500 ns mA pF Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 RGF1A − RGF1M 1.25 1 0.75 RESISTIVE OR INDUCTIVE LOAD P.C.B. MOUNTED ON 0.2 x 0.2" (5.0 x 5.0 mm) COPPER PAD AREAS 0.5 0.25 0 0 25 50 75 100 125 150 50 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] TYPICAL PERFORMANCE CHARACTERISTICS 175 40 30 20 10 0 1 2 Figure 1. Forward Current Derating Curve Reverse Current, IR [mA] Forward Current, IF [A] 20 50 100 30 10 TA = 125°C 1 TA = 25°C 0.1 Pulse Width = 300 ms 2% Duty Cycle 0.6 0.8 1 1.2 1.4 10 TA = 150°C 1 TA = 100°C 0.1 TA = 25°C 1.6 0.01 1.8 0 20 40 60 80 100 120 140 Forward Voltage, VF [V] Percent of Rated Peak Reverse Voltage [%] Figure 3. Forward Voltage Characteristics Figure 4. Reverse Current vs. Reverse Voltage 50 Total Capacitance, CT [pF] 10 Figure 2. Non−Repetitive Surge Current 20 0.01 0.4 5 Number of Cycles at 60 Hz Ambient Temperature [°C] 20 10 5 2 1 1 2 5 10 20 50 100 Reverse Voltage, VR [V] Figure 5. Total Capacitance www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA CASE 403AE ISSUE O B B 5.60 4.80 0.13 M C B DATE 31 AUG 2016 A 2.65 2.95 2.50 1.65 1.20 B 1.75 4.30 B A 4.75 4.00 LAND PATTERN RECOMMENDATION TOP VIEW 2.50 MAX A 2.20 1.90 B C 0.203 0.050 2.05 1.95 NOTES: 0.30 0.05 0.13 M C SIDE VIEW 8° 0° B A A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO214 VARIATION AC. B DOES NOT COMPLY JEDEC STANDARD VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSIONS AND TOLERANCE AS PER ASME Y14.5−2009. E. LAND PATTERN STD. DIOM5025X231M R0.15 4X GAGE PLANE 0.45 8° 0° 0.41 0.15 1.52 0.75 DETAIL A SCALE 20 : 1 DOCUMENT NUMBER: DESCRIPTION: 98AON13440G SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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