NRVTS12100EMFST3G

NTS12100EMFS, NRVTS12100EMFS Very Low Leakage Trench-based Schottky Rectifier http://onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices 5,6 1,2,3 MARKING DIAGRAM A 1 Typical Applications • Switching Power Supplies including Notebook / Netbook Adapters, • • • • • TRENCH SCHOTTKY RECTIFIERS 12 AMPERES 100 VOLTS ATX and Flat Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection LED Lighting Instrumentation A SO−8 FLAT LEAD CASE 488AA STYLE 2 TE1210 A Y W ZZ A C TE1210 AYWWZZ C Not Used = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability Mechanical Characteristics: • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements ORDERING INFORMATION Device Package Shipping† NTS12100EMFST1G, NRVTS12100EMFST1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTS12100EMFST3G, NRVTS12100EMFST3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 September, 2014 − Rev. 2 1 Publication Order Number: NTS12100EMFS/D NTS12100EMFS, NRVTS12100EMFS MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 Average Rectified Forward Current (Rated VR, TC = 163°C) IF(AV) 12 A Peak Repetitive Forward Current, (Rated VR, Square Wave, 20 kHz, TC = 160°C) IFRM 24 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 200 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C EAS 100 mJ Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive) V ESD Rating (Human Body Model) 3B ESD Rating (Machine Model) M4 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Symbol Typ Max Unit RθJC 2.0 − °C/W Symbol Typ Max Unit 0.52 0.65 − 0.73 0.46 0.57 − 0.64 1.3 5.0 − 55 mA mA 1.8 4.3 − 15 mA mA ELECTRICAL CHARACTERISTICS Characteristic Instantaneous Forward Voltage (Note 1) (iF = 5 A, TJ = 25°C) (iF = 12 A, TJ = 25°C) vF (iF = 5 A, TJ = 125°C) (iF = 12 A, TJ = 125°C) Instantaneous Reverse Current (Note 1) (VR = 70 V, TJ = 25°C) (Rated dc Voltage, TJ = 25°C) V iR (VR = 70 V, TJ = 125°C) (Rated dc Voltage, TJ = 125°C) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 NTS12100EMFS, NRVTS12100EMFS TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 10 TA = 125°C TA = 150°C TA = 25°C 1 TA = −55°C IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TA = 125°C TA = 25°C 1 TA = 150°C TA = −55°C 0.1 0.0 1.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E+00 1.E+00 1.E−01 TA = 175°C TA = 150°C TA = 125°C 1.E−02 1.E−01 TA = 175°C 1.E−02 TA = 150°C TA = 125°C 1.E−03 1.E−03 1.E−04 1.E−04 TA = 25°C 1.E−05 1.E−05 TA = 25°C 1.E−06 1.E−07 1.E−06 0 10 20 30 40 50 60 70 80 0 90 100 10 20 30 40 50 60 70 80 90 100 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 10k 25 RqJC = 2.0 °C/W TJ = 25°C IF(AV), AVERAGE FORWARD CURRENT (A) C, JUNCTION CAPACITANCE (pF) 10 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1k 100 0.1 1 10 100 20 DC 15 Square Wave 10 5 0 80 90 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating TO−220AB http://onsemi.com 3 170 NTS12100EMFS, NRVTS12100EMFS TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 20 IPK/IAV = 20 18 TJ = 175°C IPK/IAV = 10 16 14 IPK/IAV = 5 12 10 8 6 Square Wave 4 DC 2 0 0 1 2 3 4 5 6 7 9 8 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation 100 50% Duty Cycle R(t) (°C/W) 10 1 0.1 20% 10% 5% 2% 1% Assumes 25°C ambient and soldered to a 600 mm2 − oz copper pad on PCB Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 1 10 100 1000 PULSE TIME (sec) Figure 8. Thermal Characteristics 10 R(t) (°C/W) 1 50% Duty Cycle 20% 10% 0.1 5% 2% Single Pulse 1% 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 9. Typical Transient Thermal Response Characteristics, Junction−to−Case http://onsemi.com 4 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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