NRVTS2H60ESFT3G

DATA SHEET www.onsemi.com Very Low Forward Voltage Trench-based Schottky Rectifier TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 60 VOLTS NRVTS2H60ESF, NRVTSM260EV2 Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Mechanical Characteristics: • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 11.7 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds MSL 1 Typical Applications • Switching Power Supplies including Compact Adapters and Flat • • • • Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation © Semiconductor Components Industries, LLC, 2017 December, 2021 − Rev. 3 POWERMITE CASE 457 SOD−123FL CASE 498 MARKING DIAGRAMs 2H6MG G 2H6 M G 1 M 2H6G 2 = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device Package Shipping† NRVTS2H60ESFT1G SOD−123FL (Pb−Free) 3,000 / Tape & Reel NRVTS2H60ESFT3G SOD−123FL (Pb−Free) 10,000 / Tape & Reel NRVTSM260EV2T1G Powermite (Pb−Free) 3,000 / Tape & Reel NRVTSM260EV2T3G Powermite (Pb−Free) 12,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 Publication Order Number: NRVTS2H60ESF/D NRVTS2H60ESF, NRVTSM260EV2 MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V Average Rectified Forward Current (TL = 125°C) IO 2.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 139°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Tstg, TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Storage and Operating Junction Temperature Range (Note 1) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 24.4 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 85 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 330 °C/W Thermal Resistance, Junction−to−Lead (Note 2) YJCL 8.6 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 80 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 237 °C/W Symbol Value Unit SOD−123FL POWERMITE ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR 0.55 0.65 0.47 0.58 12 3 V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVTS2H60ESF, NRVTSM260EV2 TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C 10 TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 TA = 85°C TA = 25°C TA = −55°C 0.2 0.4 0.6 1.0 0.8 1.4 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.6 1.E−01 TA = 150°C 1.E−04 TA = 125°C 1.E−05 TA = 85°C 1.E−06 20 30 TA = 150°C 1.E−03 TA = 125°C 1.E−04 TA = 85°C 1.E−05 TA = 25°C 1.E−06 TA = 25°C 10 TA = 175°C 1.E−02 TA = 175°C 1.E−03 50 40 60 1.E−07 10 20 40 30 50 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−02 TJ = 25°C 100 10 TA = 150°C TA = 125°C 0.1 1.5 1.E−01 1.E−07 TA = 175°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 0.1 1 10 4 RqJL = 24.4°C/W DC 3 SQUARE WAVE 2 1 0 100 110 120 130 140 150 160 VR, REVERSE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 170 180 NRVTS2H60ESF, NRVTSM260EV2 PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 14 IPK/IAV = 20 IF(PK), PEAK FORWARD CURRENT (A) TYPICAL CHARACTERISTICS IPK/IAV = 10 12 10 8 6 IPK/IAV = 5 4 Square Wave DC 2 0 0 2 1 3 16 TJ = 175°C RqJA = 80°C/W Square Wave 14 12 D = 0.2 10 D = 0.3 8 6 D = 0.5 4 DC 2 0 25 40 IF(AV), AVERAGE FORWARD CURRENT (A) IF(PK), PEAK FORWARD CURRENT (A) 70 85 100 115 130 145 160 175 TA, AMBIENT TEMPERATURE (°C) Figure 7. Forward Power Dissipation 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 25 55 Figure 8. Forward Current Derating of Ambient Temperature TJ = 175°C YqJC = 8.6°C/W Square Wave (Duty = 0.5) DC 40 55 70 85 100 115 130 145 160 175 TC, CASE TEMPERATURE (°C) Figure 9. Forward Current Derating of Case Temperature 100 50% Duty Cycle R(t) (°C/W) 20% 10 10% 5% 2% 1 0.1 1% Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 t, PULSE TIME (s) Figure 10. Thermal Characteristics www.onsemi.com 4 1 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS POWERMITE CASE 457 ISSUE G DATE 12 JAN 2022 SCALE 4:1 GENERIC MARKING DIAGRAMS* 1 M XXXG 2 1 STYLE 1 1 M XXXG 2 STYLE 2 M XXXG 2 XXX = Specific Device Code M = Date Code G = Pb−Free Package STYLE 3 DOCUMENT NUMBER: DESCRIPTION: STYLE 1: PIN 1. CATHODE 2. ANODE 98ASB14853C POWERMITE STYLE 2: PIN 1. ANODE OR CATHODE 2. CATHODE OR ANODE (BI−DIRECTIONAL) STYLE 3: PIN 1. ANODE 2. CATHODE *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−123FL CASE 498 ISSUE D DATE 10 MAY 2013 SCALE 4:1 E D q 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH. 4. DIMENSIONS D AND J ARE TO BE MEASURED ON FLAT SECTION OF THE LEAD: BETWEEN 0.10 AND 0.25 MM FROM THE LEAD TIP. 2 POLARITY INDICATOR OPTIONAL AS NEEDED A END VIEW TOP VIEW q HE SIDE VIEW 2X b INCHES NOM 0.037 0.002 0.035 0.006 0.065 0.106 0.030 0.142 − MAX 0.039 0.004 0.043 0.008 0.071 0.114 0.037 0.150 8° (Note: Microdot may be in either location) 4.20 ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ MIN 0.035 0.000 0.028 0.004 0.059 0.098 0.022 0.134 0° XXX = Specific Device Code M = Date Code G = Pb−Free Package RECOMMENDED SOLDERING FOOTPRINT* 1.22 MILLIMETERS NOM MAX 0.95 0.98 0.05 0.10 0.90 1.10 0.15 0.20 1.65 1.80 2.70 2.90 0.75 0.95 3.60 3.80 8° − XXXMG G L BOTTOM VIEW 2X MIN 0.90 0.00 0.70 0.10 1.50 2.50 0.55 3.40 0° GENERIC MARKING DIAGRAM* c 2X A1 DIM A A1 b c D E L HE q *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2X ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ 1.25 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON11184D SOD−123FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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