NRVTSA4100ET3G

NRVTSA4100E Trench-Based Schottky Rectifier, Low Leakage Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 4 AMPERES 100 VOLTS MARKING DIAGRAMS Typical Applications SMA CASE 403D STYLE 1 • Switching Power Supplies including Wireless, Smartphone and • • • • • Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation LED Lighting TE41 A Y WW G • = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Mechanical Characteristics: • • • • TE41 AYWWG Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting SurfaceTemperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements ORDERING INFORMATION Device NRVTSA4100ET3G Package Shipping† SMA (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 October, 2018 − Rev. 1 1 Publication Order Number: NRVTSA4100E/D NRVTSA4100E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V 100 Average Rectified Forward Current (TL = 142°C) IF(AV) 4.0 A Peak Repetitive Forward Current, (Square Wave, 20 kHz, TL = 135°C) IFRM 8.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 150 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C ESD Rating (Human Body Model) 1B ESD Rating (Machine Model) M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Typ Max Unit Thermal Resistance, Junction−to−Lead, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Characteristic RθJL − 16.2 °C/W Thermal Resistance, Junction−to−Ambient, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJA − 90 °C/W 0.45 0.61 − 0.68 0.36 0.53 − 0.59 3.5 2.0 29 5.0 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 1.0 Amps, TJ = 25°C) (iF = 4.0 Amps, TJ = 25°C) vF (iF = 1.0 Amps, TJ = 125°C) (iF = 4.0 Amps, TJ = 125°C) Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd V mA mA pF 55 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVTSA4100E TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C 10 TA = 150°C TA = 125°C 1 TA = 25°C TA = −55°C 0 0.2 0.4 0.6 0.8 TA = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 TA = 175°C 1.E−03 1.E−04 TA = 85°C TA = 175°C 1.E−02 TA = 125°C TA = 150°C 1.E−03 TA = 125°C 1.E−04 TA = 85°C 1.E−05 1.E−05 TA = 25°C 1.E−06 20 30 40 50 60 TA = 25°C 1.E−06 70 80 1.E−07 90 100 10 20 30 40 50 60 70 80 90 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) TA = 25°C VF, INSTANTANEOUS FORWARD VOLTAGE (V) TA = 150°C TJ = 25°C 100 0.1 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−02 10 TA = 150°C TA = 125°C 0.1 1.0 1.E−01 1.E−07 10 TA = 175°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 100 8 7 DC 6 5 Square Wave 4 3 2 1 0 RqJL = 16.2°C/W 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, LEAD TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 160 100 NRVTSA4100E TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 8 7 IPK/IAV = 20 IPK/IAV = 10 IPK/IAV = 5 6 5 4 Square Wave 3 DC 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 1000 100 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 8. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS STYLE 1 SMA CASE 403D ISSUE J STYLE 2 SCALE 1:1 STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DATE 22 OCT 2021 STYLE 2: NO POLARITY GENERIC MARKING DIAGRAM* xxxx AYWWG STYLE 1 xxxx A Y WW G xxxx AYWWG STYLE 2 = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON04079D SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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