NTSA4100, NRVTSA4100
Low Forward Voltage, Low
Leakage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRVTSA Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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SCHOTTKY BARRIER
RECTIFIERS
4 AMPERES
100 VOLTS
MARKING
DIAGRAMS
SMA
CASE 403D
STYLE 1
Typical Applications
TH41
AYWWG
• Switching Power Supplies including Wireless, Smartphone and
•
•
•
•
•
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
TH41
A
Y
WW
G
(Note: Microdot may be in either location)
Mechanical Characteristics:
•
•
•
•
•
ORDERING INFORMATION
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting SurfaceTemperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
© Semiconductor Components Industries, LLC, 2015
October, 2015 − Rev. 2
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
Device
Package
Shipping†
NTSA4100T3G
SMA
(Pb−Free)
5000 /
Tape & Reel
NRVTSA4100T3G
SMA
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
Publication Order Number:
NTSA4100/D
NTSA4100, NRVTSA4100
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
100
Average Rectified Forward Current
(TL = 118°C)
IF(AV)
4.0
A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 110°C)
IFRM
8.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
50
A
Storage Temperature Range
Tstg
−65 to +150
°C
Operating Junction Temperature
TJ
−55 to +150
°C
ESD Rating (Human Body Model)
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Typ
Max
Unit
Thermal Resistance, Junction−to−Lead, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJL
−
16.2
°C/W
Thermal Resistance, Junction−to−Ambient, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
RθJA
−
90
°C/W
0.43
0.59
−
0.66
0.35
0.53
−
0.58
1.3
0.13
25
9
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 1.0 A, TJ = 25°C)
(iF = 4.0 A, TJ = 25°C)
vF
(iF = 1.0 A, TJ = 125°C)
(iF = 4.0 A, TJ = 125°C)
Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
V
mA
mA
pF
54.7
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NTSA4100, NRVTSA4100
TYPICAL CHARACTERISTICS
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
TA = 150°C
10
TA = 125°C
TA = 85°C
1
TA = 25°C
TA = −55°C
0.1
0.2
0.4
0.6
0.8
TA = 25°C
TA = −55°C
0
0.4
0.2
0.6
1.0
0.8
1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
TA = 150°C
1.E−03
TA = 125°C
1.E−03
TA = 85°C
TA = 85°C
1.E−04
1.E−05
TA = 25°C
1.E−06
TA = 150°C
1.E−02
TA = 125°C
1.E−04
1.E−05
TA = 25°C
1.E−06
20
30
40
50
60
70
80
90 100
10
20
40
30
50
60
70
80
90
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−02
TJ = 25°C
100
10
0.1
TA = 125°C
TA = 85°C
1.0
1.E−01
1.E−07
10
10
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0
TA = 150°C
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1
10
100
8
7
DC
6
5
Square Wave
4
3
2
RqJL = 16.2°C/W
1
0
0
20
40
60
80
100
120
VR, REVERSE VOLTAGE (V)
TC, LEAD TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating
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3
100
140
NTSA4100, NRVTSA4100
TYPICAL CHARACTERISTICS
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
8
7
IPK/IAV
= 20
IPK/IAV = 10
IPK/IAV = 5
6
5
4
Square Wave
3
DC
2
1
0
0
1
3
2
4
5
IF(AV), AVERAGE FORWARD CURRENT (A)
Figure 7. Forward Power Dissipation
R(t), TYPICAL TRANSIENT THERMAL
RESISTANCE (°C/W)
1000
100
10
1
50% Duty Cycle
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient
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4
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
STYLE 1
SMA
CASE 403D
ISSUE J
STYLE 2
SCALE 1:1
STYLE 1:
PIN 1. CATHODE (POLARITY BAND)
2. ANODE
DATE 22 OCT 2021
STYLE 2:
NO POLARITY
GENERIC
MARKING DIAGRAM*
xxxx
AYWWG
STYLE 1
xxxx
A
Y
WW
G
xxxx
AYWWG
STYLE 2
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON04079D
SMA
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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