NRVTSAF260ET3G

NRTSAF260E, NRVTSAF260E Very Low Forward Voltage Trench-based Schottky Rectifier www.onsemi.com Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance Low Thermal Resistance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices TRENCH SCHOTTKY RECTIFIER 2.0 AMPERES 60 VOLTS SMA−FL CASE 403AA SYTLE 6 Mechanical Characteristics: • • • • • Case: Molded Epoxy Epoxy Meets UL 94 V−0 @ 0.125 in Weight: 95 mg (Approximately) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Maximum for 10 Seconds MSL 1 Typical Applications • Switching Power Supplies including Compact Adapters and Flat • • • • • Panel Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation Automotive LED Lighting (Interior and Exterior) MARKING DIAGRAM 26E AYWWG 26E A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† NRTSAF260ET3G SMA−FL (Pb−Free) 10,000/ Tape & Reel NRVTSAF260ET3G SMA−FL (Pb−Free) 10,000/ Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 3 1 Publication Order Number: NRTSAF260E/D NRTSAF260E, NRVTSAF260E MAXIMUM RATINGS Rating Symbol Value Unit VRRM VRWM VR 60 V Average Rectified Forward Current (TL = 150°C) IO 2.0 A Peak Repetitive Forward Current (Square Wave, 20 kHz, TL = 147°C) IFRM 4.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 50 A Tstg, TJ −65 to +175 °C Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Storage and Operating Junction Temperature Range (Note 1) Voltage Rate of Change (Rated VR, TJ = 25°C) dv/dt V/ms 10,000 Controlled Avalanche Energy WAVAL 20 mJ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 24.6 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 79 °C/W Thermal Resistance, Junction−to−Ambient (Note 3) RqJA 239 °C/W ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 4) (IF = 1.0 A, TJ = 25°C) (IF = 2.0 A, TJ = 25°C) (IF = 1.0 A, TJ = 125°C) (IF = 2.0 A, TJ = 125°C) VF Maximum Instantaneous Reverse Current (Note 4) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR Typ Max 0.47 0.38 0.53 0.47 0.55 0.65 0.47 0.58 3.0 1.0 12 3.0 Unit V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board. 3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board. 4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRTSAF260E, NRVTSAF260E TYPICAL CHARACTERISTICS 10 iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 TA = 175°C TA = 150°C 1 TA = 125°C TA = 85°C TA = 25°C TA = −55°C 0.1 0.8 1.0 0.9 1.1 0.1 0.5 0.3 1.1 0.9 0.7 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 1.E−01 TA = 175°C 1.E−02 TA = 175°C 1.E−02 TA = 150°C 1.E−03 TA = 125°C TA = 150°C TA = 125°C 1.E−03 1.E−04 TA = 85°C TA = 85°C 1.E−04 1.E−05 1.E−05 TA = 25°C 1.E−06 1.E−07 TA = 25°C 1.E−06 10 5 15 20 25 30 35 40 45 50 55 60 5 10 15 20 25 30 35 40 50 45 55 60 VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics IF(AV), AVERAGE FORWARD CURRENT (A) VR, INSTANTANEOUS REVERSE VOLTAGE (V) 1000 C, JUNCTION CAPACITANCE (pF) 10 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TJ = 25°C 100 10 0.1 1 10 3.5 DC 3.0 2.5 SQUARE WAVE 2.0 1.5 1.0 RqJL = 24.6°C/W 0.5 0 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 160 NRTSAF260E, NRVTSAF260E TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 6 IPK/IAV = 20 5 IPK/IAV = 10 4 IPK/IAV = 5 3 Square Wave 2 DC 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 100 50% Duty Cycle 20% 10 10% 5% 2% 1 1% 0.1 P(pk) t1 0.01 Assumes 25°C ambient and soldered to a 700 mm2 − 1 oz copper pad on PCB Single Pulse t2 DUTY CYCLE, D = t1/t2 0.001 1E−07 1E−06 1E−05 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (S) Figure 8. Typical Transient Thermal Response, Junction−to−Ambient R(t) (°C/W) 1000 50% Duty Cycle 100 20% 10% 5% 10 2% 1 1% P(pk) t1 0.1 0.01 Assumes 25°C ambient and soldered to a 20 mm2 − 1 oz copper pad on PCB Single Pulse t2 DUTY CYCLE, D = t1/t2 0.001 1E−07 1E−06 1E−05 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (S) Figure 9. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 4 10 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O DATE 02 MAR 2011 SCALE 2:1 E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c 2X C SIDE VIEW MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 SEATING PLANE b 2X L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 5.56 1.76 1.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON55210E SMA−FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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