NRVTSAF360T3G

NRTSAF360, NRVTSAF360 Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices www.onsemi.com TRENCH SCHOTTKY RECTIFIER 3.0 AMPERE 60 VOLTS Typical Applications • Switching Power Supplies including Tablet Adapters, and Flat Panel • • • • • Display High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation Automotive LED Lighting SMA−FL CASE 403AA STYLE 6 MARKING DIAGRAM 3M6 AYWWG Mechanical Characteristics: • • • • • • Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements Weight: 95 mg (Approximately) 3M6 A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Package Shipping† NRTSAF360T3G SMA−FL (Pb−Free) 5000 / Tape & Reel NRVTSAF360T3G SMA−FL (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 1 1 Publication Order Number: NRTSAF360/D NRTSAF360, NRVTSAF360 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (TL = 143°C) Symbol Value Unit VRRM VRWM VR 60 V IO A 3.0 Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TL = 138°C IFRM 6.0 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature (Note 1) TJ −55 to +175 °C A 100 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction−to−Lead (Note 2) YJCL 24.5 °C/W Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 81 °C/W Typ Max Unit 0.48 0.41 0.57 0.64 0.58 0.78 4.5 3.5 50 15 2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board. ELECTRICAL CHARACTERISTICS Rating Symbol Instantaneous Forward Voltage (Note 3) (IF = 3 A, TJ = 25°C) (IF = 3 A, TJ = 125°C) (IF = 6 A, TJ = 25°C) VF Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) IR V mA mA Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRTSAF360, NRVTSAF360 TYPICAL CHARACTERISTICS 10 iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C TA = 150°C TA = 125°C 1 TA = 85°C TA = 25°C TA = −55°C 0.1 IR, INSTANTANEOUS REVERSE CURRENT (A) 0 0.1 0.2 0.3 0.5 0.4 0.6 TA = 125°C TA = 85°C 1 TA = 25°C TA = −55°C 0.4 0.3 0.5 0.7 0.6 0.8 0.9 1.0 1.1 1.2 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 1.E+00 TA = 175°C TA = 150°C 1.E−02 TA = 125°C 1.E−03 TA = 85°C TA = 175°C 1.E−01 TA = 150°C 1.E−02 TA = 125°C TA = 85°C 1.E−03 1.E−04 1.E−04 1.E−05 TA = 25°C TA = 25°C 1.E−05 1.E−06 1.E−07 10 15 20 25 30 35 40 45 50 55 60 5 10 15 20 25 30 35 40 45 50 55 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics TJ = 25°C 100 10 0.1 1.E−06 IF(AV), AVERAGE FORWARD CURRENT (A) 5 1000 C, JUNCTION CAPACITANCE (pF) TA = 150°C 0.1 0.2 0.8 0.7 TA = 175°C 10 IR, INSTANTANEOUS REVERSE CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 5 4.5 DC 4 3.5 Square Wave 3 2.5 2 1.5 1 0.5 0 RqJL = 24.5°C/W 0 20 40 60 80 100 120 VR, REVERSE VOLTAGE (V) TL, LEAD TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 60 140 160 175 NRTSAF360, NRVTSAF360 TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 6 IPK/IAV = 20 5 IPK/IAV = 10 IPK/IAV = 5 4 3 Square Wave 2 DC 1 0 0 0.5 1.0 1.5 2.0 2.5 3.5 3.0 4.0 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation R(t) (°C/W) 100 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 0.01 Single Pulse 0.001 1E−07 1E−06 1E−05 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 8. Typical Transient Thermal Response Characteristics, Junction−to−Ambient www.onsemi.com 4 100 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA−FL CASE 403AA−01 ISSUE O DATE 02 MAR 2011 SCALE 2:1 E E1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. D DIM A b c D E E1 L TOP VIEW A c 2X C SIDE VIEW MILLIMETERS MIN MAX 0.90 1.10 1.25 1.65 0.15 0.30 2.40 2.80 4.80 5.40 4.00 4.60 0.70 1.10 SEATING PLANE b 2X L BOTTOM VIEW RECOMMENDED SOLDER FOOTPRINT* 5.56 1.76 1.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON55210E SMA−FL Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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