NRVTSS3100ET3G

NRVTSS3100E Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low • • • • • • Forward Voltage and Low Leakage Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature Higher Efficiency for Achieving Regulatory Compliance High Surge Capability NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These are Pb−Free and Halide−Free Devices www.onsemi.com SCHOTTKY BARRIER RECTIFIERS 3 AMPERES 100 VOLTS MARKING DIAGRAM Typical Applications • Switching Power Supplies including Wireless, Smartphone and • • • • • Notebook Adapters High Frequency and DC−DC Converters Freewheeling and OR−ing diodes Reverse Battery Protection Instrumentation LED Lighting TE31 A Y WW G • AYWW TE31G G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) Mechanical Characteristics: • • • • SMB CASE 403A Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in. Lead Finish: 100% Matte Sn (Tin) Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Device Meets MSL 1 Requirements ORDERING INFORMATION Device Package Shipping† NRVTSS3100ET3G SMB (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 0 1 Publication Order Number: NRVTSS3100E/D NRVTSS3100E MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR V 100 Average Rectified Forward Current (TL = 142°C) IF(AV) 3.0 A Peak Repetitive Forward Current, (Square Wave, 20 kHz, TL = 135°C) IFRM 6 A Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 90 A Storage Temperature Range Tstg −65 to +175 °C Operating Junction Temperature TJ −55 to +175 °C ESD Rating (Human Body Model) 1B ESD Rating (Machine Model) M3 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Typ Max Unit Thermal Resistance, Junction−to−Lead, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) Characteristic RθJL − 17.5 °C/W Thermal Resistance, Junction−to−Ambient, Steady State (Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board) RθJA − 90 °C/W 0.88 0.995 0.66 0.7 0.9 0.62 5.0 2.0 ELECTRICAL CHARACTERISTICS Instantaneous Forward Voltage (Note 1) (iF = 3.0 Amps, TJ = 25°C) vF (iF = 3.0 Amps, TJ = 125°C) Reverse Current (Note 1) (Rated dc Voltage, TJ = 25°C) (Rated dc Voltage, TJ = 125°C) iR Diode Capacitance (Rated dc Voltage, TJ = 25°C, f = 1 MHz) Cd V mA mA pF 14.4 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 NRVTSS3100E TYPICAL CHARACTERISTICS iF, INSTANTANEOUS FORWARD CURRENT (A) 100 TA = 175°C 10 TA = 150°C TA = 125°C 1 TA = 25°C TA = −55°C 0.1 TA = 25°C TA = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Figure 1. Typical Instantaneous Forward Characteristics Figure 2. Maximum Instantaneous Forward Characteristics 1.E−01 TA = 175°C TA = 150°C 1.E−03 TA = 125°C 1.E−04 1.E−02 TA = 175°C TA = 150°C 1.E−03 TA = 125°C TA = 85°C 1.E−04 TA = 85°C 1.E−05 1.E−05 1.E−06 TA = 25°C TA = 25°C 1.E−06 1.E−07 1.E−07 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 VR, INSTANTANEOUS REVERSE VOLTAGE (V) VR, INSTANTANEOUS REVERSE VOLTAGE (V) Figure 3. Typical Reverse Characteristics Figure 4. Maximum Reverse Characteristics 1000 C, JUNCTION CAPACITANCE (pF) 1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) 1.E−02 TJ = 25°C 100 10 0.1 TA = 150°C TA = 125°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.E−01 1.E−08 10 10 IR, INSTANTANEOUS REVERSE CURRENT (A) IR, INSTANTANEOUS REVERSE CURRENT (A) 0 TA = 175°C 0.1 IF(AV), AVERAGE FORWARD CURRENT (A) iF, INSTANTANEOUS FORWARD CURRENT (A) 100 1 10 100 6 5 DC 4 Square Wave 3 2 1 RqJL = 17.4°C/W 0 0 20 40 60 80 100 120 140 VR, REVERSE VOLTAGE (V) TC, LEAD TEMPERATURE (°C) Figure 5. Typical Junction Capacitance Figure 6. Current Derating www.onsemi.com 3 160 100 NRVTSS3100E TYPICAL CHARACTERISTICS PF(AV), AVERAGE FORWARD POWER DISSIPATION (W) 6 5 IPK/IAV = 20 IPK/IAV = 10 IPK/IAV = 5 4 Square Wave 3 DC 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 IF(AV), AVERAGE FORWARD CURRENT (A) Figure 7. Forward Power Dissipation R(t), TYPICAL TRANSIENT THERMAL RESISTANCE (°C/W) 1000 100 10 1 50% Duty Cycle 20% 10% 5% 2% 1% 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (S) Figure 8. Typical Transient Thermal Response, Junction−to−Ambient www.onsemi.com 4 100 1000 NRVTSS3100E PACKAGE DIMENSIONS SMB CASE 403A−03 ISSUE J HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 A L L1 A1 c SOLDERING FOOTPRINT* 2.261 0.089 2.743 0.108 2.159 0.085 SCALE 8:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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