NRVUD340T4G-VF01

MURD340T4G, NRVUD340T4G, NRVUD340T4G-VF01 Switch-mode PowerRectifier www.onsemi.com DPAK Surface Mount Package These state−of−the−art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ULTRAFAST RECTIFIER 3 A, 400 V Features • • • • • Low Forward Voltage Drop Low Leakage Ultra−Fast Recovery Time NRVUD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant DPAK CASE 369C 1 MARKING DIAGRAM 1 Mechanical Characteristics • Case: Epoxy, Molded • Weight: 0.4 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260°C Max. for 10 Seconds MAXIMUM RATINGS Rating Symbol Value Unit VR 400 V Average Rectified Forward Current IF(AV) 3 A Nonrepetitive Peak Surge Current IFSM 75 A TJ, Tstg −55 to +175 °C Peak Reverse Voltage Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 3 U340 A Y WW G AYWW U 340G = Specific Device Code = Assembly Location* = Year = Work Week = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION Package Shipping† MURD340T4G DPAK (Pb−Free) 2,500 / Tape & Reel NRVUD340T4G DPAK (Pb−Free) 2,500 / Tape & Reel NRVUD340T4G− VF01 DPAK (Pb−Free) 2,500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2016 June, 2017 − Rev. 4 1 Publication Order Number: MURD340/D MURD340T4G, NRVUD340T4G, NRVUD340T4G−VF01 THERMAL CHARACTERISTICS Characteristic Thermal Resistance − Junction−to−Case Thermal Resistance − Junction−to−Ambient (Note 1) 1. Rating applies when surface mounted on a 700 mm2, Symbol Value Unit RqJC 2 °C/W RqJA 49 °C/W Symbol Value Unit 1 oz Cu heat spreader. ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (IF = 3.0 A, TJ = 25°C) (IF = 3.0 A, TJ = 150°C) VF Maximum Instantaneous Reverse Current (Rated VR) (TJ = 25°C, 400 V) (TJ = 150°C, 400 V) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms, VR = 30 V, TJ = 25°C) trr V 1.15 0.92 mA 5 500 ns 50 ESD Ratings: Machine Model = C Human Body Model = 3B V > 400 > 8000 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 100.0 10.0 1.0 175°C 0.1 0.4 0.5 0.6 150°C 0.7 0.8 0.9 25°C 1.0 1.1 1.2 1.3 VF, INSTANTANEOUS VOLTAGE (V) 1.4 IF, INSTANTANEOUS FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS 100.0 10.0 175°C 1.0 0.1 0.4 0.5 Figure 1. Typical Forward Voltage 0.6 0.7 150°C 0.8 0.9 1.0 25°C 1.1 1.2 1.3 VF, INSTANTANEOUS VOLTAGE (V) Figure 2. Maximum Forward Voltage www.onsemi.com 2 1.4 MURD340T4G, NRVUD340T4G, NRVUD340T4G−VF01 1.0E−02 1.0E−02 1.0E−03 1.0E−03 1.0E−04 IR, REVERSE CURRENT (A) IR, REVERSE CURRENT (A) TYPICAL CHARACTERISTICS 175°C 1.0E−05 150°C 1.0E−06 1.0E−07 25°C 1.0E−08 1.0E−09 1.0E−10 0.0 50 100 150 200 250 300 175°C 150°C 1.0E−04 1.0E−05 1.0E−06 25°C 1.0E−07 1.0E−08 1.0E−09 1.0E−10 0.0 50 100 VR, REVERSE VOLTAGE (V) Po, AVERAGE POWER DISSIPATION (W) C, CAPACITANCE (pF) 10 20 40 60 80 100 120 140 160 180 200 3.5 3.0 SQUARE WAVE 2.5 1.5 1.0 0.5 0 0 0.5 IF, AVERAGE FORWARD CURRENT (A) IF, AVERAGE FORWARD CURRENT (A) 5.0 DC 2.0 1.0 0 100 110 120 130 140 150 160 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Figure 6. Power Dissipation RqJC = 2°C/W 3.0 1.0 Io, AVERAGE FORWARD CURRENT 6.0 SQUARE WAVE DC 2.0 Figure 5. Typical Capacitance TJ = 175°C/W 300 4.0 VR, REVERSE VOLTAGE (VOLTS) 4.0 250 Figure 4. Maximum Reverse Voltage 100 0 200 VR, REVERSE VOLTAGE (V) Figure 3. Typical Reverse Voltage 1.0 150 170 180 6.0 RqJC = 2°C/W 5.0 TJ = 175°C/W 4.0 DC 3.0 SQUARE WAVE 2.0 1.0 0 0 TC, CASE TEMPERATURE (°C) 20 40 60 80 100 120 140 160 180 200 TA, AMBIENT TEMPERATURE (°C) Figure 7. Current Derating, Case Figure 8. Current Derating, Ambient www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F 4 1 2 DATE 21 JUL 2015 3 SCALE 1:1 A E b3 C A B c2 4 L3 Z D 1 L4 2 3 NOTE 7 b2 e c SIDE VIEW b 0.005 (0.13) TOP VIEW H DETAIL A M BOTTOM VIEW C Z H L2 GAUGE PLANE C L L1 DETAIL A Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS ROTATED 905 CW STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− GENERIC MARKING DIAGRAM* XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. 6.17 0.243 SCALE 3:1 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z XXXXXX A L Y WW G 3.00 0.118 1.60 0.063 STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527D DPAK (SINGLE GAUGE) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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