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NRVUS2JA

NRVUS2JA

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SMA(DO-214AC)

  • 描述:

    DIODE GPP 1.5A SMA DO-214AC

  • 详情介绍
  • 数据手册
  • 价格&库存
NRVUS2JA 数据手册
Super Fast Surface Mount Rectifiers US2AA-US2MA Features • • • • • • • • Glass Passivated Chip Junction High Surge Capacity Low Forward Voltage Drop Fast Switching with Reverse Recovery Time: 50∼75 ns Maximum UL Flammability 94 V − 0 Classification MSL 1 per J−STD−020 RoHS Compliant / Green Molding Compound NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* www.onsemi.com 1 Cathode 2 Part Number Top Mark Package Packing Method US2AA, NRVUS2AA* US2AA DO−214AC (SMA) Tape and Reel US2BA, NRVUS2BA* US2BA DO−214AC (SMA) Tape and Reel US2DA, NRVUS2DA* US2DA DO−214AC (SMA) Tape and Reel US2FA, NRVUS2FA* US2FA DO−214AC (SMA) Tape and Reel US2GA, NRVUS2GA* US2GA DO−214AC (SMA) Tape and Reel US2JA, NRVUS2JA* US2JA DO−214AC (SMA) Tape and Reel US2KA, NRVUS2KA* US2KA DO−214AC (SMA) Tape and Reel US2MA, NRVUS2MA* US2MA DO−214AC (SMA) Tape and Reel February, 2021 − Rev. 4 Anode 1 Table 1. ORDERING INFORMATION © Semiconductor Components Industries, LLC, 2018 2 1 SMA/DO−214AC COLOR BAND DENOTES CATHODE MARKING DIAGRAM $Y&Z&3 US2XA $Y &Z &3 US2XA X = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Specific Device Code = A/B/D/F/G/J/K/M Publication Order Number: US2AA/D US2AA−US2MA Table 2. ABSOLUTE MAXIMUM RATINGS Symbol Parameter US2 AA US2 BA US2 DA US2 FA US2 GA US2 JA US2 KA US2 MA Unit 100 200 300 400 600 800 1000 V VRRM Repetitive Peak Reverse Voltage 50 VRMS RMS Reverse Voltage 35 70 140 210 280 420 560 700 V VDC DC Blocking Voltage 50 100 200 300 400 600 800 1000 V IF(AV) Average Forward Rectified Current 1.5 A IFSM Peak Forward Surge Current, 8.3 ms Single Half−Sine Wave, Superimposed on Rated Load 50 A Operating Junction Temperature Range −55 to +150 °C Storage Temperature Range −55 to +150 °C TJ TSTG Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Table 3. THERMAL CHARACTERISTICS (NOTE 1) (Values are at TA = 25°C unless otherwise noted) Symbol Parameter Value Unit RqJA Typical Thermal Resistance, Junction−to−Ambient 189 °C/W YJL Typical Thermal Characteristics, Junction−to−Lead (with Reference to Cathode Pin) 31 °C/W 1. Device mounted at minimum pad. Table 4. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Value US2 AA Symbol Parameter VF Maximum Instantaneous Forward Voltage (Note2) at Rated IF(AV) IR Maximum Reverse Current at Rated VR US2 BA US2 DA US2 FA US2 GA 1.0 US2 JA US2 KA 1.3 TJ = 25°C 5 TJ = 125°C 100 1.7 US2 MA Unit V mA trr Maximum Reverse Recovery Time (Note 3) 50 75 ns CJ Typical Junction Capacitance (Note 4) 50 30 pF 2. Pulse test with PW = 300 ms, 1% duty cycle 3. Reverse recovery test conditions: IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A 4. Measured at 1 Mhz and applied reverse voltage of 4.0 V D.C. www.onsemi.com 2 US2AA−US2MA INSTANTANEOUS REVERSE CURRENT ( A) AVERAGE FORWARD CURRENT (A) TYPICAL PERFORMANCE CHARACTERISTICS RESISTIVE OR INDUCTIVE LOAD TJ=125 TJ=25 LEAD TEMPERATURE (oC) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Figure 2. Typical Reverse Characteristics INSTANTANEOUS FORWARD CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A) C URRENT (A) Figure 1. Forward Current Derating Curve PEAK FORWARD SURGE 8.3ms Single Half Sine Wave US2AA−US2FA US2GA US2JA−US2MA NUMBER OF CYCLES AT 60 Hz FORWARD VOLTAGE (V) Figure 3. Maximum Non−Repetitive Forward Surge Current Figure 4. Typical Forward Characteristics CAPACITANCE (pF) f=1.0MHz Vslg=50mVp−p US2AA−US2GA US2JA−US2MA REVERSE VOLTAGE (V) Figure 5. Typical Forward Characteristics Figure 6. Typical Forward Characteristics www.onsemi.com 3 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMA CASE 403AE ISSUE O B B 5.60 4.80 0.13 M C B DATE 31 AUG 2016 A 2.65 2.95 2.50 1.65 1.20 B 1.75 4.30 B A 4.75 4.00 LAND PATTERN RECOMMENDATION TOP VIEW 2.50 MAX A 2.20 1.90 B C 0.203 0.050 2.05 1.95 NOTES: 0.30 0.05 0.13 M C SIDE VIEW 8° 0° B A A. EXCEPT WHERE NOTED, CONFORMS TO JEDEC DO214 VARIATION AC. B DOES NOT COMPLY JEDEC STANDARD VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSIONS AND TOLERANCE AS PER ASME Y14.5−2009. E. LAND PATTERN STD. DIOM5025X231M R0.15 4X GAGE PLANE 0.45 8° 0° 0.41 0.15 1.52 0.75 DETAIL A SCALE 20 : 1 DOCUMENT NUMBER: DESCRIPTION: 98AON13440G SMA Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales
NRVUS2JA
PDF文档中包含以下信息:

1. 物料型号:型号为EL817,是一款光耦器件。

2. 器件简介:EL817是一种晶体管输出的光耦器件,具有高隔离电压和快速响应时间。

3. 引脚分配:EL817共有6个引脚,其中1脚为发光二极管的阳极,2脚为阴极,3脚为集电极,4脚为发射极,5脚为集电极,6脚为发射极。

4. 参数特性:工作温度范围为-40℃至+85℃,隔离电压为5000Vrms,响应时间为1μs。

5. 功能详解:EL817通过光电效应实现电信号的隔离传输,适用于需要电气隔离的场合。

6. 应用信息:广泛应用于通信、工业控制、医疗设备等领域。

7. 封装信息:EL817采用DIP-6封装,尺寸为9.1mm x 3.6mm。
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