NSB4904DW1T1G

NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSB4904DW1T1G and NSB4904DW1T2G, two complementary BRT devices are housed in the SC−88/SOT−363 package which is ideal for low power surface mount applications where board space is at a premium. Features http://onsemi.com 6 R1 Q1 Q2 R2 1 2 R1 3 5 R2 4 1 SC−88/SOT−363 CASE 419B STYLE 1 • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MARKING DIAGRAM 6 RC MG G 1 RC = Device Marking M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION See specific ordering information in the ordering information table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2009 October, 2009 − Rev. 2 1 Publication Order Number: NSB4904DW1T1G/D NSB4904DW1T1G, NSB4904DW1T2G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Thermal Resistance − Junction-to-Lead Junction and Storage Temperature 1. FR−4 @ Minimum Pad. 2. FR−4 @ 1.0 x 1.0 inch Pad. Symbol PD Max 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) 670 (Note 1) 490 (Note 2) Max 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) 493 (Note 1) 325 (Note 2) 188 (Note 1) 208 (Note 2) − 55 to +150 Unit mW mW/°C °C/W RqJA Symbol PD Unit mW mW/°C °C/W °C/W °C RqJA RqJL TJ, Tstg http://onsemi.com 2 NSB4904DW1T1G, NSB4904DW1T2G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) ICBO ICEO IEBO V(BR)CBO V(BR)CEO − − − 50 50 − − − − − 100 500 0.1 − − nA nA mA V V ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio hFE VCE(sat) VOL VOH R1 R1/R2 80 − − 4.9 32.9 0.8 140 − − − 47 1.0 − 0.25 0.2 − 61.1 1.2 V V V kW 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 − 50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve ORDERING INFORMATION AND RESISTOR VALUES Device NSB4904DW1T1G NSB4904DW1T2G R1 (K) 47 47 R2 (K) 47 47 Package SOT−363 (Pb−Free) SOT−363 (Pb−Free) Shipping† 3000/Tape & Reel 3000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. http://onsemi.com 3 NSB4904DW1T1G, NSB4904DW1T2G TYPICAL ELECTRICAL CHARACTERISTICS − NSB4904DW1T1G, NSB4904DW1T2G NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C -25°C 100 1 TA = -25°C 0.1 25°C 75°C 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 1 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 25°C TA = -25°C 0.8 C ob , CAPACITANCE (pF) 0.6 1 0.4 0.1 0.2 0.01 VO = 5 V 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current http://onsemi.com 4 NSB4904DW1T1G, NSB4904DW1T2G TYPICAL ELECTRICAL CHARACTERISTICS − NSB4904DW1T1G, NSB4904DW1T2G PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 h FE , DC CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 -25°C TA = -25°C 75°C 0.1 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 1 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C 25°C -25°C IC, COLLECTOR CURRENT (mA) 0.8 C ob , CAPACITANCE (pF) 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 5 NSB4904DW1T1G, NSB4904DW1T2G PACKAGE DIMENSIONS SC−88/SOT−363/SC70−6 CASE 419B−02 ISSUE W D e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B−01 OBSOLETE, NEW STANDARD 419B−02. 4 DIM A A1 A3 b C D E e L HE MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 6 5 HE 1 2 3 −E− b 6 PL 0.2 (0.008) M E M A3 C A STYLE 1: PIN 1. 2. 3. 4. 5. 6. A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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