NSBA114TDP6T5G

NSBA114EDP6T5G Series Preferred Devices Dual Digital Transistors (BRT) PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The digital transistor eliminates these individual components by integrating them into a single device. The use of a digital transistor can reduce both system cost and board space. The device is housed in the SOT−963 package which is designed for low power surface mount applications. Features http://onsemi.com (3) R1 Q1 R2 (4) (2) R2 Q2 R1 (5) (6) (1) • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT−963 Package can be Soldered using Wave or Reflow. Available in 4 mm, 8000 Unit Tape & Reel These are Pb−Free Devices These are Halide−Free Devices MARKING DIAGRAM XM 1 SOT−963 CASE 527AD MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc X M G = Specific Device Code = Date Code = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ORDERING INFORMATION Device NSBA114EDP6T5G Package SOT−963 (Pb−Free) Shipping† 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 5 1 Publication Order Number: NSBA114EDP6/D NSBA114EDP6T5G Series THERMAL CHARACTERISTICS Characteristic SINGLE HEATED Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance (Note 1) Junction-to-Ambient Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C Thermal Resistance (Note 2) Junction-to-Ambient DUAL HEATED (Note 3) Total Device Dissipation TA = 25°C (Note 1) Derate above 25°C Thermal Resistance (Note 1) Junction-to-Ambient Total Device Dissipation TA = 25°C (Note 2) Derate above 25°C Thermal Resistance (Note 2) Junction-to-Ambient Junction and Storage Temperature PD 339 2.7 369 mW mW/°C °C/W PD 231 1.9 540 269 2.2 464 mW mW/°C °C/W Symbol Max Unit RqJA PD mW mW/°C °C/W RqJA RqJA PD 408 3.3 306 − 55 to +150 mW mW/°C °C/W °C RqJA TJ, Tstg 1. FR−4 @ 100 mm2, 1 oz. copper traces, still air. 2. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 3. Dual heated values assume total power is sum of two equally powered channels. ORDERING INFORMATION, DEVICE MARKING AND RESISTOR VALUES Device NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA114TDP6T5G NSBA115TDP6T5G Marking* F (180°) E (90°) E (270°) Q (0°) L (90°) F (90°) K (90°) P (90°) J (90°) T (180°) V (180°) R1 (k) 10 22 47 10 2.2 4.7 4.7 2.2 47 10 100 R2 (k) 10 22 47 47 ∝ 4.7 47 47 22 ∝ ∝ SOT−963 (Pb−Free) 8000/Tape & Reel Package Shipping† †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *(XX°) = Degree rotation in the clockwise direction. http://onsemi.com 2 NSBA114EDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector−Base Cutoff Current (VCB = 50 V, IE = 0) Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter−Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA114TDP6T5G NSBA143EDP6T5G NSBA115TDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G ICBO ICEO IEBO − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 4.0 0.9 1.5 0.1 0.18 0.2 0.13 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector−Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA115TDP6T5G/NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA114TDP6T5G V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 15 80 80 80 160 − 60 100 140 140 350 27 140 140 140 250 − − − − − − − − − − − 0.25 Vdc Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) NSBA114EDP6T5G/NSBA124EDP6T5G/NSBA144EDP6T5G NSBA114YDP6T5G/NSBA123TDP6T5G NSBA123JDP6T5G/NSBA144EDP6T5G (IC = 10 mA, IB = 1 mA) NSBA143ZDP6T5G/NSBA143EDP6T5G/NSBA114TDP6T5G (IC = 10 mA, IB = 5 mA) NSBA115TPD6T5G Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) NSBA114TDP6T5G NSBA114EDP6T5G NSBA124EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144EDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G VCE(sat) VOL Vdc − − − − − − − − − − − 4.9 − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 − Vdc (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) NSBA114EDP6T5G/NSBA124EDP6T5G/NSBA144EDP6T5G NSBA114YDP6T5G/NSBA143ZDP6T5G/NSBA123JDP6T5G NSBA144WDP6T5G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) NSBA123TDP6T5G/NSBA143EDP6T5G/ NSBA114TDP6T5G/NSBA115TDP6T5G 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% VOH http://onsemi.com 3 NSBA114EDP6T5G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Input Resistor NSBA114TDP6T5G NSBA114EDP6T5G NSBA124EDP6T5G NSBA144EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G NSBA143EDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G NSBA115TDP6T5G NSBA114EDP6T5G/NSBA124EDP6T5G NSBA144EDP6T5G/NSBA143EDP6T5G NSBA114YDP6T5G NSBA123TDP6T5G/NSBA114TDP6T5G/ NSBA115TDP6T5G NSBA143ZDP6T5G NSBA123JDP6T5G NSBA144WDP6T5G Symbol R1 Min 7.0 7.0 15.4 32.9 7.0 1.5 3.3 3.3 1.54 32.9 70 0.8 0.17 − 0.055 0.038 1.7 Typ 10 10 22 47 10 2.2 4.7 4.7 2.2 47 100 1.0 0.21 − 0.1 0.047 2.1 Max 13 13 28.6 61.1 13 2.9 6.1 6.1 2.86 61.1 130 1.2 0.25 − 0.185 0.056 2.6 Unit kW Resistor Ratio R1/R2 http://onsemi.com 4 NSBA114EDP6T5G Series TYPICAL ELECTRICAL CHARACTERISTICS − NSBA114EDP6T5G VCE(SAT), COLLECTOR−TO−EMITTER SATURATION VOLTAGE (V) 1.0 IC/IB = 10 TA = 25°C TA = 150°C 0.10 TA = −55°C 1000 VCE = 10 V hFE, DC CURRENT GAIN 100 150°C 25°C 10 −55°C 0.01 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 1.0 0.1 Figure 1. VCE(sat) vs. IC 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. DC Current Gain 2.4 COBO, OUTPUT CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 5 10 15 20 25 30 35 40 45 50 100 10 150°C 1.0 −55°C 0.1 25°C 0.01 0 1 2 3 4 5 REVERSE BIAS VOLTAGE (V) Figure 3. Output Capacitance 10 25°C −55°C 1.0 150°C Figure 4. Output Current vs. Input Voltage Vin, INPUT VOLTAGE (V) Vin, INPUT VOLTAGE (V) 0.1 0 5 10 15 20 25 30 35 40 45 50 Figure 5. Input Voltage vs. Output Current IC, COLLECTOR CURRENT (mA) http://onsemi.com 5 NSBA114EDP6T5G Series PACKAGE DIMENSIONS SOT−963 CASE 527AD−01 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. DIM A b C D E e L HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.10 0.15 0.20 0.07 0.12 0.17 0.95 1.00 1.05 0.75 0.80 0.85 0.35 BSC 0.05 0.10 0.15 0.95 1.00 1.05 MIN 0.004 0.003 0.037 0.03 INCHES NOM MAX D A B 4 E 3 C 0.08 C A B A C L 6 5 12 e HE 6X b 0.006 0.008 0.005 0.007 0.039 0.041 0.032 0.034 0.014 BSC 0.002 0.004 0.006 0.037 0.039 0.041 SOLDERING FOOTPRINT* 0.35 0.014 0.35 0.014 0.90 0.0354 0.20 0.008 0.20 0.008 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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