NSBC114EPDXV6_04

NSBC114EPDXV6T1, NSBC114EPDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the NSBC114EPDXV6T1 series, two complementary BRT devices are housed in the SOT−563 package which is ideal for low power surface mount applications where board space is at a premium. http://onsemi.com (3) R1 Q1 Q2 R2 (4) R1 (5) (6) (2) R2 (1) • • • • • 6 54 23 Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch Tape and Reel Lead Free Solder Plating 1 SOT−563 CASE 463A PLASTIC MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc MARKING DIAGRAM xx D THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature 1. FR−4 @ Minimum Pad RqJA TJ, Tstg TA = 25°C RqJA TA = 25°C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) −55 to +150 Unit mW mW/°C °C/W xx = Specific Device Code (see table on page 2) D = Date Code ORDERING INFORMATION Device Package Shipping 4 mm pitch 4000/Tape & Reel 2 mm pitch 8000/Tape & Reel NSBC114EPDXV6T1 SOT−563 NSBC114EPDXV6T5 SOT−563 Unit mW mW/°C °C/W °C Symbol PD DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2004 1 January, 2004 − Rev. 3 Publication Order Number: NSBC114EPDXV6/D NSBC114EPDXV6T1, NSBC114EPDXV6T5 DEVICE MARKING AND RESISTOR VALUES Device NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 (Note 2) NSBC143TPDXV6T1 (Note 2) NSBC113EPDXV6T1 (Note 2) NSBC123EPDXV6T1 (Note 2) NSBC143EPDXV6T1 (Note 2) NSBC143ZPDXV6T1 (Note 2) NSBC124XPDXV6T1 (Note 2) NSBC123JPDXV6T1 (Note 2) Package SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 SOT−563 Marking 11 12 13 14 15 16 30 31 32 33 34 35 R1 (kW) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (kW) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 ICBO ICEO IEBO − − − − − − − − − − − − − − 50 50 − − − − − − − − − − − − − − − − 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 − − nAdc nAdc mAdc Symbol Min Typ Max Unit Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 − 60 100 140 140 350 350 5.0 15 30 200 150 140 − − − − − − − − − − − − − 0.25 Vdc Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 5 mA) NSBC113EPDXV6T1/NSBC123EPDXV6T1 (IC = 10 mA, IB = 1 mA) NSBC114TPDXV6T1/NSBC143TPDXV6T1 NSBC143EPDXV6T1/NSBC143ZPDXV6T1/NSBC124XPDXV6T1 VCE(sat) 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 2 NSBC114EPDXV6T1, NSBC114EPDXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) Characteristic ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) VOL NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 NSBC144EPDXV6T1 VOH NSBC113EPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC143ZPDXV6T1 NSBC114EPDXV6T1 NSBC124EPDXV6T1 NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1 NSBC143TPDXV6T1 NSBC113EPDXV6T1 NSBC123EPDXV6T1 NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 − 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 − 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 − 1.2 0.185 0.56 0.056 kW − − − − − − − − − − − − 4.9 − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 − Vdc Vdc Symbol Min Typ Max Unit (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor Resistor Ratio NSBC114EPDXV6T1/NSBC124EPDXV6T1/NSBC144EPDXV6T1 NSBC114YPDXV6T1 NSBC114TPDXV6T1/NSBC143TPDXV6T1 NSBC113EPDXV6T1/NSBC123EPDXV6T1/NSBC143EPDXV6T1 NSBC143ZPDXV6T1 NSBC124XPDXV6T1 NSBC123JPDXV6T1 R1/R2 2. New resistor combinations. Updated curves to follow in subsequent data sheets. 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 NSBC114EPDXV6T1, NSBC114EPDXV6T5 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 −50 RqJA = 490°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 4 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 25°C 0.1 75°C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C −25°C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 75°C IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 5 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114EPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = −25°C 0.1 75°C 25°C TA = 75°C 100 25°C −25°C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) 10 1 2 0.1 1 0.01 0 1 2 VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = −25°C 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 6 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 25°C 75°C 1000 hFE, DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C −25°C 0.1 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25°C 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 75°C 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 7 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC124EPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = −25°C 25°C TA = 75°C 100 25°C −25°C 75°C 0.1 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 10 25°C TA = −25°C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) VO = 0.2 V TA = −25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 8 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75°C 25°C −25°C 1 TA = −25°C 0.1 25°C 75°C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 100 75°C 10 1 0.1 0.01 25°C TA = −25°C VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 9 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC144EPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 −25°C TA = −25°C 0.1 75°C 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 0.8 Cob , CAPACITANCE (pF) 0.6 0.4 0.2 0 f = 1 MHz lE = 0 V TA = 25°C 100 10 1 0.1 0.01 VO = 5 V 0 1 2 TA = 75°C 25°C −25°C 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 IC, COLLECTOR CURRENT (mA) 0.001 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 10 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 NPN TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = −25°C 25°C 75°C hFE, DC CURRENT GAIN (NORMALIZED) 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75°C 25°C −25°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = −25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 11 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114YPDXV6T1 PNP TRANSISTOR VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 TA = −25°C 25°C 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V 25°C −25°C TA = 75°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C −25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25°C TA = −25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 12 NSBC114EPDXV6T1, NSBC114EPDXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS − NSBC114TPDXV6T1 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25°C 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25°C VCE = 10 V VCE = 5.0 V VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. DC Current Gain − PNP Figure 43. DC Current Gain − NPN TYPICAL ELECTRICAL CHARACTERISTICS − NSBC143TPDXV6T1 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25°C 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25°C VCE = 10 V VCE = 5.0 V VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 44. DC Current Gain − PNP Figure 45. DC Current Gain − NPN http://onsemi.com 13 NSBC114EPDXV6T1, NSBC114EPDXV6T5 PACKAGE DIMENSIONS SOT−563, 6 LEAD CASE 463A−01 ISSUE O NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 A −X− C K 4 6 5 1 2 3 B −Y− S D G 5 6 PL M J XY 0.08 (0.003) DIM A B C D G J K S STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 BASE 1 COLLECTOR 2 EMITTER 2 BASE 2 COLLECTOR 1 STYLE 2: PIN 1. 2. 3. 4. 5. 6. EMITTER 1 EMITTER2 BASE 2 COLLECTOR 2 BASE 1 COLLECTOR 1 STYLE 3: PIN 1. 2. 3. 4. 5. 6. CATHODE 1 CATHODE 1 ANODE/ANODE 2 CATHODE 2 CATHODE 2 ANODE/ANODE 1 STYLE 4: PIN 1. 2. 3. 4. 5. 6. COLLECTOR COLLECTOR BASE EMITTER COLLECTOR COLLECTOR SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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