NSCT2907ALT1G
General Purpose Transistors
PNP Silicon
Features
• These are Pb−Free Devices
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
−60
Vdc
Collector −Base Voltage
VCBO
−60
Vdc
Emitter −Base Voltage
VEBO
−5.0
Vdc
IC
−600
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
PD
RJA
SOT−23
CASE 318
STYLE 6
1
2
PD
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
297 M G
G
1
297 = Specific Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Shipping †
Device
Package
NSCT2907ALT1G
SOT−23
(Pb−Free)
NSCT2907ALT3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0
1
Publication Order Number:
NSCT2907ALT1/D
NSCT2907ALT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector−Emitter Breakdown Voltage (Note 3) (IC = −10 mAdc, IB = 0)
V(BR)CEO
−60
−
Vdc
Collector −Base Breakdown Voltage (IC = −10 Adc, IE = 0)
V(BR)CBO
−60
−
Vdc
Emitter −Base Breakdown Voltage (IE = −10 Adc, IC = 0)
V(BR)EBO
−5.0
−
Vdc
Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
ICEX
−
−50
nAdc
Collector Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −50 Vdc, IE = 0, TA = 125°C)
ICBO
−
−
−0.010
−10
−
−50
75
100
100
100
50
−
−
−
300
−
−
−
−0.4
−1.6
−
−
−1.3
−2.6
fT
200
−
MHz
Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
8.0
pF
Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
30
ton
−
45
td
−
10
tr
−
40
toff
−
100
ts
−
80
tf
−
30
OFF CHARACTERISTICS
Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc)
Adc
IBL
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc) (Note 3)
hFE
Collector −Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc) (Note 3)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage (Note 3)
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Notes 3, 4), (IC = −50 mAdc, VCE = −20 Vdc,
f = 100 MHz)
SWITCHING CHARACTERISTICS
Turn−On Time
(VCC = −30 Vdc, IC = −150 mAdc,
IB1 = −15 mAdc)
Delay Time
Rise Time
Turn−Off Time
(VCC = −6.0 Vdc, IC = −150 mAdc,
IB1 = IB2 = −15 mAdc)
Storage Time
Fall Time
ns
3. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.
4. fT is defined as the frequency at which |hfe| extrapolates to unity.
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
INPUT
Zo = 50
PRF = 150 PPS
RISE TIME ≤ 2.0 ns
P.W. < 200 ns
−30 V
200
1.0 k
0
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
−30 V
200 ns
−6.0 V
1.0 k
1.0 k
0
50
−16 V
+15 V
50
37
TO OSCILLOSCOPE
RISE TIME ≤ 5.0 ns
1N916
200 ns
Figure 1. Delay and Rise Time Test Circuit
Figure 2. Storage and Fall Time Test Circuit
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2
NSCT2907ALT1G
TYPICAL CHARACTERISTICS
hFE , NORMALIZED CURRENT GAIN
3.0
VCE = −1.0 V
VCE = −10 V
2.0
TJ = 125°C
25°C
1.0
−55 °C
0.7
0.5
0.3
0.2
−0.1
−0.2 −0.3
−0.5 −0.7 −1.0
−2.0
−3.0
−5.0 −7.0
−10
−20
−30
−50 −70 −100
−200 −300
−500
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. DC Current Gain
−1.0
−0.8
IC = −1.0 mA
−10 mA
−100 mA
−500 mA
−0.6
−0.4
−0.2
0
−0.005
−0.01
−0.02 −0.03 −0.05 −0.07 −0.1
−0.2
−0.3 −0.5 −0.7 −1.0
IB, BASE CURRENT (mA)
−2.0
−3.0
−20 −30
−5.0 −7.0 −10
−50
Figure 4. Collector Saturation Region
500
tr
100
70
50
300
VCC = −30 V
IC/IB = 10
TJ = 25°C
tf
30
20
td @ VBE(off) = 0 V
3.0
−5.0 −7.0 −10
30
10
7.0
5.0
−5.0 −7.0 −10
2.0 V
−20 −30 −50 −70 −100
IC, COLLECTOR CURRENT
100
70
50
t′s = ts − 1/8 tf
20
10
7.0
5.0
VCC = −30 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
200
t, TIME (ns)
t, TIME (ns)
300
200
−200 −300 −500
Figure 5. Turn−On Time
−20 −30 −50 −70 −100
−200 −300 −500
IC, COLLECTOR CURRENT (mA)
Figure 6. Turn−Off Time
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3
NSCT2907ALT1G
TYPICAL SMALL−SIGNAL Characteristics
NOISE FIGURE
VCE = 10 Vdc, TA = 25°C
10
10
8.0
8.0
NF, NOISE FIGURE (dB)
IC = −1.0 mA, Rs = 430
−500 A, Rs = 560
−50 A, Rs = 2.7 k
−100 A, Rs = 1.6 k
6.0
4.0
Rs = OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10
20
50
4.0
100
200
500 1.0 k 2.0 k
5.0 k 10 k
20 k
f, FREQUENCY (kHz)
Rs, SOURCE RESISTANCE (OHMS)
Figure 7. Frequency Effects
Figure 8. Source Resistance Effects
20
C, CAPACITANCE (pF)
IC = −50 A
−100 A
−500 A
−1.0 mA
0
50
100
30
Ceb
10
7.0
5.0
Ccb
3.0
2.0
−0.1
6.0
2.0
−0.2 −0.3 −0.5
−1.0
−2.0 −3.0 −5.0
−10
−20 −30
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)
NF, NOISE FIGURE (dB)
f = 1.0 kHz
50 k
400
300
200
100
80
VCE = −20 V
TJ = 25°C
60
40
30
20
−1.0 −2.0
−5.0
−10
−20
−50
−100 −200
−500 −1000
REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
Figure 10. Current−Gain − Bandwidth Product
+0.5
−1.0
TJ = 25°C
−0.6
0
VBE(sat) @ IC/IB = 10
COEFFICIENT (mV/° C)
V, VOLTAGE (VOLTS)
−0.8
VBE(on) @ VCE = −10 V
−0.4
−0.2
RVC for VCE(sat)
−0.5
−1.0
−1.5
RVB for VBE
−2.0
VCE(sat) @ IC/IB = 10
0
−0.1 −0.2
−0.5 −1.0 −2.0 −5.0 −10 −20
−50 −100 −200
−2.5
−0.1 −0.2 −0.5 −1.0 −2.0
−500
−5.0 −10 −20
−50 −100 −200 −500
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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4
NSCT2907ALT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSCT2907ALT1/D
