NSCT3904LT1G
General Purpose Transistors
NPN Silicon
Features
• These are Pb−Free Devices
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
40
Vdc
Collector −Base Voltage
VCBO
60
Vdc
Emitter −Base Voltage
VEBO
6.0
Vdc
IC
200
mAdc
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Collector Current − Continuous
COLLECTOR
3
1
BASE
2
EMITTER
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR− 5 Board
(Note 1) @TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2)
@TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature
3
PD
RqJA
SOT−23
CASE 318
STYLE 6
1
2
PD
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
MARKING DIAGRAM
394 M G
G
1
394
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping †
NSCT3904LT1G
SOT−23
(Pb−Free)
3000 Tape & Reel
NSCT3904LT3G
SOT−23 10,000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 0
1
Publication Order Number:
NSCT3904LT1/D
NSCT3904LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Collector −Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)
V(BR)CEO
40
−
Vdc
Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0)
V(BR)CBO
60
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
−
Vdc
IBL
−
50
nAdc
ICEX
−
50
nAdc
40
70
100
60
30
−
−
300
−
−
−
−
0.2
0.3
0.65
−
0.85
0.95
OFF CHARACTERISTICS
Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc)
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
HFE
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
VBE(sat)
−
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
fT
300
−
MHz
Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
4.0
pF
Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
8.0
pF
Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hie
1.0
10
kW
Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hre
0.5
8.0
X 10− 4
Small −Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hfe
100
400
−
Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz)
hoe
1.0
40
mmhos
Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k ohms, f = 1.0 kHz)
NF
−
5.0
dB
(VCC = 3.0 Vdc, VBE = − 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
td
−
35
tr
−
35
(VCC = 3.0 Vdc,
IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
ts
−
200
tf
−
50
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
ns
ns
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
DUTY CYCLE = 2%
300 ns
+3 V
+10.9 V
275
10 < t1 < 500 ms
DUTY CYCLE = 2%
10 k
t1
+3 V
+10.9 V
275
10 k
0
−0.5 V
CS < 4 pF*
< 1 ns
1N916
−9.1 V′
< 1 ns
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time
Equivalent Test Circuit
Figure 2. Storage and Fall Time
Equivalent Test Circuit
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2
CS < 4 pF*
NSCT3904LT1G
TYPICAL TRANSIENT CHARACTERISTICS
TJ = 25°C
TJ = 125°C
10
5000
2000
5.0
Q, CHARGE (pC)
CAPACITANCE (pF)
VCC = 40 V
IC/IB = 10
3000
7.0
Cibo
3.0
Cobo
2.0
1000
700
500
QT
300
200
QA
1.0
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
100
70
50
20 30 40
1.0
2.0 3.0
REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Capacitance
IC/IB = 10
50 70 100
200
t r, RISE TIME (ns)
tr @ VCC = 3.0 V
50
30
20
40 V
15 V
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
50
30
20
7
5
200
5.0 7.0 10
20
30
50 70 100
Figure 5. Turn −On Time
Figure 6. Rise Time
IC/IB = 10
IC/IB = 10
IC/IB = 20
100
70
50
10
7
5
7
5
20
30
50 70 100
200
IC/IB = 10
30
20
10
5.0 7.0 10
VCC = 40 V
IB1 = IB2
300
200
IC/IB = 20
30
20
200
500
t′s = ts − 1/8 tf
IB1 = IB2
50
2.0 3.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
100
70
1.0
1.0
IC, COLLECTOR CURRENT (mA)
500
IC/IB = 20
100
70
10
2.0 V
td @ VOB = 0 V
VCC = 40 V
IC/IB = 10
300
200
t f , FALL TIME (ns)
TIME (ns)
100
70
10
t s′ , STORAGE TIME (ns)
30
500
300
200
300
200
20
Figure 4. Charge Data
500
7
5
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 7. Storage Time
Figure 8. Fall Time
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3
200
NSCT3904LT1G
TYPICAL AUDIO SMALL−SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
12
f = 1.0 kHz
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
8
6
SOURCE RESISTANCE = 1.0 k
IC = 50 mA
4
SOURCE RESISTANCE = 500 W
IC = 100 mA
2
0
0.1
0.2
0.4
1.0
2.0
4.0
IC = 1.0 mA
12
NF, NOISE FIGURE (dB)
10
NF, NOISE FIGURE (dB)
14
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
IC = 0.5 mA
10
IC = 50 mA
8
IC = 100 mA
6
4
2
10
20
40
0
100
0.1
0.2
0.4
1.0
2.0
4.0
10
20
f, FREQUENCY (kHz)
RS, SOURCE RESISTANCE (k OHMS)
Figure 9.
Figure 10.
40
100
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
hoe , OUTPUT ADMITTANCE (m mhos)
h fe , CURRENT GAIN
300
200
100
70
50
30
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
50
20
10
5
2
1
10
0.1
0.2
Figure 11. Current Gain
h re , VOLTAGE FEEDBACK RATIO (X 10−4 )
h ie , INPUT IMPEDANCE (k OHMS)
10
5.0
2.0
1.0
0.5
0.1
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
5.0
10
Figure 12. Output Admittance
20
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
10
0.1
Figure 13. Input Impedance
0.2
0.3
0.5
1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 14. Voltage Feedback Ratio
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4
NSCT3904LT1G
TYPICAL STATIC CHARACTERISTICS
h FE , DC CURRENT GAIN (NORMALIZED)
2.0
TJ = +125°C
VCE = 1.0 V
+25°C
1.0
0.7
−55 °C
0.5
0.3
0.2
0.1
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
200
IC, COLLECTOR CURRENT (mA)
VCE , COLLECTOR EMITTER VOLTAGE (VOLTS)
Figure 15. DC Current Gain
1.0
TJ = 25°C
0.8
IC = 1.0 mA
10 mA
30 mA
100 mA
0.6
0.4
0.2
0
0.01
0.02
0.03
0.05
0.07
0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
5.0
7.0
10
IB, BASE CURRENT (mA)
Figure 16. Collector Saturation Region
1.0
1.2
TJ = 25°C
VBE(sat) @ IC/IB =10
0.8
VBE @ VCE =1.0 V
0.6
0.4
VCE(sat) @ IC/IB =10
qVC FOR VCE(sat)
0
−55 °C TO +25°C
−0.5
−55 °C TO +25°C
−1.0
+25°C TO +125°C
0.2
0
+25°C TO +125°C
0.5
COEFFICIENT (mV/° C)
V, VOLTAGE (VOLTS)
1.0
qVB FOR VBE(sat)
−1.5
1.0
2.0
5.0
10
20
50
100
−2.0
200
0
20
40
60
80
100
120
140
160
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 17. “ON” Voltages
Figure 18. Temperature Coefficients
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5
180 200
NSCT3904LT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NSCT3904LT1/D
