NSD350HT1G

NSD350H High Voltage Switching Diode The NSD350H is a high voltage switching diode in a SOD−323 surface mount package. Features www.onsemi.com • Small Footprint Package, SOD−323 • NSV Prefix for Automotive and Other Applications Requiring • Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−free Device, Halogen Free/BFR Free and are RoHS Compliant 1 CATHODE 2 ANODE MARKING DIAGRAM Typical Applications • • • • • Flat Panel TVs Power Supply Industrial Wireless Handsets Automotive Modules SOD−323 CASE 477 STYLE 1 AJ = Specific Device Code M = Date Code G = Pb−Free Package MAXIMUM RATINGS Single Diode (TA = 25°C) Symbol Max Unit Reverse Voltage VR 350 V Forward Current (DC) IF 200 mA Rating Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 10 s t = 100 s t = 1 ms t = 10 ms IFSM A 12 5 2 1.5 Symbol (Note: Microdot may be in either location) ORDERING INFORMATION Device NSD350HT1G NSVD350HT1G Package Shipping† SOD−323 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. THERMAL CHARACTERISTICS Characteristic AJ MG G Max Unit 250 2 mW mW/°C Total Device Dissipation TA = 25°C Derate above 25°C PD (Note 1) Thermal Resistance, Junction to Ambient RJA (Note 1) 500 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−4 100 mm2 2 oz Cu PCB © Semiconductor Components Industries, LLC, 2015 April, 2015 − Rev. 0 1 Publication Order Number: NSD350H/D NSD350H Table 1. ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Reverse Breakdown Voltage (IR = 10 µA) Symbol Min V(BR)R 350 Typ Max Unit V Reverse Leakage (VR = 300 V) IR 150 nA Reverse Leakage (VR = 350 V) IR 5 A Forward Voltage (IF = 100 mA) VF 1.1 V Total Capacitance (VR = 0 V, f = 1.0 MHz) CT 5.0 pF Reverse Recovery Time (IF = IR = 10 mA, IR(rec) = 1.0 mA, Figure 1) trr 55 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820  +10 V 2k 100 H 0.1 F IF tr 0.1 F tp T IF trr 10% T DUT 50  OUTPUT PULSE GENERATOR 50  INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR INPUT SIGNAL OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2 NSD350H TYPICAL CHARACTERISTICS 1E−04 IF, FORWARD CURRENT (mA) 150°C IR, LEAKAGE CURRENT (A) 1E−05 125°C 1E−06 85°C 1E−07 1E−08 25°C 1E−09 −55°C 1E−10 1E−11 150°C 100 125°C 10 85°C 1 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 −55°C 0.8 0.9 VR, REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) Figure 2. Reverse Leakage Current Figure 3. Forward Voltage 2.0 CT, TOTAL CAPACITANCE (pF) 0 25°C 1.8 TJ = 25°C f = 1 MHz 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 4. Total Capacitance www.onsemi.com 3 25 30 1.0 1.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 1 STYLE 1 SOD−323 CASE 477−02 ISSUE H 2 SCALE 4:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E A3 A C NOTE 3 DATE 13 MAR 2007 1 STYLE 2 L A1 NOTE 5 MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* XX M 0.63 0.025 STYLE 1 0.83 0.033 *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98ASB17533C SOD−323 STYLE 2 XX = Specific Device Code M = Date Code 1.60 0.063 DOCUMENT NUMBER: XX M STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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