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NSD914XV2T5G

NSD914XV2T5G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOD523(SC-79)

  • 描述:

    SS SOD523 SWCH DIODE TR

  • 详情介绍
  • 数据手册
  • 价格&库存
NSD914XV2T5G 数据手册
NSD914XV2 High-Speed Switching Diode Features • • • • • High−Speed Switching Applications Lead Finish: 100% Matte Sn (Tin) Qualified Maximum Reflow Temperature: 260°C Extremely Small SOD−523 Package These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com 1 CATHODE Symbol Max Unit Reverse Voltage VR 100 V Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current MARKING DIAGRAM 2 MAXIMUM RATINGS (TA = 25°C) Rating 2 ANODE Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 SOD−523 CASE 502 5D M G 1 5D MG G 2 = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Range Symbol Max Unit 200 1.57 mW mW/°C Device Package Shipping† RqJA 635 °C/W NSD914XV2T1G TJ, Tstg −55 to 150 °C SOD−523 (Pb−Free) 3000 / Tape & Reel NSD914XV2T5G SOD−523 (Pb−Free) 8000 / Tape & Reel PD 1. FR−4 @ Minimum Pad. Characteristic Symbol Min Max Unit V(BR) 100 − Vdc − − 25 5.0 nAdc mAdc OFF CHARACTERISTICS Reverse Breakdown Voltage (IBR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0 V, f = 1.0 MHz) CD − 4.0 pF Forward Voltage (IF = 10 mAdc) VF − 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) trr − 4.0 ns © Semiconductor Components Industries, LLC, 2012 August, 2018 − Rev. 5 1 ORDERING INFORMATION †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: NSD914XV2T1/D NSD914XV2 820 Ω +10 V 2.0 k tr 0.1 μF tp IF 100 μH IF t trr 10% t 0.1 μF 90% DUT 50 Ω INPUT SAMPLING OSCILLOSCOPE 50 Ω OUTPUT PULSE GENERATOR iR(REC) = 1.0 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; MEASURED at iR(REC) = 1.0 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 100 10 I R , REVERSE CURRENT (m A) TA = 85°C TA = -40°C 10 TA = 25°C 1.0 TA = 125°C 1.0 TA = 85°C 0.1 TA = 55°C 0.01 TA = 25°C 0.1 0.2 0.4 0.6 0.8 1.0 0.001 1.2 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current 0.68 C D , DIODE CAPACITANCE (pF) I F, FORWARD CURRENT (mA) TA = 150°C 0.64 0.60 0.56 0.52 0 2.0 4.0 6.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance www.onsemi.com 2 8.0 40 50 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 2 2 1 1 STYLE 1 STYLE 2 SOD−523 CASE 502 ISSUE E SCALE 4:1 −X− D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. −Y− E 2X b 0.08 1 M DATE 28 SEP 2010 2 X Y DIM A b c D E HE L L2 TOP VIEW A c HE RECOMMENDED SOLDERING FOOTPRINT* SIDE VIEW 2X 2X 2X MILLIMETERS MIN NOM MAX 0.50 0.60 0.70 0.25 0.30 0.35 0.07 0.14 0.20 1.10 1.20 1.30 0.70 0.80 0.90 1.50 1.60 1.70 0.30 REF 0.15 0.20 0.25 L 0.48 PACKAGE OUTLINE L2 1.80 2X 0.40 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. BOTTOM VIEW XX M XX 1 2 1 STYLE 1 XX M M GENERIC MARKING DIAGRAM* 2 STYLE 2 = Specific Device Code Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: DESCRIPTION: STYLE 2: NO POLARITY 98AON11524D SOD−523 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales
NSD914XV2T5G
物料型号为 NSD914XV2T1G 和 NSD914XV2T5G。

这是一颗高速开关二极管,具有以下特点: - 高速开关应用 - 100% 雾锡(Tin)铅完成 - 符合RoHS标准的无铅、无卤素/无BFR - 非常小的SOD-523封装

最大额定值包括: - 反向电压:100V - 正向电流:200mA - 峰值正向浪涌电流:500mA

热特性包括: - 总器件耗散:200mW(在FR-5板上,TA=25°C时) - 热阻(结到环境):635°C/W - 结和存储温度范围:-55°C 至 150°C

订购信息显示,NSD914XV2T1G 和 NSD914XV2T5G 均采用无铅SOD-523封装,分别以3000/卷和8000/卷的形式发货。


电气特性包括: - 反向击穿电压:100V - 反向电压漏电流:在20V和75V直流下分别为25nA和5.0uA - 二极管电容:在0V反向电压和1.0MHz频率下为4.0pF - 正向电压:在10mA正向电流下为1.0V - 反向恢复时间:在10mA正向和反向电流下为4.0ns

封装信息为SOD-523 CASE 502,提供了详细的机械案例轮廓和封装尺寸。


应用信息包括一个等效测试电路图,用于测量恢复时间,以及正向电压和漏电流随温度变化的图表。


以上信息摘自于PDF文档,由onsemi提供。
NSD914XV2T5G 价格&库存

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NSD914XV2T5G
  •  国内价格 香港价格
  • 1+1.641001+0.19700
  • 1000+1.557101000+0.18690
  • 2500+1.086402500+0.13040
  • 8000+0.336608000+0.04040
  • 24000+0.3018024000+0.03630
  • 48000+0.2755048000+0.03310
  • 96000+0.2671096000+0.03210

库存:0