NSI45090JDT4G

NSI45090JDT4G Adjustable Constant Current Regulator & LED Driver 45 V, 90 − 160 mA + 15%, 2.7 W Package The adjustable constant current regulator (CCR) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs (similar to Constant Current Diode, CCD). The CCR is based on Self-Biased Transistor (SBT) technology and regulates current over a wide voltage range. It is designed with a negative temperature coefficient to protect LEDs from thermal runaway at extreme voltages and currents. The CCR turns on immediately and is at 20% of regulation with only 0.5 V Vak. The Radj pin allows Ireg(SS) to be adjusted to higher currents by attaching a resistor between Radj (Pin 3) and the Cathode (Pin 4). The Radj pin can also be left open (No Connect) if no adjustment is required. It requires no external components allowing it to be designed as a high or low−side regulator. The high anodecathode voltage rating withstands surges common in Automotive, Industrial and Commercial Signage applications. This device is available in a thermally robust package and is qualified to stringent AEC−Q101 standard, which is lead-free RoHS compliant and uses halogen-free molding compound, and UL94−V0 certified. http://onsemi.com Ireg(SS) = 90 − 160 mA @ Vak = 7.5 V Anode 1 3 Radj 4 Cathode 4 1 2 Features • • • • • • • • • • • Robust Power Package: 2.7 Watts Adjustable up to 160 mA Wide Operating Voltage Range Immediate Turn-On Voltage Surge Suppressing − Protecting LEDs UL94−V0 Certified SBT (Self−Biased Transistor) Technology Negative Temperature Coefficient Eliminates Additional Regulation NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Automobile: Chevron Side Mirror Markers, Cluster, Display & • • • • Instrument Backlighting, CHMSL, Map Light AC Lighting Panels, Display Signage, Decorative Lighting, Channel Lettering Switch Contact Wetting Application Note AND8391/D − Power Dissipation Considerations Application Note AND8349/D − Automotive CHMSL © Semiconductor Components Industries, LLC, 2014 April, 2014 − Rev. 3 1 3 DPAK CASE 369C MARKING DIAGRAM 1 A Radj Y WW NSI90J G YWW NSI 90JG C = Year = Work Week = Specific Device Code = Pb−Free Package ORDERING INFORMATION Device Package Shipping† NSI45090JDT4G DPAK (Pb−Free) 2500/Tape & Reel NSV45090JDT4G DPAK (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NSI45090JD/D NSI45090JDT4G MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Anode−Cathode Voltage Symbol Value Vak Max 45 V VR 500 mV TJ, Tstg −55 to +175 Reverse Voltage Operating and Storage Junction Temperature Range ESD Rating: Human Body Model Machine Model ESD Unit °C Class 3A (4000 V) Class B (200 V) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Steady State Current @ Vak = 7.5 V (Note 1) Voltage Overhead (Note 2) Symbol Min Ireg(SS) 76.5 Voverhead Pulse Current @ Vak = 7.5 V (Note 3) Ireg(P) Capacitance @ Vak = 7.5 V (Note 4) C Capacitance @ Vak = 0 V (Note 4) C 1. 2. 3. 4. Ireg(SS) steady state is the voltage (Vak) applied for a time duration ≥ 80 sec, using FR−4 @ 300 Voverhead = Vin − VLEDs. Voverhead is typical value for 65% Ireg(SS). Ireg(P) non−repetitive pulse test. Pulse width t ≤ 1 msec. f = 1 MHz, 0.02 V RMS. Figure 1. CCR Voltage−Current Characteristic http://onsemi.com 2 Typ Max Unit 90 103.5 mA 1.8 86.2 mm2 103 V 119.6 mA 17 pF 70 pF 2 oz. Copper traces, in still air. NSI45090JDT4G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit PD 1771 14.16 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 5) RθJA 70.6 °C/W Thermal Reference, Junction−to−Lead 4 (Note 5) RψJL4 6.8 °C/W PD 2083 16.67 mW mW/°C RθJA 60 °C/W RψJL4 6.3 °C/W PD 2080 16.64 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 7) RθJA 60.1 °C/W Thermal Reference, Junction−to−Lead 4 (Note 7) RψJL4 6.5 °C/W PD 2441 19.53 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 8) RθJA 51.2 °C/W Thermal Reference, Junction−to−Lead 4 (Note 8) RψJL4 5.9 °C/W PD 2309 18.47 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 9) RθJA 54.1 °C/W Thermal Reference, Junction−to−Lead 4 (Note 9) RψJL4 6.2 °C/W PD 2713 21.71 mW mW/°C Thermal Resistance, Junction−to−Ambient (Note 10) RθJA 46.1 °C/W Thermal Reference, Junction−to−Lead 4 (Note 10) RψJL4 5.7 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C Total Device Dissipation (Note 5) TA = 25°C Derate above 25°C Total Device Dissipation (Note 6) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 6) Thermal Reference, Junction−to−Lead 4 (Note 6) Total Device Dissipation (Note 7) TA = 25°C Derate above 25°C Total Device Dissipation (Note 8) TA = 25°C Derate above 25°C Total Device Dissipation (Note 9) TA = 25°C Derate above 25°C Total Device Dissipation (Note 10) TA = 25°C Derate above 25°C NOTE: Lead measurements are made by non−contact methods such as IR with treated surface to increase emissivity to 0.9. Lead temperature measurement by attaching a T/C may yield values as high as 30% higher °C/W values based upon empirical measurements and method of attachment. 5. FR−4 @ 300 mm2, 1 oz. copper traces, still air. 6. FR−4 @ 300 mm2, 2 oz. copper traces, still air. 7. FR−4 @ 500 mm2, 1 oz. copper traces, still air. 8. FR−4 @ 500 mm2, 2 oz. copper traces, still air. 9. FR−4 @ 700 mm2, 1 oz. copper traces, still air. 10. FR−4 @ 700 mm2, 2 oz. copper traces, still air. http://onsemi.com 3 NSI45090JDT4G TYPICAL PERFORMANCE CURVES 110 110 TA = −40°C 100 90 TA = 25°C 80 TA = 85°C 70 TA = 125°C 60 50 [ −0.223 mA/°C typ @ Vak = 7.5 V Ireg(P), PULSE CURRENT (mA) Ireg(SS), STEADY STATE CURRENT (mA) Minimum FR−4 @ 300 mm2, 2 oz Copper Trace, Still Air [ −0.144 mA/°C typ @ Vak = 7.5 V [ −0.155 mA/°C typ @ Vak = 7.5 V 40 30 20 10 0 1 3 4 5 6 7 8 2 Vak, ANODE−CATHODE VOLTAGE (V) 9 TA = 25°C Radj = Open 100 95 90 Non−Repetitive Pulse Test DC Test Steady State, Still Air, Radj = Open 0 105 85 3.0 10 4.0 5.0 6.0 7.0 8.0 9.0 Vak, ANODE−CATHODE VOLTAGE (V) Figure 3. Pulse Current (Ireg(P)) vs. Anode−Cathode Voltage (Vak) 105 Ireg, CURRENT REGULATION (mA) Ireg(SS), STEADY STATE CURRENT (mA) Figure 2. Steady State Current (Ireg(SS)) vs. Anode−Cathode Voltage (Vak) Vak @ 7.5 V TA = 25°C Radj = Open 100 95 90 85 80 75 85 90 95 100 105 110 Ireg(P), PULSE CURRENT (mA) 115 104 103 102 101 100 99 98 97 96 95 94 93 92 91 90 89 Vak @ 7.5 V TA = 25°C Radj = Open 0 120 Vak @ 7.5 V TA = 25°C POWER DISSIPATION (mW) Ireg(SS), STEADY STATE CURRENT (mA) 160 140 130 120 110 100 90 80 1 10 100 10 20 30 50 40 TIME (s) 60 70 80 90 Figure 5. Current Regulation vs. Time Figure 4. Steady State Current vs. Pulse Current Testing 150 10 1000 4800 700 mm2/2 oz 4500 4200 3900 500 mm2/2 oz 3600 3300 3000 300 mm2/2 oz 2700 2400 2100 2 1800 700 mm /1 oz 1500 500 mm2/1 oz 1200 900 300 mm2/1 oz 600 300 40 −40 −20 0 20 60 80 100 120 140 TA, AMBIENT TEMPERATURE (°C) Radj (W), Max Power 125 mW Figure 6. Ireg(SS) vs. Radj Figure 7. Power Dissipation vs. Ambient Temperature @ TJ = 1755C http://onsemi.com 4 NSI45090JDT4G APPLICATIONS INFORMATION The CCR is a self biased transistor designed to regulate the current through itself and any devices in series with it. The device has a slight negative temperature coefficient, as shown in Figure 2 – Tri Temp. (i.e. if the temperature increases the current will decrease). This negative temperature coefficient will protect the LEDS by reducing the current as temperature rises. The CCR turns on immediately and is typically at 20% of regulation with only 0.5 V across it. The device is capable of handling voltage for short durations of up to 45 V so long as the die temperature does not exceed 175°C. The determination will depend on the thermal pad it is mounted on, the ambient temperature, the pulse duration, pulse shape and repetition. Single LED String The CCR can be placed in series with LEDs as a High Side or a Low Side Driver. The number of the LEDs can vary from one to an unlimited number. The designer needs to calculate the maximum voltage across the CCR by taking the maximum input voltage less the voltage across the LED string (Figures 8 and 9). Figure 9. Higher Current LED Strings Two or more fixed current CCRs can be connected in parallel. The current through them is additive (Figure 10). Figure 8. Figure 10. http://onsemi.com 5 NSI45090JDT4G Other Currents LEDs on and off for a portion of a single cycle. This on/off cycle is called the Duty cycle (D) and is expressed by the amount of time the LEDs are on (Ton) divided by the total time of an on/off cycle (Ts) (Figure 13). The adjustable CCR can be placed in parallel with any other CCR to obtain a desired current. The adjustable CCR provides the ability to adjust the current as LED efficiency increases to obtain the same light output (Figure 11). Figure 13. The current through the LEDs is constant during the period they are turned on resulting in the light being consistent with no shift in chromaticity (color). The brightness is in proportion to the percentage of time that the LEDs are turned on. Figure 14 is a typical response of Luminance vs Duty Cycle. 6000 ILLUMINANCE (lx) 5000 4000 Figure 11. 3000 Dimming using PWM The dimming of an LED string can be easily achieved by placing a BJT in series with the CCR (Figure 12). 2000 Lux Linear 1000 0 0 10 20 30 40 50 60 70 DUTY CYCLE (%) 80 90 100 Figure 14. Luminous Emmitance vs. Duty Cycle Reducing EMI Designers creating circuits switching medium to high currents need to be concerned about Electromagnetic Interference (EMI). The LEDs and the CCR switch extremely fast, less than 100 nanoseconds. To help eliminate EMI, a capacitor can be added to the circuit across R2. (Figure 12) This will cause the slope on the rising and falling edge on the current through the circuit to be extended. The slope of the CCR on/off current can be controlled by the values of R1 and C1. The selected delay / slope will impact the frequency that is selected to operate the dimming circuit. The longer the delay, the lower the frequency will be. The delay time should not be less than a 10:1 ratio of the minimum on time. The frequency is also impacted by the resolution and dimming steps that are required. With a delay of 1.5 microseconds on the rise and the fall edges, the minimum on time would be 30 microseconds. If the design called for a resolution of 100 dimming steps, then a total duty cycle time (Ts) of 3 milliseconds or a frequency of 333 Hz will be required. Figure 12. The method of pulsing the current through the LEDs is known as Pulse Width Modulation (PWM) and has become the preferred method of changing the light level. LEDs being a silicon device, turn on and off rapidly in response to the current through them being turned on and off. The switching time is in the order of 100 nanoseconds, this equates to a maximum frequency of 10 Mhz, and applications will typically operate from a 100 Hz to 100 kHz. Below 100 Hz the human eye will detect a flicker from the light emitted from the LEDs. Between 500 Hz and 20 kHz the circuit may generate audible sound. Dimming is achieved by turning the http://onsemi.com 6 NSI45090JDT4G Thermal Considerations P D(MAX) + As power in the CCR increases, it might become necessary to provide some thermal relief. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. When the device has good thermal conductivity through the PCB, the junction temperature will be relatively low with high power applications. The maximum dissipation the device can handle is given by: T J(MAX) * T A R qJA Referring to the thermal table on page 2 the appropriate RqJA for the circuit board can be selected. AC Applications The CCR is a DC device; however, it can be used with full wave rectified AC as shown in application notes AND8433/D and AND8492/D and design notes DN05013/D and DN06065/D. Figure 15 shows the basic circuit configuration. Figure 15. Basic AC Application http://onsemi.com 7 NSI45090JDT4G PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE E A E C A b3 B c2 4 L3 D 1 2 Z Z H DETAIL A 3 L4 NOTE 7 b2 e b TOP VIEW c SIDE VIEW 0.005 (0.13) M NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW BOTTOM VIEW ALTERNATE CONSTRUCTION C H L2 GAUGE PLANE C L L1 DETAIL A SEATING PLANE A1 ROTATED 905 CW INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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