NSL12AW

NSL12AW High Current Surface Mount PNP Silicon Low VCE(sat) Transistor for Battery Operated Applications Features: http://onsemi.com • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size 12 VOLTS 3.0 AMPS PNP TRANSISTOR Benefits: • High Specific Current and Power Capability Reduces Required PCB Area • Reduced Parasitic Losses Increases Battery Life MAXIMUM RATINGS (TA = 25°C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current – Continuous Collector Current – Peak Electrostatic Discharge Symbol VCEO VCBO VEBO IC ICM ESD Max –12 –12 –5.0 –2.0 –3.0 Unit Vdc Vdc Vdc Adc 6 3 BASE COLLECTOR 1, 2, 5, 6 4 EMITTER 5 4 HBM Class 3 MM Class C 1 2 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Lead 6 Total Device Dissipation (Single Pulse < 10 sec.) Junction and Storage Temperature Range 1. FR–4, Minimum Pad, 1 oz Coverage 2. FR–4, 1″ Pad, 1 oz Coverage Symbol PD (Note 1) Max 450 3.6 RθJA (Note 1) PD (Note 2) 275 650 5.2 RθJA (Note 2) RθJL PD Single TJ, Tstg 192 105 1.4 –55 to +150 Unit mW mW/°C °C/W CASE 419B SOT–363/SC–88 STYLE 20 DEVICE MARKING mW mW/°C °C/W °C/W W °C 11d 11 = Specific Device Code d = Date Code ORDERING INFORMATION Device NSL12AWT1 Package SOT–416 Shipping 3000/Tape & Reel © Semiconductor Components Industries, LLC, 2002 1 April, 2002 – Rev. 1 Publication Order Number: NSL12AW/D NSL12AW ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typical Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) Collector–Base Breakdown Voltage (IC = –0.1 mAdc, IE = 0) Emitter–Base Breakdown Voltage (IE = –0.1 mAdc, IC = 0) Collector Cutoff Current (VCB = –12 Vdc, IE = 0) Collector–Emitter Cutoff Current (VCES = –12 Vdc, IE = 0) Emitter Cutoff Current (VCES = –5.0 Vdc, IE = 0) V(BR)CEO –12 V(BR)CBO –12 V(BR)EBO –5.0 ICBO – ICES – IEBO – –0.03 –0.1 –0.03 –0.1 mAdc –0.02 –0.1 mAdc –7.0 – mAdc –25 – Vdc –15 – Vdc Vdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = –0.5 A, VCE = –1.5 V) (IC = –0.8 A, VCE = –1.5 V) (IC = –1.0 A, VCE = –1.5 V) Collector–Emitter Saturation Voltage (Note 3) (IC = –0.5 A, IB = –10 mA) (IC = –0.8 A, IB = –16 mA) (IC = –1.0 A, IB = –20 mA) Base–Emitter Saturation Voltage (Note 3) (IC = –1.0 A, IB = –20 mA) Base–Emitter Turn–on Voltage (Note 3) (IC = –1.0 A, VCE = –1.5 V) Cutoff Frequency (IC = –100 mA, VCE = –5.0 V, f = 100 MHz) Output Capacitance (VCB = –1.5 V, f = 1.0 MHz) 3. Pulsed Condition: Pulse Width < 300 msec, Duty Cycle < 2% hFE 100 100 100 VCE(sat) – – – VBE(sat) – VBE(on) – fT – Cobo – 50 65 100 – pF –0.81 –0.95 MHz –0.84 –0.95 V –0.10 –0.14 –0.17 –0.160 –0.235 –0.290 V 180 165 160 – 300 – V http://onsemi.com 2 NSL12AW VCE, COLLECTOR EMITTER VOLTAGE (V) 0.5 VCE, COLLECTOR EMITTER VOLTAGE (V) 0.5 0.4 2A 0.3 0.4 0.3 0.2 1A 800 mA IC = 100 mA 500 mA 10 IB, BASE CURRENT (mA) 100 0.2 IC/IB = 100 0.1 0 1 0.1 0 0.001 0.01 0.1 IC/IB = 10 1 IC, COLLECTOR CURRENT (AMPS) Figure 1. Collector Emitter Voltage versus Base Current Figure 2. Collector Emitter Voltage versus Collector Current 400 hFE, DC CURRENT GAIN 1.0 VBE, BASE EMITTER VOLTAGE (V) 125°C VCE = 1.5 V 0.9 0.8 0.7 25°C 0.6 0.5 0.4 0.3 0.001 0.01 0.1 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (AMPS) 125°C VCE = 1.5 V 1 TA = –55°C 300 200 25°C 100 TA = –55°C 0 IC, COLLECTOR CURRENT (AMPS) VBE(sat), BASE EMITTER SATURATION VOLTAGE (V) Figure 3. DC Current Gain versus Collector Current Figure 4. Base Emitter Voltage versus Collector Current 1.0 IC, COLLECTOR CURRENT (A) 10 0.9 IC/IB = 10 dc 1 1s 100 ms 10 ms 1 ms 0.8 IC/IB = 100 0.7 0.1 SINGLE PULSE TA = 25°C 0.01 0.1 1 10 0.6 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 5. Base Emitter Saturation Voltage versus Base Current Figure 6. Safe Operating Area http://onsemi.com 3 NSL12AW r(t), MINIMUM PAD NORMALIZED TRANSIENT THERMAL RESISTANCE 1 D = 0.50 D = 0.20 0.1 D = 0.10 D = 0.05 D = 0.02 0.01 D = 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 7. Normalized Thermal Response PACKAGE DIMENSIONS A G SOT–363/SC–88 CASE 419B–02 ISSUE H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 6 5 4 S 1 2 3 –B– D 6 PL 0.2 (0.008) N M B M J C STYLE 20 PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR H K ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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