NSM21356DW6T1G

NSM21356DW6T1G Dual Complementary Transistors General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network NSM21356DW6T1G contains a single PNP transistor and a monolithic bias network NPN transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to replace multiple transistors and resistors on customer boards by integrating these components into a single device. NSM21356DW6T1G is housed in a SC-88/SOT-363 package which is ideal for low power surface mount applications in space constrained applications. Features (3) http://onsemi.com (2) (1) Q1 Q2 R2 (4) R1 (5) (6) • • • • • • • • • • Simplifies Circuit Design Reduces Board Space Reduces Component Count Q1: NPN BRT, R1 = R2 = 47 k Q2: PNP This is a Pb-Free Device 6 1 SC-88/SOT-363 CASE 419B STYLE 1 Applications Logic Switching Amplification Driver Circuits Interface Circuits MARKING DIAGRAM 6 N2 M G G 1 Symbol VCBO VCEO IC Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 50 50 100 Value - 80 - 65 - 5.0 -100 Unit Vdc Vdc mAdc Unit Vdc Vdc Vdc mAdc N2 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating - Q1 (NPN BRT) Collector‐Base Voltage Collector‐Emitter Voltage Collector Current Rating - Q2 (PNP) Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous ORDERING INFORMATION Device NSM21356DW6T1G Package Shipping† Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. SC-88 3000/Tape & Reel (Pb-Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 1 March, 2008 - Rev. 0 Publication Order Number: NSM21356DW6/D NSM21356DW6T1G THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance, Junction‐to‐Ambient Characteristic (Both Junctions Heated) Total Device Dissipation, TA = 25°C Derate above 25°C Thermal Resistance, Junction‐to‐Ambient Junction and Storage Temperature 1. FR-4 @ Minimum Pad of 1.45 mm2, 1 oz Cu. Symbol PD 180 (Note 1) 1.44 (Note 1) RqJA Symbol PD 230 1.83 RqJA TJ, Tstg 544 - 55 to +150 mW mW/°C °C/W °C 692 (Note 1) Max mW mW/°C °C/W Unit Max Unit ELECTRICAL CHARACTERISTICS - Q1 NPN BRT (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector‐Base Cutoff Current (VCB = 50 V, IE = 0) Collector‐Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter‐Base Cutoff Current (VEB = 6.0 V, IC = 0) Collector‐Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector‐Emitter Breakdown Voltage (Note 2) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 2) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector‐Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio 2. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% hFE VCE(sat) VOL VOH R1 R1/R2 80 4.9 32.9 0.8 140 47 1.0 0.25 0.2 61.1 1.2 Vdc Vdc Vdc kW ICBO ICEO IEBO V(BR)CBO V(BR)CEO 50 50 100 500 0.1 nAdc nAdc mAdc Vdc Vdc Symbol Min Typ Max Unit http://onsemi.com 2 NSM21356DW6T1G ELECTRICAL CHARACTERISTICS - Q2 PNP (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = -10 mA) Collector - Emitter Breakdown Voltage (IC = -10 mA, VEB = 0) Collector - Base Breakdown Voltage (IC = -10 mA) Emitter - Base Breakdown Voltage (IE = -1.0 mA) Collector Cutoff Current (VCB = -30 V) Collector Cutoff Current (VCB = -30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = -10 mA, VCE = -5.0 V) (IC = -2.0 mA, VCE = -5.0 V) Collector - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) (IC = -100 mA, IB = -5.0 mA) Base - Emitter On Voltage (IC = -2.0 mA, VCE = -5.0 V) (IC = -10 mA, VCE = -5.0 V) hFE 220 VCE(sat) VBE(sat) VBE(on) -0.6 -0.75 -0.82 -0.7 -0.9 V -0.3 -0.65 V 150 290 475 V V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO -65 -80 -80 -5.0 -15 -4.0 V V V V nA mA Symbol Min Typ Max Unit 300 PD, POWER DISSIPATION (mW) 250 200 150 100 50 0 - 50 RqJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve http://onsemi.com 3 NSM21356DW6T1G PACKAGE DIMENSIONS SC-88 (SOT-363) CASE 419B-02 ISSUE V e NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. 4 MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 D 6 5 HE 1 2 3 -E- b 6 PL 0.2 (0.008) M E M A3 C A DIM A A1 A3 b C D E e L HE STYLE 1: PIN 1. 2. 3. 4. 5. 6. A1 L SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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