NSM3005NZ
Small Signal BJT and
MOSFET
30 V, 500 mA, PNP BJT with 20 V, 224 mA,
N−Channel MOSFET
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Features
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MARKING
DIAGRAM
Typical Applications
• Portable Devices
6
1
Q1 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
V
Collector–Base Voltage
VCBO
40
V
Emitter–Base Voltage
VEBO
5.0
V
Collector Current
IC
500
mA
Base Current
IB
50
mA
UDFN6
CASE 517AT
mCOOLt
1
AE MG
G
AE = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
PIN CONNECTIONS
Q2 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Symbol
Value
Unit
VDSS
20
V
VGS
±8
V
ID
224
mA
Steady
State
TA = 25°C
TA = 85°C
162
t≤5s
TA = 25°C
241
Pulsed Drain Current
Tp = 10 ms
Source Current (Body Diode)
IDM
673
mA
IS
120
mA
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance
Junction−to−Ambient (Note 1)
Total Power Dissipation @ TA = 25°C
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Symbol
Value
Unit
RqJA
PD
245
0.8
°C/W
W
TJ, TSTG
−55 to
150
°C
TL
260
°C
Pin 6
BJT
Collector
Pin 1
BJT
Emitter
BJT
Collector
Pin 5
MOSFET
Gate
Pin 2
BJT
Base
MOSFET
Drain
Pin 4
MOSFET
Source
Pin 3
MOSFET
Drain
Bottom View
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
ORDERING INFORMATION
Device
Package
Shipping†
NSM3005NZTAG
UDFN6
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
October, 2018 − Rev. 3
1
Publication Order Number:
NSM3005NZ/D
NSM3005NZ
Q1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V(BR)CBO
IC = 100 mA
40
−
−
V
Collector–Emitter Breakdown Voltage
V(BR)CEO
IC = 10 mA
30
−
−
V
Emitter–Base Breakdown Voltage
V(BR)EBO
IE = 100 mA
5.0
−
−
V
OFF CHARACTERISTICS
Collector Cutoff Current
ICBO
VCB = 25 V, IE = 0 A
−
−
1.0
mA
Emitter Cutoff Current
IEBO
VEB = 5.0 V, IC = 0 A
−
−
10
mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
hFE
VCE = 3.0 V, IC = 30 mA
20
−
100
VCE = 3.0 V, IC = 100 mA
20
−
100
VCE = 3.0 V, IC = 500 mA
20
−
100
IC = 500 mA, IB = 50 mA
−
−
0.4
V
Collector–Emitter Saturation Voltage
VCE(sat)
Base–Emitter Saturation Voltage
VBE(sat)
IC = 500 mA, IB = 50 mA
−
−
1.1
V
Base–Emitter Turn–On Voltage
VBE(on)
VCE = 1.0 V, IC = 500 mA
−
−
1.0
V
Test Condition
Min
Typ
Max
Unit
Q2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
20
−
−
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
ID = −250 µA, ref to 25°C
−
19
−
mV/°C
Zero Gate Votlage Drain Current
IDSS
VGS = 0 V, VDS = 16 V, TJ = 25°C
−
−
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±8.0 V
−
−
±2.0
mA
VGS(TH)
VGS = VDS, ID = 250 mA
0.4
−
1.0
V
VGS(TH)/TJ
−
−
1.9
−
mV/°C
RDS(ON)
VGS = 4.5 V, ID = 100 mA
−
0.65
1.4
W
VGS = 2.5 V, ID = 50 mA
−
0.9
1.9
VGS = 1.8 V, ID = 20 mA
−
1.1
2.2
1.4
4.3
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS = 1.5 V, ID = 10 mA
Forward Transconductance
gFS
VDS = 5.0 V, ID = 100 mA
−
0.56
−
S
Input Capacitance
CISS
15.8
−
pF
COSS
f = 1.0 MHz, VGS = 0 V,
VDS = 15 V
−
Output Capacitance
−
3.5
−
Reverse Transfer Capacitance
CRSS
−
2.4
−
−
0.70
−
−
0.05
−
CHARGES AND CAPACITANCES
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
VGS = 4.5 V, VDS = 15 V;
ID = 200 mA
Gate−to−Source Charge
QGS
−
0.14
−
Gate−to−Drain Charge
QGD
−
0.10
−
−
18
−
−
35
−
Td(ON)
−
201
−
tf
−
110
−
−
0.55
1.0
nC
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 4.5 V, VDD = 15 V,
ID = 200 mA, RG = 2 W
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 10 mA
2. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
V
NSM3005NZ
TYPICAL CHARACTERISTICS − Q1
1
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
1000
TJ = 150°C
TJ = 25°C
10
TJ = −55°C
1
0.1
1
10
100
1000
TJ = 150°C
TJ = 25°C
TJ = −55°C
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 1. PNP DC Current Gain vs. Collector
Current
Figure 2. PNP VCE vs. IC
1.0
IC/IB = 10
1.0
VBE(on), BASE−EMITTER (V)
VCE(sat), BASE−EMITTER SATURATION VOLTAGE (V)
0.9
0.8
TJ = −55°C
0.7
TJ = 25°C
0.6
0.5
0.4
TJ = 150°C
0.3
1
10
100
0.9
TJ = −55°C
0.8
0.7
TJ = 25°C
0.6
0.5
TJ = 150°C
0.4
0.3
0.2
1000
VCE = 1 V
1
10
100
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 3. PNP VBE(sat) vs. IC
Figure 4. PNP VBE(on) vs. IC
1.0
1000
1000
0.9
0.8
C, CAPACITANCE (pF)
VCE, COLLECTOR−EMITTER VOLTAGE (V)
0.1
0.01
1.1
0.2
0.1
IC/IB = 10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10 mA
IC = 1.0 mA
500 mA
100 mA
300 mA
0.01
0.1
1
10
Cobo
10
1
100
Cibo
100
0.1
1
10
IB, BASE CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 5. PNP VCE vs. IB
Figure 6. PNP Capacitance
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3
100
NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
3.0 V
0.9
3.5 V
0.8
2.0 V
4.0 V
0.7
1.8 V
4.5 V
0.6
0.5
1.5 V
0.4
0.3
1.2 V
0.2
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1.0
VGS = 2.5 V
0
0.5
1.0
1.5
2.0
2.5
3.0
TJ = 125°C
0.6
0.5
0.4
0.3
0.2
0
1.0
1.5
2.0
2.5
Figure 7. On−Region Characteristics
Figure 8. Transfer Characteristics
TJ = 25°C
ID = 0.1 A
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE VOLTAGE (V)
3.0
5.0
4.5
TJ = 25°C
4.0
VGS = 1.5 V
3.5
3.0
2.5
VGS = 1.8 V
2.0
1.5
VGS = 2.5 V
1.0
0.5
0
VGS = 4.5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9 1.0
ID, DRAIN CURRENT (A)
Figure 9. On−Resistance vs. Gate−to−Source
Voltage
Figure 10. On−Resistance vs. Drain Current
and Gate Voltage
1.8
1000
VGS = 4.5 V
ID = 100 mA
1.7
1.6
TJ = 125°C
1.5
1.4
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−SOURCE
RESISTANCE
0.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.5
1.0
TJ = 25°C
0.7
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5.0
0.5
0
TJ = −55°C
VDS = 5 V
0.8
0.1
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
0.9
ID, DRAIN CURRENT (A)
1.0
VGS = 1.8 V
ID = 20 mA
1.3
1.2
1.1
1.0
100
TJ = 85°C
10
0.9
0.8
0.7
−50
1
−25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. On−Resistance Variation with
Temperature
Figure 12. Drain−to−Source Leakage Current
vs. Voltage
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4
20
NSM3005NZ
TYPICAL CHARACTERISTICS − Q2
25
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS = 0 V
TJ = 25°C
f = 1 MHz
20
Ciss
15
10
Coss
5
0
Crss
0
2
4
6
8
10
12
14
16
20
18
5
12
3
9
2
QGS
QGD
6
VDS = 15 V
TJ = 25°C
ID = 0.2 A
1
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
3
0.8
0
QG, TOTAL GATE CHARGE (nC)
Figure 13. Capacitance Variation
Figure 14. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
IS, SOURCE CURRENT (A)
td(off)
t, TIME (ns)
VGS
VDS
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS = 4.5 V
VDD = 15 V
tf
100
tr
td(on)
VGS(th), GATE−TO−SOURCE THRESHOLD
VOLTAGE (V)
15
4
1000
10
18
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
30
1
10
1
TJ = −55°C
0.1
0.01
100
TJ = 125°C
TJ = 25°C
0.4 0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 15. Resistive Switching Time Variation
vs. Gate Resistance
Figure 16. Diode Forward Voltage vs. Current
0.85
0.75
ID = 250 mA
0.65
0.55
0.45
0.35
−50
−25
0
25
50
75
100
125
150
TJ, TEMPERATURE (°C)
Figure 17. Threshold Voltage
mCOOL is a trademark of Semiconductor Components Industries, LLC.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
UDFN6 1.6x1.6, 0.5P
CASE 517AT−01
ISSUE O
6
1
SCALE 4:1
A
B
D
2X
0.10 C
PIN ONE
REFERENCE
2X
0.10 C
ÉÉ
ÉÉ
ÉÉ
DETAIL A
E
OPTIONAL
CONSTRUCTION
(A3)
A
0.05 C
A1
0.05 C
SIDE VIEW
D1
DETAIL A
6X
ÉÉÉ
ÈÈÈ
EXPOSED Cu
TOP VIEW
6X
C
A1
SEATING
PLANE
OPTIONAL
CONSTRUCTION
L
6
4
6X
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.13 REF
0.20
0.30
1.60 BSC
1.60 BSC
0.50 BSC
1.14
1.34
0.38
0.58
0.54
0.74
0.20
−−−
0.15
0.35
−−−
0.10
1
XX MG
G
E1
6X
A3
DIM
A
A1
A3
b
D
E
e
D1
D2
E1
K
L
L1
GENERIC
MARKING DIAGRAM*
2X
3
1
MOLD CMPD
DETAIL B
D2
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
L
L1
DETAIL B
DATE 02 SEP 2008
XX = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
b
e
0.10 C A B
BOTTOM VIEW
0.05 C
NOTE 3
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
SOLDERMASK DEFINED
MOUNTING FOOTPRINT*
1.34
2X
0.58
6X
0.48
0.74 1.90
1
0.50 PITCH
6X
0.32
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON32372E
6 PIN UDFN, 1.6X1.6, 0.5P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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