NSM80100MT1G

NSM80100MT1G PNP Transistor with Dual Series Switching Diode Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications http://onsemi.com • LCD Control Board • High Speed Switching • High Voltage Switching PNP Transistor with Dual Series Switching Diode MAXIMUM RATINGS − PNP TRANSISTOR Symbol Value Unit Collector −Emitter Voltage Rating VCEO −80 Vdc Collector −Base Voltage VCBO −80 Vdc Emitter −Base Voltage VEBO −4.0 Vdc IC −500 mAdc Collector Current − Continuous 6 D2 1 MAXIMUM RATINGS − SWITCHING DIODE Symbol Value Unit Reverse Voltage Rating VR 100 V Forward Current IF 200 mA Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t < 1 sec t = 1 msec IFSM A 4 6 5 1 2 1.0 20 Operating and Storage Junction Temperature Range TJ, Tstg −55 to +150 3 HBM MM Class Value 3A M4 4000 V ≤ Failure < 8000 V Failure > 400 V THERMAL CHARACTERISTICS Rating Total Device Dissipation FR−5 Board, (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance from Junction−to−Ambient (Note 1) Total Device Dissipation FR−5 Board (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient (Note 2) Junction and Storage Temperature Range Symbol PD RqJA PD D1 Q1 2 3 SC−74 CASE 318F MARKING DIAGRAM 3PN MG G ESD RATINGS Electrostatic Discharge 4 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Rating 5 Max Unit 400 mW mW/°C 313 °C/W 270 mW mW/°C RqJA 463 °C/W TJ, Tstg −55 to +150 °C 3PN M G = Device Code = Date Code* = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping† NSM80100MT1G SC−74 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1. FR−5 = 650 mm2 pad, 2.0 oz Cu. 2. FR−5 = 10 mm2 pad, 2.0 oz Cu. © Semiconductor Components Industries, LLC, 2013 December, 2013 − Rev. 3 1 Publication Order Number: NSM80100M/D NSM80100MT1G Q1: PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max −80 − −4.0 − − −0.1 − −0.1 120 − − −0.25 − −1.2 150 − Min Max 75 − − − − 1.0 30 100 − 1.5 − − − − 715 855 1000 1250 − 4.0 − 1.75 Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) Emitter −Base Breakdown Voltage (IC = −1.0 mA, IB = 0) (IE = −100 mA, IC = 0) Collector Cutoff Current (VCE = −60 V, IB = 0) Collector Cutoff Current (VCB = −80 V, IE = 0) V(BR)CEO V(BR)EBO ICES ICBO V V mA mA ON CHARACTERISTICS (Note 3) DC Current Gain (IC = −10 mA, VCE = −1.0 V) Collector −Emitter Saturation Voltage Base −Emitter Saturation Voltage (IC = −100 mA, IB = −10 mA) (IC = −100 mA, VCE = −1.0 V) hFE VCE(sat) VBE(sat) − V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (Note 4) (IC = −100 mA, VCE = −2.0 V, f = 100 MHz) fT MHz 3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 4. fT is defined as the frequency at which |hfe| extrapolates to unity. D1, D2: SWITCHING DIODE (TA = 25°C unless otherwise noted) Symbol Characteristic Unit OFF CHARACTERISTICS V(BR) Reverse Breakdown Voltage Reverse Voltage Leakage Current Diode Capacitance (VR = 75 V) (VR = 20 V, TJ = 150°C) (VR = 75 V, TJ = 150°C) (VR = 0 V, f = 1.0 MHz) Forward Voltage Reverse Recovery Time Forward Recovery Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 50 mA) (IF = 150 mA) (IF = IR = 10 mA, iR(REC) = 1.0 mA, RL = 100 W) (IF = 10 mA, tr = 20 ns) IR CD VF trr VFR V mA pF mV ns V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. http://onsemi.com 2 NSM80100MT1G 200 100 VCE = -2.0 V TJ = 25°C TJ = 25°C 70 50 100 C, CAPACITANCE (pF) f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TYPICAL CHARACTERISTICS 70 50 Cibo 30 20 Cobo 10 30 7.0 20 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT (mA) 5.0 -0.1 -0.2 -200 Figure 1. Current−Gain — Bandwidth Product 1.0 k 700 500 Figure 2. Capacitance TJ = 125°C VCE = -1.0 V ts h FE, DC CURRENT GAIN t, TIME (ns) -50 -100 400 300 200 100 70 50 tf VCC = -40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 30 20 10 -5.0 -7.0 -10 200 25°C -55°C 100 80 60 tr td @ VBE(off) = -0.5 V -20 -30 -50 -70 -100 -200 -300 IC, COLLECTOR CURRENT (mA) 40 -0.5 -1.0 -2.0 -500 Figure 3. Switching Time -500 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 150°C 25°C −55°C 0.1 0.01 -50 -100 -200 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) Figure 4. DC Current Gain 1 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) -0.5 -1.0 -2.0 -5.0 -10 -20 VR, REVERSE VOLTAGE (VOLTS) 0.001 0.01 0.1 0.9 0.8 −55°C 0.7 25°C 0.6 0.5 0.4 0.3 0.2 1 IC/IB = 10 1.0 150°C 0.0001 IC, COLLECTOR CURRENT (A) 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) Figure 5. Collector Emitter Saturation Voltage vs. Collector Current Figure 6. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 NSM80100MT1G VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.2 1.1 VCE = 1 V 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 TJ = 25°C -0.8 IC = -100 mA IC = -50 mA IC = -250 mA IC = -500 mA -0.6 -0.4 IC = -10 mA -0.2 0 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 IB, BASE CURRENT (mA) Figure 7. Base Emitter Voltage vs. Collector Current Figure 8. Collector Saturation Region 1 IC, COLLECTOR CURRENT (A) -0.8 -1.2 -1.6 -2.0 -1.0 IC, COLLECTOR CURRENT (A) RqVB for VBE -2.4 -2.8 -0.5 -1.0 -2.0 -10 -20 -50 -100 -200 -500 100 mS 10 mS 0.1 Thermal Limit 0.01 0.1 1 Figure 9. Base−Emitter Temperature Coefficient Figure 10. Safe Operating Area 400 300 200 100 0 20 10 VCE, COLLECTOR EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (mA) 0 40 60 80 100 120 140 TEMPERATURE (°C) Figure 11. Operating Temperature Derating http://onsemi.com 4 -50 1 mS 1S 0.001 -5.0 PD, POWER DISSIPATION (mW) R qVB , TEMPERATURE COEFFICIENT (mV/ °C) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL CHARACTERISTICS 160 100 NSM80100MT1G TYPICAL CHARACTERISTICS 100 100 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (mA) 1000 TA = 150°C TA = 125°C TA = 85°C 10 TA = 55°C TA = 25°C 1 TA = −40°C 0.1 TA = −55°C 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TA = 85°C TA = 55°C 0.1 0.01 0.001 TA = 25°C 0 10 20 30 40 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 12. Forward Voltage Figure 13. Leakage Current 60 70 100 0.59 VR, DC REVERSE VOLTAGE (V) Cd, DIODE CAPACITANCE (pF) TA = 125°C 1.0 0.61 0.57 0.55 0.53 0.51 0.49 0.47 0.45 TA = 150°C 10 0 1 2 3 4 5 6 7 75 50 25 0 8 0 25 50 75 100 125 150 VR, REVERSE VOLTAGE (V) TA, DERATED AMBIENT TEMPERATURE (°C) Figure 14. Capacitance Figure 15. Diode Power Dissipation Curve http://onsemi.com 5 175 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−74 CASE 318F ISSUE P 6 1 SCALE 2:1 DATE 07 OCT 2021 GENERIC MARKING DIAGRAM* XXX MG G XXX M G = Specific Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLE 1: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. ANODE 6. CATHODE STYLE 2: PIN 1. NO CONNECTION 2. COLLECTOR 3. EMITTER 4. NO CONNECTION 5. COLLECTOR 6. BASE STYLE 3: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 STYLE 4: PIN 1. COLLECTOR 2 2. EMITTER 1/EMITTER 2 3. COLLECTOR 1 4. EMITTER 3 5. BASE 1/BASE 2/COLLECTOR 3 6. BASE 3 STYLE 5: PIN 1. CHANNEL 1 2. ANODE 3. CHANNEL 2 4. CHANNEL 3 5. CATHODE 6. CHANNEL 4 STYLE 7: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 8: PIN 1. EMITTER 1 2. BASE 2 3. COLLECTOR 2 4. EMITTER 2 5. BASE 1 6. COLLECTOR 1 STYLE 9: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 10: PIN 1. ANODE/CATHODE 2. BASE 3. EMITTER 4. COLLECTOR 5. ANODE 6. CATHODE STYLE 11: PIN 1. EMITTER 2. BASE 3. ANODE/CATHODE 4. ANODE 5. CATHODE 6. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: 98ASB42973B SC−74 STYLE 6: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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