NSQA6V8AW5T2_09

NSQA6V8AW5T2 Series Transient Voltage Suppressor ESD Protection Diode with Low Clamping Voltage This integrated transient voltage suppressor device (TVS) is designed for applications requiring transient overvoltage protection. It is intended for use in sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its integrated design provides very effective and reliable protection for four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Features http://onsemi.com 1 2 3 4 5 • • • • • • • Low Clamping Voltage Small SC−88A SMT Package Stand Off Voltage: 5 V Low Leakage Current < 1 mA Four Separate Unidirectional Configurations for Protection ESD Protection: IEC61000−4−2: Level 4 MILSTD 883C − Method 3015−6: Class 3 Pb−Free Packages are Available Benefits • Provides Protection for ESD Industry Standards: IEC 61000, HBM • Minimize Power Consumption of the System • Minimize PCB Board Space Typical Applications SC−88A/SOT−323 CASE 419A MARKING DIAGRAM 4 5 6x MG G 1 x M G 2 3 • • • • • Instrumentation Equipment Serial and Parallel Ports Microprocessor Based Equipment Notebooks, Desktops, Servers Cellular and Portable Equipment Rating Peak Power Dissipation 8 20 msec Double Exponential Waveform (Note 1) Steady State Power − 1 Diode (Note 2) Thermal Resistance − Junction−to−Ambient Above 25°C, Derate Operating Junction Temperature Range Storage Temperature Range Lead Solder Temperature − Maximum 10 Seconds Duration IEC ^1000−4−2 (ESD) Contact Symbol PPK Value 20 Unit W MAXIMUM RATINGS (TA = 25°C unless otherwise noted) = H for NSQA6V8AW5T2 X for NSQA12VAW5T2 = Date Code = Pb−Free Package (Note: Microdot may be in either location) PD RqJA 380 mW ORDERING INFORMATION Device NSQA6V8AW5T2 NSQA6V8AW5T2G NSQA12VAW5T2 NSQA12VAW5T2G Package SC−88A Shipping† 3000/Tape & Reel TJ Tstg TL 327 3.05 −40 to +125 −55 to +150 260 $8.0 °C/W mW/°C °C °C °C kV SC−88A 3000/Tape & Reel (Pb−Free) SC−88A 3000/Tape & Reel SC−88A 3000/Tape & Reel (Pb−Free) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse per Figure 6. 2. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR4 board with min pad. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. See Application Note AND8308/D for further description of survivability specs. © Semiconductor Components Industries, LLC, 2009 September, 2009 − Rev. 5 1 Publication Order Number: NSQA6V8AW5T2/D NSQA6V8AW5T2 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF Ppk C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Capacitance @ VR = 0 and f = 1.0 MHz IPP VC VBR VRWM IR VF IT V IF I Uni−Directional *See Application Note AND8308/D for detailed explanations of datasheet parameters. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic NSQA6V8AW5T2 Breakdown Voltage (IT = 1 mA) (Note 3) Leakage Current (VRWM = 5.0 V) Clamping Voltage 1 (IPP = 1.6 A) (Note 4) Maximum Peak Pulse Current (Note 4) Junction Capacitance − (VR = 0 V, f = 1 MHz) − (VR = 3.0 V, f = 1 MHz) Clamping Voltage − Per IEC61000−4−2 NSQA12VAW5T2 Breakdown Voltage (IT = 5 mA) (Note 3) Leakage Current (VRWM = 9.0 V) Zener Impedence (IT = 5 mA) Clamping Voltage 1 (IPP = 0.9 A) (Note 4) Maximum Peak Pulse Current (Note 4) Junction Capacitance − (VR = 0 V, f = 1 MHz) Clamping Voltage − Per IEC61000−4−2 (Note 5) 3. VBR is measured at pulse test current IT. 4. Surge current waveform per Figure 5. 5. For test procedure see Figures 3 and 4 and Application Note AND8307/D. VBR IR ZZ VC IPP CJ VC 11.4 − − − − − 12.0 − − − − − Figures 1 and 2 12.7 0.05 30 23 0.9 15 V mA W V A pF V VBR IR VC IPP CJ VC 6.4 − − − − − 6.8 − − − 12 6.7 Figures 1 and 2 7.1 1.0 13 1.6 15 9.5 V mA V A pF V Symbol Min Typ Max Unit http://onsemi.com 2 NSQA6V8AW5T2 Series Figure 1. ESD Clamping Voltage Screenshot Positive 8 kV Contact per IEC61000−4−2 Figure 2. ESD Clamping Voltage Screenshot Negative 8 kV Contact per IEC61000−4−2 http://onsemi.com 3 NSQA6V8AW5T2 Series IEC 61000−4−2 Spec. Test Voltage (kV) 2 4 6 8 First Peak Current (A) 7.5 15 22.5 30 Current at 30 ns (A) 4 8 12 16 Current at 60 ns (A) 2 4 6 8 I @ 60 ns 10% tP = 0.7 ns to 1 ns I @ 30 ns IEC61000−4−2 Waveform Ipeak 100% 90% Level 1 2 3 4 Figure 3. IEC61000−4−2 Spec ESD Gun TVS Oscilloscope 50 W Cable 50 W Figure 4. Diagram of ESD Test Setup The following is taken from Application Note AND8308/D − Interpretation of Datasheet Parameters for ESD Devices. ESD Voltage Clamping For sensitive circuit elements it is important to limit the voltage that an IC will be exposed to during an ESD event to as low a voltage as possible. The ESD clamping voltage is the voltage drop across the ESD protection diode during an ESD event per the IEC61000−4−2 waveform. Since the IEC61000−4−2 was written as a pass/fail spec for larger 100 % OF PEAK PULSE CURRENT 90 80 70 60 50 40 30 20 10 0 0 20 tP tr systems such as cell phones or laptop computers it is not clearly defined in the spec how to specify a clamping voltage at the device level. ON Semiconductor has developed a way to examine the entire voltage waveform across the ESD protection diode over the time domain of an ESD pulse in the form of an oscilloscope screenshot, which can be found on the datasheets for all ESD protection diodes. For more information on how ON Semiconductor creates these screenshots and how to interpret them please refer to AND8307/D. PEAK VALUE IRSM @ 8 ms PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAY = 8 ms HALF VALUE IRSM/2 @ 20 ms Figure 5. 8 X 20 ms Pulse Waveform 40 t, TIME (ms) 60 80 http://onsemi.com 4 NSQA6V8AW5T2 Series 100 Ppk, PEAK SURGE POWER (W) % OF RATED POWER OR IPP 110 100 90 80 70 60 50 40 30 20 10 0 10 1 1 10 t, TIME (ms) 100 1000 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 6. Pulse Width Figure 7. Power Derating Curve 0.16 IR, REVERSE LEAKAGE (mA) 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 −60 −40 −20 0 20 40 60 80 100 14 12 TYPICAL CAPACITANCE (pF) 1 MHz FREQUENCY 10 8 6 4 2 0 0 1 2 3 4 5 6 6V TA = 25°C 12 V T, TEMPERATURE (°C) BIAS VOLTAGE (V) Figure 8. Reverse Leakage versus Temperature Figure 9. Capacitance 1 IF, FORWARD CURRENT (A) 0.1 0.01 0.001 TA = 25°C 0.6 0.8 1.0 1.2 1.4 1.6 1.8 VF, FORWARD VOLTAGE (V) Figure 10. Forward Voltage http://onsemi.com 5 NSQA6V8AW5T2 Series PACKAGE DIMENSIONS SC−88A/SOT−323/SC−70 5−LEAD PACKAGE CASE 419A−02 ISSUE J G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 A 5 4 S 1 2 3 −B− D 5 PL 0.2 (0.008) M B M N J C DIM A B C D G H J K N S H K SOLDERING FOOTPRINT* 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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