NSR0170P2T5G

Schottky Barrier Diode NSR0170P2 Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0170P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features • Very Low Forward Voltage Drop − 560 mV @ 10 mA Low Reverse Current − 25 nA @ 50 V VR 70 mA of Continuous Forward Current Power Dissipation of 240 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 2 pF NSVR Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection MARKING DIAGRAM 1 M 1 2 = Specific Device Code = Month Code ORDERING INFORMATION Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS MAXIMUM RATINGS Symbol Value Unit Reverse Voltage Rating VR 70 V Forward Current (DC) IF 70 mA ESD Rating: 2 ANODE 2 Q M Markets • • • • • 1 CATHODE SOD−923 CASE 514AB Typical Applications • • • • • 70 V SCHOTTKY BARRIER DIODE Q • • • • • • • Human Body Model Machine Model ESD Device Package Shipping† NSR0170P2T5G SOD−923 (Pb−Free) 2 mm Pitch 8000/Tape & Reel NSVR0170P2T5G SOD−923 (Pb−Free) 2 mm Pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 2 Class B Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2008 September, 2019 − Rev. 2 1 Publication Order Number: NSR0170P2/D NSR0170P2 THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Symbol Junction and Storage Temperature Range Min Typ Max Unit RqJA PD 520 240 °C/W mW RqJA PD 175 710 °C/W mW TJ, Tstg −55 to +150 °C Typ Max Unit 25 − 90 3.0 nA mA 0.34 0.56 0.65 0.39 0.64 0.73 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Reverse Leakage (VR = 50 V) (VR = 70 V) IR Forward Voltage (IF = 1.0 mA) (IF = 10 mA) (IF = 15 mA) VF Total Capacitance (VR = 0 V, f = 1 MHz) CT Ir, REVERSE CURRENT (mA) 100 150°C 10 125°C 1 85°C 0.1 25°C 0.01 −40°C 0 0.2 0.4 0.6 2.0 pF 0.8 1.0 1.2 1.4 125°C 1 85°C 0.1 25°C 0.01 0.001 −40°C 0.0001 0.00001 1.6 150°C 10 0 10 20 30 40 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 2.5 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) V 100 1000 0.001 Min TA = 25°C 2.0 1.5 1.0 0.5 0 0 10 20 30 40 50 60 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance www.onsemi.com 2 70 80 60 70 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOD−923 CASE 514AB−01 ISSUE B STYLE 1 DATE 07 MAR 2007 STYLE 2 SCALE 8:1 D −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. −Y− E 1 b 2 2X 0.08 (0.0032) X Y DIM A b c D E HE L A L c HE MILLIMETERS MIN NOM MAX 0.34 0.37 0.40 0.15 0.20 0.25 0.07 0.12 0.17 0.75 0.80 0.85 0.55 0.60 0.65 0.95 1.00 1.05 0.05 0.10 0.15 XM XM STYLE 1 STYLE 2 0.40 X M 0.30 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DESCRIPTION: 98AON23284D MAX 0.016 0.010 0.007 0.033 0.026 0.041 0.006 = Specific Device Code = Date Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE DOCUMENT NUMBER: INCHES NOM 0.015 0.008 0.005 0.031 0.024 0.039 0.004 GENERIC MARKING DIAGRAM* SOLDERING FOOTPRINT* 0.90 MIN 0.013 0.006 0.003 0.030 0.022 0.037 0.002 STYLE 2: NO POLARITY Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. SOD−923, 1.0X0.6X0.37, MAX HEIGHT 0.40 PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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