NSR0320MW2T1G

NSR0320MW2T1 Schottky Barrier Diodes These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance. Features • Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B − Machine Model: C http://onsemi.com • Pb−Free Packages are Available MAXIMUM RATINGS (TJ = 125°C unless otherwise noted) Rating Reverse Voltage Peak Revese Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Continuous Forward Current t = 8.3 ms Half Sinewave Junction Temperature Storage Temperature Range Symbol VR VRM PF 200 2.0 IF 1 IF 5 TJ Tstg 125 Max −55 to +150 °C °C A mW mW/°C A Value 20 23 Unit Vdc V HIGH CURRENT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE 2 MARKING DIAGRAM RD MG G M 1 SOD−323 CASE 477 STYLE 1 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. RD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NSR0320MW2T1 Package Shipping† SOD−323 3000/Tape & Reel NSR0320MW2T1G SOD−323 3000/Tape & Reel (Pb−Free) NSR0320MW2T3G SOD−323 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 October, 2005 − Rev. 1 Publication Order Number: NSR0320MW2T1/D NSR0320MW2T1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Total Capacitance (VR = 5.0 V, f = 1.0 MHz) Reverse Leakage (VR = 15 V) Reverse Leakage (VR = 2.0 V @ 85° C) Reverse Leakage (VR = 15.0 V @ 85° C) Forward Voltage (IF = 10 mAdc) Forward Voltage (IF = 100 mAdc) Forward Voltage (IF = 900 mAdc) Symbol CT IR IR IR VF VF VF Min − − − − − − − Typ 25 10 200 450 0.24 0.30 0.45 Max 29 50 300 1000 0.27 0.35 0.50 Unit pF mAdc mA mA Vdc Vdc Vdc 1000 IF, FORWARD CURRENT (mA) 10000 150°C IR, REVERSE CURRENT (mA) 1000 125°C 85°C 100 100 150°C 10 85°C −55°C 10 25°C 1 0 5 10 15 20 25 1 0.0 25°C 0.1 −45°C 0.2 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 140 120 CT, CAPACITANCE (pF) 100 80 60 40 20 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 3. Total Capacitance http://onsemi.com 2 NSR0320MW2T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 HE D b 1 2 E MIN 0.031 0.000 A3 A L NOTE 5 C NOTE 3 A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 SCALE 10:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 3 NSR0320MW2T1 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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