NSR0320MW2T1 Schottky Barrier Diodes
These Schottky barrier diodes are designed for high current, handling capability, and low forward voltage performance.
Features
• Low Forward Voltage − 0.24 Volts (Typ) @ IF = 10 mAdc • High Current Capability • ESD Rating − Human Body Model: CLASS 3B • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating Reverse Voltage Peak Revese Voltage Forward Power Dissipation @ TA = 25°C Derate above 25°C Forward Current (DC) Continuous Forward Current t = 8.3 ms Half Sinewave Junction Temperature Range Storage Temperature Range Symbol VR VRM PF Value 20 23 200 2.0 1 5 − 55 to +125 − 55 to +150 Unit Vdc V mW mW/°C A A °C °C 1
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− Machine Model: C
HIGH CURRENT SCHOTTKY BARRIER DIODE
1 CATHODE
2 ANODE
2
MARKING DIAGRAM
RD MG G
IF IF TJ Tstg
SOD−323 CASE 477 STYLE 1
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
RD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping†
NSR0320MW2T1G SOD−323 3000/Tape & Reel (Pb−Free) NSR0320MW2T3G SOD−323 10,000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 3
Publication Order Number: NSR0320MW2T1/D
NSR0320MW2T1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Total Capacitance (VR = 5.0 V, f = 1.0 MHz) Reverse Leakage (VR = 15 V) Reverse Leakage (VR = 2.0 V @ 85°C) Reverse Leakage (VR = 15.0 V @ 85°C) Forward Voltage (IF = 10 mA) Forward Voltage (IF = 100 mA) Forward Voltage (IF = 900 mA) Symbol CT IR IR IR VF VF VF Min − − − − − − − Typ 25 10 200 450 0.24 0.30 0.45 Max 29 50 300 1000 0.27 0.35 0.50 Unit pF mA mA mA V V V
1000 IF, FORWARD CURRENT (mA)
10000 150°C IR, REVERSE CURRENT (mA) 1000 125°C 85°C 100
100
150°C
10
85°C −55°C
10 25°C 1 0 5 10 15 20 25
1 0.0
25°C 0.1
−45°C 0.2 0.3
0.4
0.5
0.6
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
140 120 CT, CAPACITANCE (pF) 100 80 60 40 20 0 0 5 10 15 20
VR, REVERSE VOLTAGE (V)
Figure 3. Total Capacitance
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NSR0320MW2T1
PACKAGE DIMENSIONS
SOD−323 CASE 477−02 ISSUE H
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105
HE D
b
1
2
E
MIN 0.031 0.000
A3 A C L A1
NOTE 3
NOTE 5
SOLDERING FOOTPRINT*
0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112
SCALE 10:1
mm inches
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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PUBLICATION ORDERING INFORMATION
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