NSR0340HT1G

NSR0340HT1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340H in a SOD−323 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features http://onsemi.com • • • • • • • • • • • • • • • • • Very Low Forward Voltage Drop −415 mV @ 100 mA Low Reverse Current − 0.4 mA @ 25 V VR 250 mA of Continuous Forward Current Power Dissipation of 160 mW with Minimum Trace Very High Switching Speed Low Capacitance − CT = 6 pF This is a Pb−Free Device LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs and PDAs GPS 40 VOLT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE Typical Applications 2 1 SOD−323 CASE 477 STYLE 1 MARKING DIAGRAM AD MG G Markets AD = Specific Device Code M = Date Code G = Pb−Free Package (Note: Microdot may be in either location) MAXIMUM RATINGS Rating Reverse Voltage Forward Continuous Current (DC) Non−Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model Symbol VR IF IFSM ESD Value 40 250 1.0 Class 2 Class A Unit Vdc mA A ORDERING INFORMATION Device NSR0340HT1G Package SOD−323* (Pb−Free) Shipping† 3000/Tape & Reel *This package is inherently Pb−Free. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. © Semiconductor Components Industries, LLC, 2008 October, 2008 − Rev. 0 1 Publication Order Number: NSR0340H/D NSR0340HT1G THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Junction and Storage Temperature Range Symbol RqJA PD RqJA PD TJ, Tstg Max 740 160 460 270 −55 to +150 Unit °C/W mW °C/W mW °C 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) (VR = 25 V) (VR = 40 V) Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) Total Capacitance (VR = 10 V, f = 1 MHz) Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) Symbol IR Min Typ 0.2 0.4 1.3 320 415 470 6.0 5.0 Max 1.0 3.0 6.0 350 490 590 Unit mA VF mV CT pF ns trr DC Current − Source + 0.1 mF 0V tr tp 10% 750 mH 0.1 mF IF VR 90% Pulse Generator Output 50 W Output Pulse Generator IF DUT trr Adjust for IRM RL = 50 W Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. IRM iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time