NSR0340P2T5G

NSR0340P2 40 V Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0340P2 in a SOD−923 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. www.onsemi.com Features • • • • • • • 40 V SCHOTTKY BARRIER DIODE Very Low Forward Voltage Drop − 420 mV @ 100 mA Low Reverse Current − 0.6 mA @ 10 V Continuous Forward Current − 200 mA Power Dissipation with Minimum Trace − 190 mW Very High Switching Speed − 3.0 ns @ 10 mA Low Capacitance − 4 pF @ 5.0 V This is a Pb−Free Device 1 CATHODE 2 ANODE MARKING DIAGRAM Typical Applications 2 LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection 1 SOD−923 CASE 514AB R M Markets • • • • • Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS Rating Forward Current (DC) Symbol Value Unit VR 40 V IF 200 mA Non−Repetitive Peak Forward Surge Current IFSM 1.0 A ESD Rating: ESD Human Body Model Machine Model M 1 2 = Specific Device Code = Month Code ORDERING INFORMATION MAXIMUM RATINGS Reverse Voltage R • • • • • Device Package Shipping† NSR0340P2T5G SOD−923 (Pb−Free) 2 mm Pitch 8000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Class 2 Class A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2008 March, 2017 − Rev. 1 1 Publication Order Number: NSR0340P2/D NSR0340P2 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Characteristic RqJA PD 520 190 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 175 570 °C/W mW TJ, Tstg −55 to +125 °C Junction and Storage Temperature Range 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Reverse Leakage (VR = 10 V) (VR = 40 V) IR Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 200 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) trr Min Typ Max 0.6 4.0 5.0 20 290 420 520 320 460 560 Unit mA mV pF 4.0 ns 3.0 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. DC Current Source + − tr 0.1 mF tp 0V 10% 750 mH 50 W Output Pulse Generator IF 90% VR 0.1 mF Pulse Generator Output IF DUT Adjust for IRM trr RL = 50 W Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) 50 W Input Oscilloscope 1. 2. 3. 4. 5. iR(REC) = 1 mA IRM Current Transformer DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time