NSR0520V2T1G

NSR0520V2T1G Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc−dc converter, clamping and protection applications in portable devices. NSR0520V2 in a SOD−523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. Features http://onsemi.com • • • • • • • • • • • • • • • • • Very Low Forward Voltage Drop − 325 mV @ 100 mA Low Reverse Current − 8.0 mA @ 10 V Continuous Forward Current − 500 mA Power Dissipation with Minimum Trace − 170 mW Very High Switching Speed − 12 ns @ 10 mA Low Capacitance − 35 pF @ 1.0 V This is a Pb−Free Device LCD and Keypad Backlighting Camera Photo Flash Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping and Protection Mobile Handsets MP3 Players Digital Camera and Camcorders Notebook PCs & PDAs GPS 20 VOLT SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE Typical Applications 1 2 SOD−523 CASE 502 PLASTIC Markets MARKING DIAGRAM AA M G G 1 2 AA = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) Symbol VR IF IFSM ESD Value 20 500 2.0 Class 3B Class C Unit Vdc mA A *Date Code orientation position may vary depending upon manufacturing location. MAXIMUM RATINGS Rating Reverse Voltage Forward Continuous Current (DC) Non−Repetitive Peak Forward Surge Current ESD Rating: Human Body Model Machine Model ORDERING INFORMATION Device NSR0520V2T1G Package SOD−523* (Pb−Free) Shipping† 3000/Tape & Reel Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *This package is inherently Pb−Free. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2008 July, 2008 − Rev. 1 1 Publication Order Number: NSR0520V2T1/D NSR0520V2T1G THERMAL CHARACTERISTICS Characteristic Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Junction and Storage Temperature Range Symbol RqJA PD RqJA PD TJ, Tstg Max 600 170 300 340 −55 to +125 Unit °C/W mW °C/W mW °C 1. Mounted onto a 4 in square FR−4 board 10 mm sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. 2. Mounted onto a 4 in square FR−4 board 1 in sq. 1 oz. Cu 0.06” thick single−sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Leakage (VR = 10 V) (VR = 20 V) Forward Voltage (IF = 10 mA) (IF = 100 mA) (IF = 500 mA) Total Capacitance (VR = 1.0 V, f = 1 MHz) Reverse Recovery Time (IF = IR = 10 mA, IR = 1.0 mA) Symbol IR Min Typ 8.0 75 255 325 410 35 12.0 Max 30 Unit mA VF 320 390 480 mV CT pF ns trr DC Current Source + − 0.1 mF 0V tr tp 10% 750 mH 0.1 mF IF VR 90% 50 W Output Pulse Generator Pulse Generator Output IF DUT trr Adjust for IRM RL = 50 W Current Transformer 50 W Input Oscilloscope 1. 2. 3. 4. 5. IRM iR(REC) = 1 mA Output Pulse (IF = IRM = 10 mA; measured at iR(REC) = 1 mA) DC Current Source is adjusted for a Forward Current (IF) of 10 mA. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current IRM of 10 mA. Pulse Generator transition time