NSR05301MX4T5G

Trench-based Schottky Diode, 500 mA, 30 V NSR05301MX4 These Schottky diodes are optimized for low forward voltage drop and low leakage current that offers the most optimal power dissipation in applications. They are housed in space saving micro−packaging ideal for space constrained applications. www.onsemi.com Features • • • • • • Smallest Package Available (01005); 0.445mm x 0.24mm 500 mA of Continuous Forward Current Low Forward Voltage Drop − 430 mV (Typical) @ IF = 200 mA Low Reverse Current − 25 mA (Typical) @ VR = 30 V Low Reverse Recovery Time − 9 ns Typical Low Capacitance − 19 pF Typical 1 CATHODE MARKING DIAGRAM X4DFN2 CASE 718AA Typical Applications • • • • • Mobile and Wearable Devices LED Boost Converters Buck and Boost dc−dc Converters Reverse Voltage and Current Protection Clamping & Protection ORDERING INFORMATION Symbol Value Unit Forward Current (DC) IF 500 mA Reverse Voltage VR 30 V Repetitive Peak Forward Current (Pulse Wave = 1 sec, Duty Cycle = 66%) IFRM 1.0 A ESD Rating: ESD >8.0 >400 kV V Human Body Model Machine Model DM D = Specific Device Code M = Date Code MAXIMUM RATINGS Rating 2 ANODE Device Package Shipping† NSR05301MX4T5G X4DFN2 (Pb−Free) 10000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. © Semiconductor Components Industries, LLC, 2017 October, 2020 − Rev. 1 1 Publication Order Number: NSR05301/D NSR05301MX4 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C RqJA PD 614.9 203 °C/W mW Thermal Resistance Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C RqJA PD 239.4 522 °C/W mW Junction Temperature Range TJ −55 to +125 °C Storage Temperature Range TSTG −55 to +150 °C TL 260 °C Lead Solder Temperature − Maximum (10 seconds) 1. Mounted onto a 4 2. Mounted onto a 4 R(t), TRANSIENT THERMAL RESPONSE (°C/W) 1000 100 10 in2 in2 FR−4 board FR−4 board 10 mm2 1 oz. Cu 0.06’ thick single−sided. Operating to steady state. 2 cm2 1 oz. Cu 0.06’ thick single−sided. Operating to steady state. D = 0.5 0.2 0.1 0.05 0.02 0.01 1 0.1 Single Pulse 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 t, PULSE TIME (s) 0.1 1 10 100 1000 1 10 100 1000 Figure 1. Thermal Response (Note 1) R(t), TRANSIENT THERMAL RESPONSE (°C/W) 1000 100 10 D = 0.5 0.2 0.1 0.05 0.02 0.01 1 0.1 Single Pulse 0.01 0.00000001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 t, PULSE TIME (s) Figure 2. Thermal Response (Note 2) www.onsemi.com 2 NSR05301MX4 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max 15 25 50 100 355 430 640 480 540 800 Reverse Leakage (VR = 10 V) (VR = 30 V) IR Forward Voltage (IF = 100 mA) (IF = 200 mA) (IF = 500 mA) VF Total Capacitance (VR = 5.0 V, f = 1 MHz) CT 19 Reverse Recovery Time (IF = IR = 10 mA, IR(REC) = 1.0 mA) trr 9.0 Unit mA mV pF 11 ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 1E−02 IR, REVERSE CURRENT (A) 85°C 100 25°C 0°C 10 1 0.0 125°C 125°C −55°C 0.1 0.2 0.3 0.4 0.6 0.5 1E−03 25°C 1E−05 0°C 1E−06 1E−07 −55°C 1E−08 1E−09 0.7 85°C 1E−04 0 2 4 8 10 12 14 16 18 20 22 24 26 28 30 6 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 3. Forward Voltage Figure 4. Leakage Current 50 CT, TOTAL CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 500 TA = 25°C f = 1 MHz 45 40 35 30 25 20 15 10 5 0 0 5 10 15 20 VR, REVERSE VOLTAGE (V) Figure 5. Total Capacitance www.onsemi.com 3 25 30 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS X4DFN2, 0.445x0.24, 0.27P CASE 718AA ISSUE A DATE 21 MAR 2017 SCALE 10:1 A B D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. EXPOSED COPPER ALLOWED AS SHOWN. Ç PIN 1 REFERENCE DIM A A1 b D E e L E TOP VIEW A 0.03 C 0.03 C A1 SIDE VIEW C GENERIC MARKING DIAGRAMS* SEATING PLANE X e e/2 2 2X 0.10 C A B L X b PIN 1 2X MILLIMETERS MIN NOM MAX 0.15 0.18 0.21 −−− −−− 0.03 0.170 0.185 0.200 0.415 0.445 0.475 0.210 0.240 0.270 0.270 BSC 0.105 0.120 0.135 0.05 C NOTE 3 BOTTOM VIEW X = Specific Device Code *This information is generic. Please refer to device data sheet for actual part marking. Some products may not follow the Generic Marking. RECOMMENDED MOUNTING FOOTPRINT* 0.27 PITCH 2X 0.21 1 2X 0.13 DIMENSIONS: MILLIMETERS See Application Note AND8398/D for more mounting details *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON29067G X4DFN2, 0.445X0.24, 0.27P Electronic versions are uncontrolled except when accessed directly from the Document Repository. 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